BC 338 Search Results

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

C 337-40

Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
Contextual Info: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328

c 337 25

Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
Contextual Info: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338

transistors BC 327

Abstract: BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40
Contextual Info: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4

c33725

Abstract: c33740 Bc337
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1

TRANSISTOR 237b

Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
Contextual Info: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5

transistors BC 487

Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

capacitor BC 138 axial

Abstract: bc 20229 87478 Solid Aluminium SAL cecc 16101 014 24 01 02 80688 BC 109 Transistor Capacitor aluminium military data sheet Passive BC Components transistor Bc 640
Contextual Info: BC COMPONENTS DATA SHEET 123 SAL-A Aluminium electrolytic capacitors Solid Al, Axial Product specification Supersedes data of January 1998 File under BC Components, BC01 1999 Apr 26 BC Components Product specification Aluminium electrolytic capacitors Solid Al, Axial

bc 20229

Abstract: capacitor BC 138 axial capacitor electrolytic BC "BC Components" axial esr electrolytic capacitor hf16 IEC 60384-4-2 BC 037 capacitor capacitor BC 021 axial BC 2222 138
Contextual Info: BC COMPONENTS 123 SAL-A ^ Aluminium electrolytic capacitors Solid Al, Axial Product specification S upersedes data of January 1998 File under BC C om ponents, BC01 1999 A p r 26 COMPONENTS BC Components Product specification Aluminium electrolytic capacitors

2N6218

Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39

2n6218

Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533
Contextual Info: SE MIC ONDUCT ORS INC CHE D | fll3bbSG Q00D303 fi | T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18

C 337-25

Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
Contextual Info: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0

BC183A

Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
Contextual Info: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B

BU-65539M2-300

Abstract: RTL 8192 BU-65539 LA16 scheme bc plus ii mil-std1553b test
Contextual Info: Make sure the next Card you purchase has. BU-65539 MIL-STD-1553 BC/RT/MT INTERFACE CARD FEATURES • Half-Size IBM PC/AT ISA Compatible 16-Bit Interface Card • 1553B Notice 2 Dual Redundant BC\RT\MT STANAG 3838 Compliant • 64K x 16 Shared RAM • Programmable BC Gap Times

OF IC 337

Abstract: c 337 25 cbc338 CBC337 NPN 337 transistor BC 338 BC 337 npn bc 337 12 v transistors 337 basisstrom
Contextual Info: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

NPN 337

Contextual Info: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

transistor bc 138

Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
Contextual Info: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,

c 337 25

Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt