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    BCV62C Price and Stock

    Infineon Technologies AG BCV62CE6327HTSA1

    TRANS 2PNP 30V 0.1A SOT143
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    DigiKey BCV62CE6327HTSA1 Reel 6,000 3,000
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    BCV62CE6327HTSA1 Cut Tape 840 1
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    BCV62CE6327HTSA1 Digi-Reel 1
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    Avnet Americas BCV62CE6327HTSA1 Reel 4 Weeks 1
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    BCV62CE6327HTSA1 Reel 4 Weeks 9,000
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    Mouser Electronics BCV62CE6327HTSA1 8,829
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    Verical BCV62CE6327HTSA1 6,000 3,000
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    BCV62CE6327HTSA1 5,355 73
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    BCV62CE6327HTSA1 466 98
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    Newark BCV62CE6327HTSA1 Cut Tape 2,520 5
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    BCV62CE6327HTSA1 Reel 3,000
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    Rochester Electronics BCV62CE6327HTSA1 3,000 1
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    Chip1Stop BCV62CE6327HTSA1 5,355
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    BCV62CE6327HTSA1 466
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    EBV Elektronik BCV62CE6327HTSA1 108,000 5 Weeks 3,000
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    GlobX GmbH BCV62CE6327HTSA1 672,039
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    New Advantage Corporation BCV62CE6327HTSA1 6,000 1
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    Nexperia BCV62C,215

    TRANS PNP 30V 100MA DUAL SOT143B
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    DigiKey BCV62C,215 Reel 3,000 3,000
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    BCV62C,215 Cut Tape 2,741 1
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    BCV62C,215 Digi-Reel 1
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    Mouser Electronics BCV62C,215 4,227
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    Verical BCV62C,215 225 225
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    Newark BCV62C,215 Cut Tape 2,583 5
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    BCV62C,215 Reel 3,000
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    BCV62C,215 Reel 3,000
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    Rochester Electronics BCV62C,215 793,220 1
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    TTI BCV62C,215 Reel 3,000
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    TME BCV62C,215 1,079 1
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    Avnet Silica BCV62C,215 288,000 8 Weeks 3,000
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    Chip1Stop BCV62C,215 Cut Tape 5,689
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    BCV62C,215 225
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    EBV Elektronik BCV62C,215 27,000 8 Weeks 3,000
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    Rochester Electronics LLC BCV62C,215

    NEXPERIA BCV62C - SMALL SIGNAL B
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    DigiKey BCV62C,215 Bulk 2,795 2,795
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    Micro Commercial Components BCV62C-TP

    Interface
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    DigiKey BCV62C-TP Bulk 3,000
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    Mouser Electronics BCV62C-TP
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    Nexperia BCV62C215

    Trans GP BJT PNP 30V 0.1A 4-Pin(3+Tab) SOT-143B T/R - Tape and Reel (Alt: BCV62C,215)
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    Avnet Americas BCV62C215 Reel 4 Weeks 2,864
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    BCV62C215 Reel 6,000
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    Avnet Asia BCV62C215 6 Weeks 9,000
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    BCV62C Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCV62C Infineon Technologies PNP Silicon Double Transistor Original PDF
    BCV62C Infineon Technologies PNP Silicon Double Transistor Original PDF
    BCV62C Infineon Technologies Transistors for Current Mirror Applications; Package: PG-SOT143-4; Polarity: PNP; VCEO (max): 30.0 V; Ptot (max): 300.0 mW; hFE (min): 420.0 - 800.0; IC: 2.0 mA; Original PDF
    BCV62C NXP Semiconductors BCV62C - PNP general purpose double transistor - Description: Current Mirror Original PDF
    BCV62C Philips Semiconductors PNP general purpose double transistor Original PDF
    BCV62C Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    BCV62C Siemens PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) Original PDF
    BCV62C,215 NXP Semiconductors BCV62 - TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal Original PDF
    BCV62C,215 NXP Semiconductors PNP general purpose double transistor - Description: Current Mirror; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BCV62CE6327 Infineon Technologies Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS DUAL PNP 30V 100MA SOT143 Original PDF
    BCV62CE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2PNP 30V 0.1A SOT143 Original PDF
    BCV62C-TP Micro Commercial Interface Original PDF
    BCV62CT/R NXP Semiconductors PNP general purpose double transistor - Description: Current Mirror Original PDF
    BCV62CTR Philips Semiconductors PNP general purpose double transistor Original PDF

