BC 345 Search Results

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

capacitor K681

Abstract: BC NPO K471
Contextual Info: BC COMPONENTS ern syiiT Mono-kap series Leaded ceramic multilayer capacitors Product specification Supersedes data of November 1997 File under BC Components, BC06 1999 Apr 15 COMPONENTS BC Components Product specification Leaded ceramic multilayer capacitors

BC06

Abstract: 2252 BC capacitor BC COMPONENTS k151j15c0gf5.h5 bc components K series capacitors
Contextual Info: BC COMPONENTS DATA SHEET Mono-kapTM series Leaded ceramic multilayer capacitors Product specification Supersedes data of November 1997 File under BC Components, BC06 1999 Apr 15 BC Components Product specification Mono-kapTM series Leaded ceramic multilayer capacitors

Philips capacitor mkp

Abstract: Philips 46102 74112 74272 philips kp capacitors 14821 24512 74132 74202 BC05
Contextual Info: BC COMPONENTS DATA SHEET KP/MKP 375 AC and pulse metallized polypropylene film capacitors Product specification Supersedes data of March 1998 File under BC Components, BC05 1999 Apr 29 BC Components Product specification AC and pulse metallized polypropylene film

BC211

Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS
Contextual Info: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they

bc components mono-kap

Contextual Info: BC COMPONENTS DATA SHEET Numerical index Leaded ceramic multilayer capacitors Supersedes data of November 1997 File under BC Components, BC06 1999 Aug 10 BC Components Leaded ceramic multilayer capacitors Numerical index NUMERICAL INDEX preferred types Sequence of catalogue numbers in accordance with the “12-DIGIT CODE”

transistor bc 138

Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
Contextual Info: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700

philips tcxo 4322 191

Abstract: TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250
Contextual Info: BC Components Product Guide 1999 Contents Page BC Components 5 World Wide Web 6 Ordering 7 New Products & Highlights 9 Series Index 10 Ceramic Capacitors, Leaded 13 Film Capacitors 34 Electrolytic Capacitors 59 Film Dielectric Trimmer Capacitors 103 Fixed Linear Resistors

InGaas PIN photodiode, 1550 nec

Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
Contextual Info: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is

NR8360JP-BC

Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Contextual Info: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated

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h7cl

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PEX8524-BC25BI

Abstract: 8524BB 8524AA D40H s 9413 re-enumeration PEX8111 pex 8516
Contextual Info: ExpressLane PEX 8524VAA/BB/BC and PEX 8524BB/BC 6-Port/24-Lane Versatile PCI Express Switch Data Book Version 1.5 February 2007 Website www.plxtech.com Technical Support www.plxtech.com/support/ Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2007 by PLX Technology, Inc. All Rights Reserved – Version 1.5

NX7361JB-BC

Abstract: NX7361JB-BC-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode

Laser FP 1550 mW

Abstract: NX7561JB-BC
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

4951gm

Abstract: NX7361JB-BC
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 150 mW MIN NX7361JB-BC FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode

NX7561JB-BC

Abstract: NX7561JB-BC-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

NX7661JB-BC

Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP

nec laser diode OTDR

Abstract: NX7661JB-BC NX7661JB-BC-AZ
Contextual Info: NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION 120 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1% NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

00yw

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BC 2222 136 68221

Abstract: bc 136 radial capacitor bc 136 rli radial capacitor BC capacitor 136 136 RVI BC 136 2222 135 56221 datasheet 30122 BC 116 capacitor transistor Bc 540
Contextual Info: BC Components Product specification Aluminum electrolytic capacitors Radial, Very Low Impedance 136 RVI FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte handbook, 4 columns • Radial leads, cylindrical aluminum case with pressure relief, insulated

bc 5478

Abstract: transistors BC 458 BC 641 bc 457 BC 458 transistor BC 458 transistor bc 855 NTC 279 2322 74 66153
Contextual Info: BC Components Product specification NTC thermistors, moulded range FEATURES 2322 641 6. QUICK REFERENCE DATA • Excellent for surface measurement • Designed for harsh environments • Based on the “2322 640 0.” naked thermistor chips. APPLICATION