BC337 Search Results
BC337 Price and Stock
Rochester Electronics LLC BC337-25RL1GTRANS NPN 45V 0.8A TO92 |
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BC337-25RL1G | Bulk | 133,859 | 3,122 |
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Rochester Electronics LLC BC33716TRANS NPN 45V 0.8A TO-92-3 |
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BC33716 | Bulk | 56,481 | 3,643 |
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Rochester Electronics LLC BC337-25RL1SMALL SIGNAL BIPOLAR TRANSISTOR |
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BC337-25RL1 | Bulk | 30,000 | 5,453 |
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Rochester Electronics LLC BC337-16ZL1GTRANS NPN 45V 0.8A TO92 |
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BC337-16ZL1G | Bulk | 25,033 | 5,453 |
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onsemi BC33725TATRANS NPN 45V 0.8A TO-92-3 |
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BC33725TA | Cut Tape | 24,055 | 1 |
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BC33725TA | Ammo Pack | 14,000 | 10 Weeks | 2,000 |
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BC33725TA | 16,314 |
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BC33725TA | 564,000 | 10 Weeks | 2,000 |
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BC33725TA | Reel | 14,000 | 2,000 |
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BC33725TA | 6,137 | 1 |
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BC33725TA | 2,201 | 1 |
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BC33725TA | 8,000 |
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BC33725TA | 10 Weeks | 18,000 |
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BC33725TA | 2,000 | 11 Weeks | 2,000 |
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BC33725TA | 12 Weeks | 2,000 |
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BC33725TA | 8,000 |
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BC33725TA | 286,000 | 1 |
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BC337 Datasheets (398)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC337 |
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Si-Epitaxial PlanarTransistors | Original | 84.33KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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NPN EPITAXIAL SILICON TRANSISTOR | Original | 30.56KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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NPN Epitaxial Silicon Transistor | Original | 22.68KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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Switching and Amplifier Applications | Original | 24.02KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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NPN general purpose transistor | Original | 296.27KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | General Semiconductor | General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin | Original | 228.16KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | General Semiconductor | Small Signal Transistors (NPN) | Original | 247.25KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Korea Electronics | TRANS GP BJT NPN 45V 0.8A 3TO-92 | Original | 72.09KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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BC337 - 45 V, 500 mA NPN general-purpose transistors - Complement: BC327 ; fT min: 100 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 45 V | Original | 228.03KB | 19 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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Amplifier Transistors NPN Silicon | Original | 63.32KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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Amplifier Transistor NPN | Original | 121.81KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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Amplifier Transistor NPN | Original | 77.86KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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NPN general purpose transistor | Original | 48.63KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 |
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Small-signal Transistors | Original | 4.52KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC337 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Siemens | NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) | Original | 152.67KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Sinyork | Mini size of Discrete semiconductor elements | Original | 506.13KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Various Russian Datasheets | Transistor | Original | 84.39KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC337 | Vishay Semiconductors | Small Signal Transistors (NPN) | Original | 182.16KB | 4 |
BC337 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC |
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BC327, BC327A, BC328 BC337, BC337A, BC338 C-120 | |
BC337AContextual Info: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted |
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BC337A 800mA. BC337A | |
Contextual Info: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM PLEMENTARY TO THE NPN TYPE BC337, BC338 |
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O-92F BC327, BC328 BC337, BC338 BC327 BC328 6251BW | |
BC307
Abstract: BC327 BC328 BC338 BC327 W 75
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BC327/328 BC337/BC338 BC327 BC328 BC307 BC327 BC328 BC338 BC327 W 75 | |
equivalent for BC327
Abstract: BC327 BC328 BC338 bc337 m 337a
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BC327/A BC328 BC337/A BC338 338Rev 290606D C-120 equivalent for BC327 BC327 bc337 m 337a | |
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* |
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BC337-16 BC337-25 BC337-16 TN3019A | |
bc337
Abstract: equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER
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BC337 bc337 equivalent for BC337 BC337 equivalent bc337 transistor datasheet BC337 hfe bc337 transistor Transistor BC337 BC-337 HT640 ENCODER | |
BC337
Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
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BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 | |
bc327
Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
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BC327-25 BC327-40 BC337-25 BC337-40 bc327 BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 | |
BC337 NPN transistor datasheet
Abstract: bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 QW-R201-039 OF TRANSISTOR BC337
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BC337/338 BC327/328 BC337 BC338 100mA 300mA 500mA, QW-R201-039 BC337 NPN transistor datasheet bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 OF TRANSISTOR BC337 | |
BC337
Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
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M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips | |
BC331
Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
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BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337 BC331 BC331 transistor transistor BC331 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 | |
Contextual Info: SWITCHING AND AMPLIFIER APPLICATIONS •Suitable for AF-Driver stages and low power output stages ·Complement to BC337 ABSOLUTE MAXIMUM RATINGS TO-92 TA=25 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES -50 V Collector-Emitter Voltage VCEO |
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BC337 -10mA -100mA -30mA -500mA -50mA -300mA -10mA | |
BC338-16
Abstract: BC337 BC337 B 011
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BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC338-16 BC337 B 011 | |
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Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors SYMSEMI SEMICONDUCTOR BC3 37, -16, -25,-40 n p n transistor BC3 38, -16, -25,-40 FEATURES Power dissipation PCM : 0.625 W (Tamb=25 °C) Collector current Icm • 0.8 A Collector base voltage V cbo : BC337 |
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BC337 BC338 270TYP 050TYP | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR(NPN ) BC338,-16,-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.8 A Collector-base voltage |
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BC337ï BC338ï BC337 BC338 100MHz 270TYP 050TYP | |
BC33BContextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC337-25 BC337-40 BC337A Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min *c PD (W) (A) @Tc=25°c 50 45 5 0.625 0.5 50 60 45 60 5 5 0.625 0.5 |
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BC413B BC414 BC414B BC445A BC447 BC447A BC447B BC449 O-92-1 BC413 BC33B | |
bc337
Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
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BC337 BC338 BC337, BC337-16, BC337-25, BC337-40, BC338-25 226AA) cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716 | |
Contextual Info: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified |
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BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038 | |
BC337LContextual Info: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G |
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BC337/BC338 BC327/328 BC337L/BC338L BC337G/BC338G BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K BC337L-x-T92-B BC337L-x-T92-K BC337L | |
bc 327 complementary pair
Abstract: BC327 BC328 BC337 BC338
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BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337 | |
BC337 45V 800mA NPN Transistor
Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
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BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337 | |
BC338
Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
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DDE7530 BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337A BC337 BC327 BC337-16 DDE7532 | |
BC337-40
Abstract: BC337-25 BC33740 BC337-40 t d bc33725 bc337 BC327-40 BC337-40 TO92 BC327-25 BC337-25-AP
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BC337-25 BC337-40 BC337-25 BC337-25-AP BC337-40 BC337-40-AP BC33740 BC337-40 t d bc33725 bc337 BC327-40 BC337-40 TO92 BC327-25 BC337-25-AP |