BC 209 B Search Results

BC208

Abstract: BC207 transistor bc 207 npn bc 207 npn BC209 BC-208-2 BC208 transistor bc 209 BC 230 BC209 transistor
Contextual Info: BC 207 BC 208 BC 209 SILICON PLANAR NPN GENERAL PURPOSE AUDIO AMPLIFIERS The BC207, BC 208 and BC 209 are silico n planar epitaxial NPN transistors in T O -18 epoxy package. They are intended fo r use in d rive r o r input stages of audio am plifier and in signal processing circu its o f TV receivers.

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

Contextual Info: Preliminary GS816272CC-333/300/250/200/150 209-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs Features Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user

Contextual Info: 3SE D • äS3b320 QQlbbBl 3 « S I P PNP Silicon AF Transistors f - 4 1 - 17 SIEMENS/ SPCLi SEMICONDS • • • • • B a a a BC 856 -BC860 For AF input stages and driver applications High current gain Low collector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

GS832218

Contextual Info: Product Preview GS832218 B/C /GS832236(B/C)/GS832272(C) 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 119- and 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

bc 212 equivalent

Abstract: siemens CIB
Contextual Info: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 846, BC 847, BC 849, BC 850 NPN

Contextual Info: GS832218/36/72 B/E/C -xxxV 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the

cd 14015

Contextual Info: GS832218/36/72 B/E/C -xxxV 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the

GS8324Z18B

Contextual Info: Preliminary GS8324Z18 B/C /GS8324Z36(B/C)/GS8324Z72(C) 2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs 119- and 209-Pin BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS864218GB-167I

Contextual Info: GS864218 B /GS864236(B)/GS864272(C) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 119- & 209-Pin BGA Commercial Temp Industrial Temp Features 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

GS816272C

Abstract: GS816272CC GS816272CC-150 GS816272CC-200 GS816272CC-250 GS816272CC-300 GS816272CC-333
Contextual Info: Preliminary GS816272CC-333/300/250/200/150 209-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs Features Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user

GS8162V72C

Abstract: GS8162V72CC GS8162V72CC-250 GS8162V72CC-300 GS8162V72CC-333
Contextual Info: Preliminary GS8162V72CC-333/300/250/200/150 209-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 1.8 V VDD 1.8 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs Features Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user

74374

Abstract: 74574 74575 74534 74364
Contextual Info: - 209- Octal 3-State D-FFs 74364 to A CO CLOCK W - r%T t ì - fe? y 1*4“M & fTfi S r1 S o 74374 coiti / J Í Í £ * B l TH i í's< i t z f - t - r - xffl r1 n r . *í£l± m o s ¥ « - í > í ’- 7 í « B V cc thtl t" > i g 74364 jE R* 74374 JE B Ä

capacitor bc series

Abstract: 4500uf electrolytic capacitor date code capacitor electrolytic BC capacitor specification
Contextual Info: HITACHI AIC ALUMINUM ELECTROLYTIC CAPACITOR SPECIFICATION FXR2G452E11T Product Code: PPS Cap UL94V0 Vent Isolation Sleeve Screw Terminal Seating Ring MARKING I. P B A D T +/- 1 D2 II.) L Dimensions: Diameter : Length Terminal; Pitch Terminal length Mounting for bottom cooling

U9AN

Contextual Info: Product Preview GS832418A B/C /GS832436A(B/C)/GS832472A(C) 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 119- and 209-Pin BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable (x36 and x72)

Contextual Info: Preliminary GS832218 B/E /GS832236(B/E)/GS832272(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

MCL 105

Contextual Info: Preliminary GS832218/36/72 B/E/C -xxxV 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the

GS8322V18

Abstract: GS8322V18B-200 GS8322V18B-225 GS8322V18B-250 GS8322V72
Contextual Info: Preliminary GS8322V18 B/E /GS8322V36(B/E)/GS8322V72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O either linear or interleave order with the Linear Burst Order (LBO)

GS816273C

Abstract: GS816273CC GS816273CC-250 GS816273CC-300 GS816273CC-333
Contextual Info: Preliminary GS816273CC-333/300/250 333 MHz–250 MHz 3.3 V or 2.5 V VDD 3.3 V or 2.5 V I/O 256K x 72 18Mb S/DCD Sync Burst SRAMs 209-Bump BGA Commercial Temp Industrial Temp Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan

Contextual Info: GS832218 B/E /GS832236(B/E)/GS832272(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

Contextual Info: Product Preview GS864218 B /GS864236(B)/GS864272(C) 4M x 18, 2M x 36, 1M x 72 36Mb S/DCD Sync Burst SRAMs 119- & 209-Pin BGA Commercial Temp Industrial Temp Features 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

Contextual Info: Product Preview GS864218 B /GS864236(B)/GS864272(C) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 119- & 209-Pin BGA Commercial Temp Industrial Temp Features 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O either linear or interleave order with the Linear Burst Order (LBO)

Contextual Info: Product Preview GS8642V18 B /GS8642V36(B)/GS8642V72(C) 4M x 18, 2M x 36, 1M x 72 36Mb S/DCD Sync Burst SRAMs 119- & 209-Pin BGA Commercial Temp Industrial Temp Features 300 MHz–167 MHz 1.8 V VDD 1.8 V I/O either linear or interleave order with the Linear Burst Order (LBO)