BB53C Search Results

Contextual Info: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

ECG116

Abstract: tv schematic diagram PHILIPS
Contextual Info: i PHILIPS E C G INC 17E ECG Semiconductors bb53ci20 ODOSHTb 1 ECG 1378 T —7 4 —0 5 —01 10 W AF Power Amplifier The ECG1378 is a monolithic integrated cir­ cuit intended for use as a low frequency class "AB" amplifier with 10% distortion at Vcc = ±12 V. It provides 12 W output power

Contextual Info: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan

2N2222A 331

Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Contextual Info: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.

Contextual Info: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.

Contextual Info: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.

BUZ24

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

74LVC573D

Abstract: IX-33 74LVC573 74LVC573DB
Contextual Info: NAPC/PHILIPS SEIHCOND b3E D • bb53c]2i4 0003^33 S^E « S I C 3 Philips Semiconductors Objective Specification 74LVC573 Octal D-type transparent latch; 3-state QUICK REFERENCE DATA GND = 0 V; TOTb = 25 °C; t, = t, < 2.5 ns FEATURES • • • • • •

APC UPS CIRCUIT DIAGRAM

Abstract: APC be 500 UPS CIRCUIT DIAGRAM ECG9924 APC UPS CIRCUIT BOARD UPS APC rs 500 CIRCUIT diagram APC UPS CIRCUIT DIAGRAM 500 UPS APC CIRCUIT diagram UPS APC CIRCUIT Internal circuit diagram of apc ups apc ups diagram
Contextual Info: PHILIPS E C G INC ECG ECG992 4 Independent Operational Amplifiers S e m ic o n d u c to rs Features • Wide single supply voltage range or dual supplies 4Vq bb53c12fl 000455b =1 • 17E 0 c t 0 36 V I4 13 12 II 10 9 e — r . 2 8 0 "< 7 .ll> MAX. I d c ± 2 V D C t0 ±18VdC

910U

Contextual Info: 17E □ PHILIPS E C G INC • bb53ci2û 0Q04QÔ5 ECG1121 TV COLOR SYNC. CIRCUIT semiconductors F U N C T IO N S • 3.58M H z O se. • P h a se D et. • K ille r D et. • K ille r Amp. • B u r s t G a te P u lse • T in t C ontrol PIN A R R A N G E M E N T

Contextual Info: • bb53ci31 D025flfl7 342 HAPX N APIER PHILIPS/DISCRETE PMBTA05 PMBTA06 b?E I> J V SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.

BFG540

Abstract: transistor N43
Contextual Info: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency

PBYR12045TV

Contextual Info: DEVELOPMENT DATA Q bb53cm 2SE This data sheet contains advance information and specifications are subject to change w ithout notice. 00221*13 3 El PBYR12035TV PBYR12040TV PBYR12045TV D N AMER PHILIPS/DISCRETE T O Z -2J SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

74LV373

Abstract: 74LV373D 74LV373DB 74LV373N
Contextual Info: NAPC/PHILIPS SENICON] b3E J> Philips Semiconductors WM bb53c124 00fl3fl0b b63 m S I Q 3 Product Specification Octal D-type transparent latch; 3-state QUICK REFERENCE DATA GND = 0 V; T ^ = 25 °C; t, = t, < 2.5 ns FEATURES • • • • • • • 74LV373

Contextual Info: N A PIER PHILIPS/DISCRETE b^E » • b b S B ' m D030E11 4b7 « A P X J V BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 S2 load.

BTY79-400R

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to

bry39

Abstract: BRY39 circuit
Contextual Info: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: N AMER PHILIPS/DISCRETE febMTJl 0Q26566 206 b^E D IAPX BUX86 BUX87 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-126 envelopes, fo r use in con­ verters, inverters, switching regulators, m otor control systems and switching applications.

BY711

Abstract: BY710 MAX1719
Contextual Info: N AMER PHIL IP S/DISCRET E b'ìE D • bbSBTBl OOSbSSM 3D3 H A P X BY710 BY711 A SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.

MSA685

Abstract: IEC134 TDF8704 TDF8704T
Contextual Info: NAPC/PHILIPS SEMICOND fc,3E D • £^53^24 QD7ä731 SQb « S I C 3 Philips Semiconductor» Video Products_ Preliminary specification 8-bit high-speed analog-to-digita converter TDF8704 FEA T U R E S APPLICATIO NS • 8-bit resolution