BC328 NPN Search Results

BC337 CBE

Abstract: bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC337 BC338 BC338 CBE
Contextual Info: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

BC337 CBE

Abstract: BC338 CBE 10D3 BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16 BC337
Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW

Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

BC327 NPN transistor datasheet

Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
Contextual Info: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92

BC327

Abstract: BC328 BC337 BC338 BOX69477 BCJ28 NPN bc338
Contextual Info: BC 327 • BC 328 J PNP SILICON AF MEDIUM POWER TRANSISTORS i CASI TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338

Contextual Info: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

Contextual Info: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338

bc 327 complementary pair

Abstract: BC327 BC328 BC337 BC338
Contextual Info: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338

BC328

Abstract: BC338 BC338N
Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.

Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.

bc337

Abstract: BC338-25 BC338 BC327 NPN transistor
Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector Emitter Voltage

transistor 835

Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Contextual Info: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558

Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.

Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)

equivalent for BC337

Abstract: NPN general purpose transistor BC337 BC337-25 PNP transistor download datasheet bC328 philips BC327 NPN transistor datasheet TRANSISTOR BC337-25 PNP equivalent for BC327 BC337 equivalent BC337 NPN transistor datasheet bc3378
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327; BC327A; BC328 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 Philips Semiconductors Product specification

bc337 transistor datasheet

Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338
Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage

BC182 BC547

Abstract: bc557 TO92C
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328

TRANSISTOR BC338

Abstract: BC328 BC338
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.

BC338N

Abstract: BC328 BC338 2BC328
Contextual Info: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K

BC328

Abstract: BC338 2BC338
Contextual Info: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Emitter Voltage

Contextual Info: | a B C 338 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Package: TO-92 * Suitable For AF-Driver Stages And Low Power Output Stages * Complement to Bc328 a ABSOLUTE MAXIMUM RATINGS at Tamb=25'C

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.