BC807 ITT Search Results

Contextual Info: MOTOROLA Order this document by BC807-16LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 base " 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage

bc807

Abstract: BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 BC807B
Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38

Contextual Info: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G

Contextual Info: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 - J U N E 1996 I PARTM ARKING DETAILS BC807 - 5DZ BC808 c jp E - 5HZ BC807-16 - 5AZ BC808-16 - 5EZ B C 8 0 7 -2 5 -5 B Z BC808-25 - 5FZ BC807-40 - 5CZ BC808-40 - 5GZ B CO M PLEM ENTARY TYPES

BC807-40LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 % EMITTER 1 jW 2 MAXIMUM RATINGS Rating Symbol Value C o llecto r- Emitter Voltage VCEO -4 5 V C ollector-B ase Voltage VCBO -5 0

BC807-40LT1

Abstract: marking KD SOT23
Contextual Info: MAXIMUM RATINGS Rating Collector-Em itter V oltage Symbol Value Unit v CEO -4 5 V C ollector-Base V oltage VCBO -5 0 V Em itter-Base V oltage v EBO -5 .0 V 'c - 500 m Adc Collector Current — C o n tin u o u s BC807-16LT1 BC807-25LT1 BC807-40LT1 CASE 318-07, STYLE 6

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BC807 = 5D A L L D IM E N S IO N S IN m m B C 8 0 7 -1 6 - 5A B C 807-25 * 5B BC807-40 = 5C 3.0 BCB08 - 5H 2.8 0.48 B C 808-16 - 5E B C 808-25 = 5F

Contextual Info: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)

BC807-16

Abstract: BC807-25 BC807-40 BC817
Contextual Info: BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817 SOT-23

transistor af 178

Abstract: BC807 BC817-16 BC817-25 BC817-40 MC9100
Contextual Info: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807

Bc807SOT-23

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Feb 28 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).

s2kj

Abstract: BC807 BC807-16 BC807-25 BC807-40 BC817 CDV1000
Contextual Info: BC807 -16/ -25/ -40 VISHAY PNP SURFACE MOUNT TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817

Contextual Info: BC807 -16/ -25/ -40 VISHAY PNP SURFACE MOUNT TRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features 310 mW Power Dissipation Ideally Suited tor Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplitier Applications Complementary NPN Types Available BC817)

C5 MARKING TRANSISTOR

Abstract: BC807 BC808 marking code 9FB marking 9fb 9fb transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to B C 817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollecto r E m itter Voltage

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC807/BC808 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC817/BC 818 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector Em itter Voltage

marking 8fb

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage

Contextual Info: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.

marking code 6Cp

Abstract: code marking 6Cp sot-23 BC817B 817b
Contextual Info: J B C 817 B C 818 K. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f audio amplifiers in thick and thin -film hybrid circuits. P-N-P complements are BC807; R and BC808; R respectively.

code marking 5Cp sot-23

Abstract: bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC817 BC818
Contextual Info: • bbSB^ai □□2443’ì D7T M A R X N AUER PHILIPS/DISCRETE BC807 BC808 b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f aufio amplifiers in th ick and th ln -film hybrid circuits.

BC817C

Abstract: BC818C BC808R 6dp sot-23 bc818r
Contextual Info: BC817 BC818 SILICON PLANAR EPITAXIAL TR A NSISTO R S N-P-N transistors, in a SOT-23 plastic package fo r use in d river and o u tp u t stages o f audio a m plifiers in th ic k and th in -film h y b rid circu its. P-N-P com plem ents are BC807; R and BC808; R respectively.

BC807C

Contextual Info: BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic package fo r use in d rive r and o u tp u t stages o f audio am p lifie rs in th ic k and th in -film h y b rid circuits. N-P-N com plem ents are BC817, R and BC818; R respectively.

marking code va transistors

Abstract: BC807 BC808 sot-23 Marking sj
Contextual Info: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • SUITABLE FO R A F D R IV E R S T A G E S AN D LOW PO W ER O U TPU T S TA G E S • Com plem en t to BC817/BC818 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra c te r is tic

lt 8227

Contextual Info: Page Products S p e c if ic a t io n SST / SOT-23 BC807 Type F D '.'514-807 1. B C 8 SCOPE 1 .1 07 T h is s p e c i f i c a t io n co v e rs the d e t a i l re q u irem e n ts one type P N P ¡s ilic o n e p it a x i a l p la n a r t r a n s is t o r fo r

Contextual Info: SOT23 NPN SIUCON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -¡u n e 1996_ O _ PAR TM ARKING DETAILS BC817 -6 D Z BC818 - 6HZ B C 8 1 7 -1 6 -6 A Z BC818-16 - 6EZ BC817-25 - 6BZ BC818-25 - 6FZ BC817-40 - 6CZ BC818-40 - 6GZ C O M PLEM ENTAR Y TYPES