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    BC327 NPN TRANSISTOR Search Results

    BC327 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC327 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc327

    Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
    Text: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC327-25 BC327-25 BC327-40 BC327-40 SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPES ARE BC337-25 AND BC337-40 RESPECTIVELY


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    PDF BC327-25 BC327-40 BC337-25 BC337-40 bc327 BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25

    BC327

    Abstract: pin configuration Bc337 BC337 BC337 npn pin configuration Bc327 BC33716
    Text: BC327 & BC337 General Purpose Transistors General Description and Suggested Applications: • PNP/NPN Silicon Planar Epitaxial Transistors. • Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers BC327 PNP BC337 NPN TO-92 Plastic Package


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    PDF BC327 BC337 BC327 BC337 pin configuration Bc337 BC337 npn pin configuration Bc327 BC33716

    BC337-25

    Abstract: bc33725 BC337-40 BC33740 bc337 BC337-40 t d bc337 40 BC337-40 TO92 BC337 NPN transistor datasheet BC327-25
    Text: BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC337-25 BC337-25 BC337-40 BC337-40 SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELY


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    PDF BC337-25 BC337-40 BC327-25 BC327-40 BC337-25 bc33725 BC337-40 BC33740 bc337 BC337-40 t d bc337 40 BC337-40 TO92 BC337 NPN transistor datasheet

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC


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    PDF BC327, BC327A, BC328 BC337, BC337A, BC338 C-120

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


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    PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.


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    PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337

    transistor c32725

    Abstract: c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
    Text: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 — 21 February 2005 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1: Product overview Type number Package NPN complement Philips


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    PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W transistor c32725 c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740

    transistor c32725

    Abstract: c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274
    Text: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA


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    PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 transistor c32725 c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274

    C32725 NPN transistor

    Abstract: C32740 NPN transistor C32740 C32716 C32725
    Text: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA


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    PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 C32725 NPN transistor C32740 NPN transistor C32740 C32716 C32725

    BC327 45V 800mA PNP Transistor

    Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.


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    PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor

    BC337L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G


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    PDF BC337/BC338 BC327/328 BC337L/BC338L BC337G/BC338G BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K BC337L-x-T92-B BC337L-x-T92-K BC337L

    BC337L

    Abstract: NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L
    Text: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free


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    PDF BC337/BC338 BC327/328 BC337L-x-T92-B BC337G-x-T92-B BC337L-x-T92-K BC337G-x-T92-K BC337L-x-T92-R BC337G-x-T92-R BC338L-x-T92-B BC338G-x-T92-B BC337L NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


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    PDF BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327

    BC327

    Abstract: BC328 BC337 BC338 BOX69477 BCJ28 NPN bc338
    Text: BC 327 • BC 328 J PNP SILICON AF MEDIUM POWER TRANSISTORS i CASI TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


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    PDF BC327, BCJ28 BC328 BC337Â BC338 O-92F BC327 625mW BC337 BOX69477 NPN bc338

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


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    PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    Untitled

    Abstract: No abstract text available
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage


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    PDF BC337/338 BC327/BC328 BC337 BC338 100mA 300mA

    bc337

    Abstract: BC338-25 BC338 BC327 NPN transistor
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector Emitter Voltage


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    PDF BC337/338 BC327/BC328 BC337 BC338 BC337, bc337 BC338-25 BC338 BC327 NPN transistor

    Untitled

    Abstract: No abstract text available
    Text: BC337 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. “ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Suitable For AF-Driver Stages And Low Power Output Stages * Complement To Bc327 ABSOLUTE MAXIMUM RATINGS at Tamb-25°C


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    PDF BC337 Bc327 Tamb-25Â 100uA 100mA Ic-300mA 500mA 300mA 50MHz

    BC327

    Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


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    PDF BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor

    BC337

    Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327

    Untitled

    Abstract: No abstract text available
    Text: BC 337 • BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 11 _ 1 CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS; WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    PDF BC337» BC338 BC337, BC327, BC328 O-92F BC337 625mW

    BC327 45V 800mA PNP Transistor

    Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


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    PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor

    BC358

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC358 BC327

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


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    PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor