BBS3I31 Search Results

Contextual Info: l-1_ N AMER PHILIPS/DISCRETE OLE D bbS3i31 D O i m i T I Ofl68 y l T - a s ' - i sr THYRISTORS The OT168 devices are glass-passivated thyristors featuring sensitive gate triggering as low as 200 pA. Applications include temperature control, motor control, regulators in transformerless power supply

Contextual Info: N AilER PHILIPS/DISCRETE SSE D bbS3i31 0020b35 □ • PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BGY57

Abstract: BGY56 6-32UNC-2A
Contextual Info: • bbS3i31 00105^5 3 ■ N AMER PHILIPS/DISCRETE BGY56 BGY57 2SE D T -i^ -o ^ -o y HYBRID V.H.F. PUSH-PULL AMPLIFIER MODULES Hybrid amplifier modules intended for CATV systems. Q UICK REFERENCE DATA Source impedance and load impedance to N -J N Frequency range

philips OF432

Abstract: of432 BY224 BY224-400 J90D 56379
Contextual Info: I N AMER P H I L I P S / D I S C R E T E TDD bbS3i31 D JC MAINTENANCE TYPES 90D D 10140 DDlOma □ BY224 SERIES T - 3 l3 - o £ SILICON BRIDGE RECTIFIERS Ready-for-use mains full-wave bridges, each consisting of four double-diffused silicon diodes, in a plastic encapsulation. The bridges are intended for use in equipment supplied from mains w ith r.m.s.

Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

Contextual Info: N A PIER PHILIPS/DISCRETE OLE D 1,^53=131 DQ110E3 1 BR220 SERIES r - 3 5 " - OS- DUAL BREAKOVER DIODES The BR220 is a range of monolithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the TO-220AB outline, available in a + /— 12% tolerance series of nominal breakover voltage.

transistor k 3728

Abstract: BLY90 A-04 TRIMMER capacitor 160 pF 270j capacitor SOT-55 philips Trimmer 60 pf
Contextual Info: — - ; — 5 - : _ N AMER P H IL IP S /D IS C R E T E 86D 0 1 92 8 . . — _ l i _ _ OLE I D •

BLY93A

Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Contextual Info: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

BF990AR

Contextual Info: • t.bS3T31 0G24737 TU' B A P X BF990AR b7E T> N AMER PHILIPS/DISCRETE SILICON N-CHANNEL DUAL GATE MOS-FET D epletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143R m ic ro m in ia tu re envelope w ith source and substrate interconnected, intended fo r U HF a p p lications, such as U H F television tuners and

transistor cq 449

Abstract: BLV62 MRA322 MBA970 8w RF POWER TRANSISTOR NPN C1663 MAPX
Contextual Info: N AUER PH ILI PS/DISCRETE bT E Philips Semiconductors_ ]> • bbSBTBl GDETGBB QQ1 H A P X _Product specification UHF linear push-pull power transistor FEATURES MODE OF OPERATION c.w. class-AB f MHz 860 • Gold metallization ensures

BUS23

Abstract: t-33-15 BISCR BUS23B BUS23C
Contextual Info: [[ N AMER P H I L I P S / D I S C R E T E asE D bbSB'IBl C 018751 3 • J BUS23 SERIES s. -r-2 3 -1 6 * SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: r'r N AMER PHILIPS/DISCRETE -t- bbS3T31 0017404 T •' ESE D 2N2221A T- 3s - n SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope with the collector connected to the case. They are primarily intended for high speed switching. QUICK REFERENCE DATA

M3335

Abstract: DIODE 158 BYP20 M3331 M3332 BYH2
Contextual Info: N AMER PHI LIPS/DISCRETE ~ \ [ bbS3131 GG22357 fi • BYKklU ¡SERIES 2 SE D ■nos-17 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse

diode BYX25 600

Abstract: BYX25-600 RECTIFIER DIODES PHILIPS BYX25 BYX25-600R BYX25/600 BYX25 BYX25-1400 BYX25-1400R IEC134 diodes BYX25
Contextual Info: N AMER P H I L I P S / D I S C R E T E BYX25 SERIES ^1,53=131 00227=11 2 • 25E D 7 ^o m 9 CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended fo r power rectifier applications. The series consists of the following types: