BB22 Search Results

BB221

Contextual Info: BB221 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.0p C1/C2 Min. Capacitance Ratio8.0 V(RRM)(V) Rep.Pk.Rev. Voltage32 Q Factor Min. f(co) Min. (Hz) Cut-off freq.24G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT

BB521

Abstract: BB529 pin diode do35 BB510 BB221 8A683 BB*329 A BB222 BB531 BB404A
Contextual Info: *4684955 I T T SEMICONDUCTORS 87 D 0 2 3 2 8 SOLID STATE TUNER COMPONENTS ~fl7 DE | LILACS D y C 0 7 -/ 0 DDE3 5 f l fl | T-on-is Variable-Capacitance Tuner Diodes delivered in matched sets Type BB221 BB222 BB329 BB404A* BB404B BB404C BB404D BB404E BB510

bb221

Abstract: BB222 BA222 BA221 B8222
Contextual Info: BB221, BB222 Tuner Diodes Silicon Epitaxial Planar Capacitance Diodes with very wide effective capacitance variation for tuning the whole range of VHF or UHF television bands. max. 1.90 These diodes are available as singles or as matched sets of two or more units according to the tracking condition described

BA222

Abstract: BB221 BB222 BA221
Contextual Info: BB221, BB222 TUNER DIODES Silicon Epitaxial Planar Capacitance Diodes with very wide effective capacitance variation for tuning the whole range of VHF or UHF television bands. These diodes are available as singles or as matched sets of two or more units according to the tracking condition

Contextual Info: BB222 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.1p C1/C2 Min. Capacitance Ratio7.3 V(RRM)(V) Rep.Pk.Rev. Voltage32 Q Factor Min. f(co) Min. (Hz) Cut-off freq.16G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT

BB229

Contextual Info: BB229 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.21p C1/C2 Min. Capacitance Ratio6.8 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.9.0G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT

AH40

Abstract: AW33 AA41 BC35 EPF8050M
Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device

Contextual Info: in te i 0 M F [ i3 [m Y 0 N 80960CF-33, -25,-16 32-BIT HIGH PERFORMANCE SUPERSCALAR PROCESSOR • S o c k e t and O b jec t C o d e C o m p atib le w ith 8 0 96 0C A • T w o In s tru c tio n s /C lo c k S u stain ed E xecu tion • F ou r 59 M b y te s /s D M A C h an n els w ith D ata Chaining

T9550

Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41
Contextual Info: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004

transistor bl p89

Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
Contextual Info: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet

Contextual Info: _ 10 LOOSE CONTINUOUS LOOSE PIECE STRIP PIECE MATERIAL ENGRNG MATERIAL NUMBER NUMBER NUMBER 90 0 3 0 0 7 M-22 2 900 3 0 06 90030064 M-22 I0 900 3 0 03 90030068 M-22 900 3 0 04 9003000 AA-220 900 3 0 05 9 0 0 3 0 0 3 6 AA-22 3 900 3 0 09 9 0 0 3 0 0 3 8 AA-22 4

Contextual Info: 10 9 L O O S E P IE C E M A T E R IA L E N G IN E E R IN G 8 M ETAL S T R IP M A T E R IA L C A R R IE D 7 M YLAR E N G IN E E R IN G TAPE M A T E R IA L NUM BER NUM BER NUM BER NUM BER NUM BER 190070001 AA-2220 AA-2220X 190070008 190070007 AA-2220Z AA-2220XZ

Contextual Info: 10 MATERIAL * MATERIAL * LOOSE PCS CONTINUOUS 190030008 190030009 NOTE 5 NOTE 5 NOTE 5 NOTE 5 190030014 190030015 190030021 190030022 190030027 190030028 190030034 190030033 190030047 190030048 NOTE 5 NOTE 5 NOTE 5 NOTE 5 190030054 190030053 190030059 190030060

Contextual Info: I DRWG. NO. ±.015 196 CUST. DRWG. . 'T _ ' i— f i — i - i i l l ' i 1 , i r ( ' / 1 L -4 - MWID c 1-015 PART B NO. AWG COLOR MWID TAB S IZ E L G E C AA-2222 22- 18 RED . 17 6/4.47 . I8 7 X .0 2 0 . 6 3 0 / 16.00 . 5 8 5 / 14.86 .5 1 2 /1 3 .0 0

XAPP031

Contextual Info: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

Contextual Info: XILIU001 £ XILINX XC4000 Series Table of Contents XC4000E and XC4000X Series Field Programmable Gate Arrays XC4000E and XC4000X Series Features. 3 Low-Voltage Versions A vailable. 3

Contextual Info: Pin Information for the Stratix V 5SGXB6 Device Version 1.1 Note 1 Bank Number GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L5 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4 GXB_L4

Contextual Info: Pin Information for the Stratix V 5SGXA5 Device Version 1.2 Note 1 Bank Number GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1 GXB_L1

BB529

Abstract: BB521 BB531 pin diode do35 ITT BB221 b8221 1N6263 BB221 BB521 itt LL103A
Contextual Info: SCHOTTKY DIODES Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times. Using the type designations L.L101A, LL103A, and so on, these Schottky Barrier diodes are available in the MiniMELF package with the

CQ12B

Abstract: EP4SE530 DIODE BA40 f1517 H1152 DQS30B AL-36 ag33 diode diode ak38 AL34
Contextual Info: Pin Information for the Stratix IV E EP4SE530 Device Version 1.1 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1B 1B 1B 1B

diode ak38

Abstract: F1517 AK39 s av36 aw7 diode
Contextual Info: Pin Information for the Stratix IV GT EP4S100G5ES1 Device Version 1.2 Notes 1 , (2), (3), (4) WARNING: For ES1 silicon only Bank Number VREF 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A

Contextual Info: This document was generated on 04/27/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 19003-0053 Active Description: InsulKrimp Female Quick Disconnect, for 14-16 AWG Wire Documents: Drawing PDF Product Specification PS-19902-008 (PDF)

Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary

pt45

Contextual Info: LatticeSC Family Data Sheet DS1004 Version 01.2, June 2006 LatticeSC Family Data Sheet Introduction June 2006 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os • 700MHz global clock; 1GHz edge clocks