BCR169 |
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Infineon Technologies
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PNP Silicon Digital Transistor |
Original |
PDF
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42.31KB |
4 |
BCR169 |
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Infineon Technologies
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Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
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256.33KB |
12 |
BCR169 |
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Unknown
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NPN Silicon Digital Transistor |
Original |
PDF
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116.31KB |
4 |
BCR169 |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
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465.63KB |
37 |
BCR169 |
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Siemens
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PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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36.07KB |
4 |
BCR169E6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 200MW SOT23-3 |
Original |
PDF
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11 |
BCR169E6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 200MW SOT23-3 |
Original |
PDF
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868.18KB |
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BCR169F |
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Infineon Technologies
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PNP Silicon Digital Transistor |
Original |
PDF
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505.61KB |
10 |
BCR 169F E6327 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSFP-3 |
Original |
PDF
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868.18KB |
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BCR169FE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSFP-3 |
Original |
PDF
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11 |
BCR169FE6327 |
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Infineon Technologies
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Digital Transistors - R1= 4,7 kOhm |
Original |
PDF
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218.93KB |
10 |
BCR169L3 |
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Infineon Technologies
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PNP Silicon Digital Transistor |
Original |
PDF
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505.61KB |
10 |
BCR 169L3 E6327 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 250MW TSLP-3 |
Original |
PDF
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320.31KB |
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BCR169L3E6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW TSLP-3 |
Original |
PDF
|
|
19 |
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BCR169L3E6327 |
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Infineon Technologies
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Digital Transistors - R1= 4,7 kOhm |
Original |
PDF
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218.93KB |
10 |
BCR169S |
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Infineon Technologies
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PNP Silicon Digital Transistor Array |
Original |
PDF
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117.16KB |
4 |
BCR169S |
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Infineon Technologies
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SOT363 package |
Original |
PDF
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43.09KB |
4 |
BCR169S |
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Infineon Technologies
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Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: PNP; R1 (typ): 4.7 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; |
Original |
PDF
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256.33KB |
12 |
BCR169S |
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Siemens
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PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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44.44KB |
4 |
BCR169S |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
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465.63KB |
37 |