BDV65, BDV64 Search Results

darlington transistor with built-in temperature c

Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: Æ &MOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV64 .designed for general-purpose amplifier and low speed switching applications NPN BDV65 FEATURES: BDV64A BDV65A * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - BDV64.BDV65

BDV64B sgs-thomson

Abstract: dv65a BDV64
Contextual Info: BDV64/A/B BDV65/A/B SGS-THOMSON ILEO««! POWER DARLINGTONS DESCRIPTION The BDV65, BDV65A, BDV65B, are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are intended for use In power linear

BDV65

Contextual Info: ¿57 7^537 ^ T rZ 3 ~ Z ° \ G02Ô435 b • S G S -T H O M S O N RfflDO^HLHOTT^QlMO ! BDV64/A/B BDV65/A/B S G S-THOMSON 3QE D POWER DARLINGTONS D ESC RIPTIO N The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic

BDV64

Abstract: transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
Contextual Info: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

BDV65

Abstract: BDV65A BDV65B BDV65C
Contextual Info: Inchange Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV64/64A/64B/64C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier

BDV65, BDV64

Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
Contextual Info: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS

BDV65

Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
Contextual Info: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: TBANSYS • I BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS mCTRONICS LIMITED SOT-93 PACKAGE TOP VIEW • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

BDV64

Abstract: transistors BDV64B BDV64B BDV64A BDV64C
Contextual Info: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV65/65A/65B/65C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier

BDV65

Abstract: BDV65C BDV65B BDV65A
Contextual Info: SavantIC Semiconductor Product Specification BDV65/65A/65B/65C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

transistors BDV64B

Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
Contextual Info: SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.

BDV65

Abstract: BDV65B
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

BDV65

Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •

BDV65B

Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV65B

Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current

BDV65

Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64B

Abstract: bdv64 Bdv64a
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature

BDV64

Abstract: BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BDV65
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current

BDV65

Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64

Abstract: BDV64B BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C BDV65, BDV64
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64

Abstract: BDV65 BDV65B 1000 w audio amplifier diagram
Contextual Info: BDV65; 65A BDV65B; 65C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in m onolithic Darlington circu it fo r audio o utput stages and general am plifier and switching applications. P-N-P complements are BDV64, 64B and 64C. QUICK REFERENCE D A T A