    BCV62C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BCV62C Transistors Building Block Transistor Array Number of Devices1 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.420


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    PDF BCV62C StyleSOT-143

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


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    PDF BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    3Kp Transistor

    Abstract: BCV61 BCV62 BCV62A BCV62B BCV62C 3LP Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jun 18 1999 Apr 08 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max. 100 mA


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    PDF M3D071 BCV62 OT143B BCV61. 115002/00/03/pp8 3Kp Transistor BCV61 BCV62 BCV62A BCV62B BCV62C 3LP Transistor

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


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    PDF BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


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    PDF OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327

    ATF54143.s2p

    Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
    Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency


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    PDF ATF-54143 MTT-28, ATF-54143 5989-0852EN ATF54143.s2p 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF54143 atf54143 pHEMT AN-1222 BCV62C

    transistor c815

    Abstract: ATF-511P8 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm
    Text: ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago’s ATF-511P8 is an ­ enhancement mode PHEMT ­designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well suited as a base


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    PDF ATF-511P8 ATF-511P8 5988-9547EN AV02-0972EN transistor c815 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm

    CHB capacitor Series

    Abstract: ATF-521P8 BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D ATF-511P8
    Text: ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Avago’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is


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    PDF ATF-521P8 ATF-521P8 com/pdf/AN0002 ATF-511P8 CHB capacitor Series BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    ATF-531P8

    Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
    Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a


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    PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89

    ATF-511P8

    Abstract: R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D
    Text: Agilent ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Agilent’s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well


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    PDF ATF-511P8 ATF-511P8 5988-9547EN R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D

    R8121

    Abstract: ATF-501P8 0402CG189C9B200 ATF501P8 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20
    Text: ATF-501P8 Application Note ATF-501P8 Applications Information Description Agilent Technologies ATF501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited


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    PDF ATF-501P8 ATF501P8 45dBm com/products/data/appnotes/an178 ATF-54143 com/pdf/AN-0002 R8121 0402CG189C9B200 BCV62B ML200D low noise high frequency HEMT from agilent pHEMT transistor MTBF 0603CG100J9B20

    ATF-531P8

    Abstract: ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F
    Text: Low Noise and High Linearity Applications using the Agilent ATF-531P8 Application Note 1320 Introduction Agilent Technologies’ ATF-531P8 is an enhancement mode PHEMT designed for low noise and high linearity applications. With a noise figure of 1.16 dB and OIP3 of 40 dBm, ATF-531P8 is well suited as a


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    PDF ATF-531P8 ATF-531P8 5988-8237EN ATF-521P8 ATF531P8 BCV62B 0805ZC105KATZA RK73H1J68R1F

    agilent pHEMT transistor

    Abstract: transistor C715 ATF-531P8 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


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    PDF ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    diagram transistor tt 2140

    Abstract: Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB Agilent Technologies’s ATF-521P8 is a single-voltage high linearity, low noise


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    PDF ATF-521P8 5988-9974EN diagram transistor tt 2140 Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    3Kp Transistor

    Abstract: 3lp Transistor marking 3KP 3KP MARKING MARKING code 3lp
    Text: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1


    OCR Scan
    PDF BCV62 OT143B BCV61. BCV62B BCV62C BCV62 BCV62A OT143B) 3Kp Transistor 3lp Transistor marking 3KP 3KP MARKING MARKING code 3lp

    q 143 transistor

    Abstract: BCV62B M.H. Transistor 3LP Transistor
    Text: BCV62; 62A BCV62B; 62C SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic package, designed for use in applications where the working point must be independent of temperature. Owing to application of two similar crystals of one slice this device has a good thermal coupling and


    OCR Scan
    PDF BCV62; BCV62B; T-143 BCV62B BCV62C BCV62 q 143 transistor BCV62B M.H. Transistor 3LP Transistor

    PXTA14

    Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
    Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.


    OCR Scan
    PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401