| BC856W |
|
Diotec
|
Surface mount Si-Epitaxial PlanarTransistors |
|
Original |
PDF
|
123.23KB |
2 |
| BC856W |
|
Galaxy Semi-Conductor Holdings
|
PNP Silicon Epitaxial Planar Transistor |
|
Original |
PDF
|
131.99KB |
3 |
| BC856W |
|
Infineon Technologies
|
PNP Silicon AF Transistors |
|
Original |
PDF
|
235.3KB |
8 |
| BC856W |
|
Infineon Technologies
|
PNP Silicon AF Transistors |
|
Original |
PDF
|
132.25KB |
8 |
| BC856W |
|
Kexin
|
PNP General Purpose Transistor |
|
Original |
PDF
|
47.6KB |
2 |
| BC856W |
|
Korea Electronics
|
General Purpose Transistor |
|
Original |
PDF
|
73.15KB |
3 |
| BC856W |
|
NXP Semiconductors
|
BC856W - PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V |
|
Original |
PDF
|
92.61KB |
10 |
| BC856W |
|
Philips Semiconductors
|
PNP General Purpose Transistor |
|
Original |
PDF
|
75.11KB |
12 |
| BC856W |
|
Philips Semiconductors
|
PNP general purpose transistors |
|
Original |
PDF
|
51.99KB |
12 |
| BC856W |
|
Philips Semiconductors
|
PNP General Purpose Transistor |
|
Original |
PDF
|
83.42KB |
3 |
| BC856W |
|
Siemens
|
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
Original |
PDF
|
279.54KB |
8 |
| BC856W |
|
Siemens
|
Cross Reference Guide 1998 |
|
Original |
PDF
|
27.35KB |
7 |
| BC856W |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
|
Original |
PDF
|
465.63KB |
37 |
| BC856W |
|
TY Semiconductor
|
PNP General Purpose Transistor - SOT-323 |
|
Original |
PDF
|
76.89KB |
2 |
|
|
| BC856W |
|
Korea Electronics
|
EPITAXIAL PLANAR PNP TRANSISTOR |
|
Scan |
PDF
|
249.25KB |
3 |
| BC856W |
|
Korea Electronics
|
General Purpose Transistor |
|
Scan |
PDF
|
297.47KB |
3 |
| BC856W |
|
Philips Semiconductors
|
PNP General Purpose Transistors |
|
Scan |
PDF
|
116.96KB |
6 |
| BC856W,115 |
|
NXP Semiconductors
|
PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd |
|
Original |
PDF
|
92.7KB |
10 |
| BC856W,135 |
|
NXP Semiconductors
|
PNP general purpose transistors - Complement: BC846W ; fT min: 100 MHz; hFE max: 475 ; hFE min: 125 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 65 V; Package: SOT323 (SC-70); Container: Tape reel smd |
|
Original |
PDF
|
92.7KB |
10 |
| BC856W-BC860W |
|
Siemens
|
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
|
Original |
PDF
|
279.53KB |
8 |
