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    BC869 TRANSISTOR Search Results

    BC869 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC869 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    b3p3

    Abstract: cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869


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    M3D109 BC869 BC869-1e-mail SCA75 R75/05/pp11 b3p3 cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25 PDF

    BC869-16 SOT89 PHILIPS

    Abstract: PHILIPS BC869 BC869 BC869-16 BC869-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869


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    M3D109 BC869 BC869-1e-mail SCA76 R75/06/pp11 BC869-16 SOT89 PHILIPS PHILIPS BC869 BC869 BC869-16 BC869-25 PDF

    BC869-16 SOT89 PHILIPS

    Abstract: 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES


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    M3D109 BC869 BC869-1tion R75/06/pp11 BC869-16 SOT89 PHILIPS 13861 SOT89 marking cec BC869 BC869-16 BC869-25 SOT89 transistor marking 84 PDF

    marking chc

    Abstract: BC868 BC869 BC869-16 BC869-25 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of 1998 Jul 16 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A


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    M3D109 BC869 BC868. BC869-25 BC869-16 MAM297 SCA63 115002/00/04/pp8 marking chc BC868 BC869 BC869-16 BC869-25 BP317 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic.


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    BC869 BC869-16 BC869-25 25Vdc) 25Vdc, 150OC) PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features High current max. 1.0A Low voltage (max. 20V) Lead Free Finish/RoHS Compliant ("P" Suffix designates


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    BC869 BC869-16 BC869-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability


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    BC869 BC869-16 BC869-25 25Vdc) 25Vdc, 150OC) PDF

    marking chc

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability


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    BC869 BC869-16 BC869-25 marking chc PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High current max. 1.0A Low voltage (max. 20V) x Case Material: Molded Plastic. UL Flammability


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    BC869 BC869-16 BC869-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC869 BC869-16 BC869-25   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • High current max. 1.0A Low voltage (max. 20V) Lead Free Finish/RoHS Compliant ("P" Suffix designates


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    BC869 BC869-16 BC869-25 PDF

    LF 358

    Abstract: SOT89 marking cec BC868 BC869 BC869-16 BC869-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01 Philips Semiconductors Product specification PNP medium power transistor


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    M3D109 BC869 BC868. BC869-25 SCA53 117047/00/02/pp8 LF 358 SOT89 marking cec BC868 BC869 BC869-16 BC869-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    BCP69; BC869; BC69PA BCP69 BC869 SC-73 SC-62 O-243 BCP68 PDF

    cec "sot89"

    Abstract: BC869 SOT89 chc CHC SOT89
    Text: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE


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    BCX6925 BC868 BC869 BC869-16 BC869-25 BC869 -10mA* 150oC cec "sot89" SOT89 chc CHC SOT89 PDF

    BC869

    Abstract: cec "sot89" BC868 BC869-16 BC869-25 FMMT549
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 NPN PARTMARKING DETAILS -


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    BC869 BC868 BC869-16 BC869-25 150oC -100mA* BC869-16 BC869-25 -500mA, BC869 cec "sot89" BC868 FMMT549 PDF

    marking chc

    Abstract: SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC
    Text: Transistors SMD Type PNP Medium Power Transistor BC869 Features High current. Three current gain selections. 1.2 W total power dissipation. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -32 V Collector-emitter voltage


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    BC869 BC868 BC868-16 BC869-25 BC869-16 marking chc SOT89 marking cec BC868 BC868-16 BC869 BC869-16 BC869-25 MARKING SMD CEC PDF

    cec "sot89"

    Abstract: No abstract text available
    Text: PART OBSOLETE - USE BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE -


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    BCX6925 BC868 BC869 BC869-16 BC869-25 BC869 -10mA* 150oC cec "sot89" PDF

    cec PNP transistor

    Abstract: BC869-10
    Text: BC869 J v _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature package, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable for class-B audio output stages up to 3 W.


    OCR Scan
    BC869 BC868/BC869 OT-89. cec PNP transistor BC869-10 PDF

    transistor 103

    Abstract: BC869 BC869-10 BC869-16 BC869-25 marking code CFC SOT
    Text: 71 1 0 0 5 b DObfl4Sfl TT7 • P H I N BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC 868/BC869 is the matched complementary pair suitable for class-B audio output


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    711005b BC869 BC868/BC869 OT-89. BC869 transistor 103 BC869-10 BC869-16 BC869-25 marking code CFC SOT PDF

    BC869

    Abstract: BC869-10 BC869-16 BC869-25
    Text: • bbsa'm □Q24Mt15 m N AMER PHILIPS/DISCRETE ■ APX BC869 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic m icrom iniature envelope, intended fo r low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio o u tp u t


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    BC869 BC868/BC869 BC869 BC869-10 BC869-16 BC869-25 PDF

    transistor n53

    Abstract: BC869-10
    Text: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output


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    BC869 BC868/BC869 h\n53 transistor n53 BC869-10 PDF

    Thermal considerations for SOT89 in the General P

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS [Mm SMEET BC869 PNP medium power transistor 1998 Jul 16 Product specification Supersedes data of 1997 Apr 01 File under Discrete Semiconductors, SC10 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification


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    BC869 BC868. BC869 BC869-16 BC869-25 SCA60 04/00/03/pp8 Thermal considerations for SOT89 in the General P PDF

    SOT89 marking cec

    Abstract: MARKING 93 SOT89 SOT89 MARKING CODE B2 BC868 BC869 BC869-16 BC869-25 PNP TRANSISTOR "SOT89" PHILIPS BC869 BL SOT89
    Text: Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.


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    BC869 BC868. BC869-16 BC869-25 SOT89 marking cec MARKING 93 SOT89 SOT89 MARKING CODE B2 BC868 PNP TRANSISTOR "SOT89" PHILIPS BC869 BL SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869


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    BC868 BC869 BC868-16 BC868-25 BC868-16 BC868-25 500mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: I SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 •OCTOBER 1995 O_ BC868 m FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE- BC869


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    BC869 BC868 BC868-16 BC868-25 100nA BC868 500mA, PDF