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BB53I31 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BYQ28 Contextual Info: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward	OCR Scan	BYQ28 operati1-03-17 bbS3T31 0DEEM03 D0EE404	PDF
BUZ84 Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h Contextual Info: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	BUZ84 Q0147QE T-39-13 BIXZ84 BUZ84 t03 package transistor pin dimensions BU184 TRANSISTOR 13-h	PDF
RTC11175Y Abstract: MRB11175Y Contextual Info: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,	OCR Scan	MRB11175Y FO-67 T-33-/LS 7Z21013 7294SÃ RTC11175Y MRB11175Y	PDF
transistor BS170 Abstract: max 1987 BS170 kbl transistor Contextual Info: BS170 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low RDSon• Direct interface to C-MOS, T T L , etc.	OCR Scan	BS170 7Z88773 transistor BS170 max 1987 BS170 kbl transistor	PDF
BUZ84 Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma Contextual Info: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total pwer dissipation tot Drain-source on-state resistance	OCR Scan	BUZ84 ttS3131 T-39-13 Q0147QE t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma	PDF
CNR50 Abstract: optocoupler ic BS415 BS7002 TDA8385 Contextual Info: Product specification P hilips Sem iconductor» Dedicated IC-optocoupter CNR50 FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum	OCR Scan	CNR50 CNR50 bb53T31 003532b optocoupler ic BS415 BS7002 TDA8385	PDF
BUZ94 Contextual Info: PowerMOS transistor_ BUZ94_ N AMER PHILIPS/DISCRETE QtE D • L 3S3T31 0014b75 4 ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	BUZ94_ 3S3T31 0014b75 BUZ94 T-39-13 bb53T31 0014bfll BUZ94	PDF
Contextual Info: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery	OCR Scan	BUK627-450B b53T31	PDF
GRM Series 103 Abstract: BTS59-850R M2279 M1439 LT 907 S BTS59-1200R DT2000 BTS59-1200 BTS59 IEC134 Contextual Info: N AMER P H I L I P S / DISCRETE ObE D • ^53^31 OD11ÖÖ1 3 ■ II BTS59 SERIES A T" _ I S ’- 1 S ' FAST GATE TURN-OFF THYRISTORS rSrrSEr-r"-'-QUICK REFERENCE DATA Repetitive peak off-state voltage Non-repetitive peak on-state current	OCR Scan	bS3T31 BTS59 OT-93; BTS59-850R 1000R 1200R M2282 GRM Series 103 M2279 M1439 LT 907 S BTS59-1200R DT2000 BTS59-1200 IEC134	PDF