BD 176 Search Results

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

IC 74157

Abstract: to 126 leistungstransistoren BD 176 BD176 BD180 BD178 "BO 180" B0180 TFK F BD 175 TFK G BD 175
Contextual Info: ► BD 176 • BD 178 • BD 180 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Allgemein im NF-Bereich Applications: Audio amplifier, driver and output stages General in AF-range

8d136

Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
Contextual Info: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6

transistor bD 288

Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339
Contextual Info: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.

transistor D 288

Abstract: TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62
Contextual Info: 2SC D • T - 3 3-'? fl23Sb05 000M3M2 7 M S I E 6 BD 287 BD 288 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 °- BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector Is electrically connected to the metallic mounting area.

BD NPN transistors 177

Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
Contextual Info: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range

alc860

Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
Contextual Info: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD

P1043-BD

Abstract: XP1043-BD XP1043-QH DM6030HK TS3332LD XP1043 ts333
Contextual Info: 12.0-16.0 GHz GaAs MMIC Power Amplifier P1043-BD January 2009 - Rev 23-Jan-09 Features 32 dBm Saturated RF Power 41 dBm Output IP3 Linearity 17 dB Gain Control On-Chip Power Detector 100% RF Testing General Description The XP1043-BD is a linear power amplifier that operates over

Contextual Info: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier

CHN 749

Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
Contextual Info: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_

BD 130 NPN transistor

Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Contextual Info: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

TRANSISTOR 431

Abstract: transistor 431 c BD177
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively VABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Symbol : BD175 : BD177 Rating VcBO : BD179 Collector Emitter Voltage

BD175

Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: Cable connector - MSTBT 2,5/ 4-ST CP1,2 BD:84-74 - 1768130 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's

Contextual Info: Cable connector - MSTBT 2,5/ 4-ST CP1,4 BD:13-24 - 1768075 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's

equivalent bd177

Abstract: BD175 BD177 BD179
Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: Extract from the online catalog MSTB 2,5/ 9-ST BD:1-9 Order No.: 1767627 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 9, Connection type: Screw connection,

Contextual Info: Extract from the online catalog MSTB 2,5/ 3-ST BD: 1-3 Order No.: 1765344 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 3, Connection type: Screw connection,

Contextual Info: Extract from the online catalog MSTB 2,5/ 9-ST BD:1-9 Order No.: 1767627 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 9, Connection type: Screw connection,

Contextual Info: Extract from the online catalog MSTB 2,5/12-ST BD:1-12 Order No.: 1765328 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 12, Connection type: Screw connection,

Contextual Info: Extract from the online catalog MSTB 2,5/12-ST-5,08 BD: 1-12 Order No.: 1767782 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5.08 mm, Number of positions: 12, Connection type: Screw

1769861

Contextual Info: Extract from the online catalog MSTB 2,5/ 8-ST BD: 1-8 Order No.: 1765315 Plug component, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 8, Connection type: Screw connection,