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    BDX63 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDX63 Comset Semiconductors 60V NPN silicon darlington - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original PDF
    BDX63 Philips Semiconductors Silicon Darlington Power Transistors Original PDF
    BDX63 Semelab NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR Original PDF
    BDX63 Motorola European Master Selection Guide 1986 Scan PDF
    BDX63 Mullard Quick Reference Guide 1977/78 Scan PDF
    BDX63 Unknown Transistor Replacements Scan PDF
    BDX63 Unknown Transistor Replacements Scan PDF
    BDX63 Unknown Cross Reference Datasheet Scan PDF
    BDX63 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDX63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDX63 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BDX63 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDX63 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDX63 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDX63 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDX63 Unknown Transistor Replacements Scan PDF
    BDX63 Unknown Transistor Replacements Scan PDF
    BDX63 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDX63 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    BDX63 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BDX63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms,

    TRANSISTOR BDX

    Abstract: BDX63A Transistor 63B BDX63 BDX63B BDX62 transistor BDX 65 BDX62A BDX62B BDX62C
    Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.


    Original     		PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms, TRANSISTOR BDX BDX63A Transistor 63B BDX63 BDX63B BDX62 transistor BDX 65 BDX62A BDX62B BDX62C

    GT811

    Abstract: BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO Max (A) (V) (W) PD fT hre Min Max (Hz) Max tr Max (A) (8) ICBO r (CE)ut T Op«r Max (Ohms) Max (°C) 666m 666m 666m 175 175 175 175 200 200 175 175 150 150 Package Style Darlington Transistors, NPN (Cont'd)


    Original     		PDF BDX63A MJ1001 RCA1001 2N6056 PMD12K80 MJ1201 MJD122 2SD1590M GT811 BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    BDX63

    Abstract: BDX63A BDX63B BDX63C
    Text: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V


    Original     		PDF BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C

    Untitled

    Abstract: No abstract text available
    Text: r N AMER PHILIPS/DISCRETE 2SE D • 3 thS3i3i o a m M ? J BDX62; 62A BDX62B; 62(3 V T -33-3/ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,


    OCR Scan     		PDF BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 Juncti-31 7Z6732S tatiS3T31

    BDX62

    Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
    Text: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,


    OCR Scan     		PDF bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63C fxs 100 10

    BDX63

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b • BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A,


    OCR Scan     		PDF 0D111S7 BDX63; BDX63B; BDX62, BDX62C. T-33-29 bbS3T31 BDX63

    WF VQE 13

    Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E BDX62 WF vqe 13 D Wf vqe 14 WF VQE 12 BDX62A
    Text: N AMER PHILIPS/DISCRETE ESE D • D O in S ? b ■ BDX63; 63A BDX63B; 63C T -3 S -3 L 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A,


    OCR Scan     		PDF BDX63; BDX63B; BDX62, BDX62A, BDX62B BDX62C. BDX63 bfaS313L WF VQE 13 BDX63B wf vqe 14 e WF VQE 11 E BDX62 WF vqe 13 D Wf vqe 14 WF VQE 12 BDX62A

    but16

    Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
    Text: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A


    OCR Scan     		PDF MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A MJ901 BDX62A BDX63B BDX62B but16 MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006

    BDY11

    Abstract: BDY23 BDX65C
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC


    OCR Scan     		PDF BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C

    2N5417

    Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N5417 A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434

    PNP transistor A705

    Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311

    BF125

    Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L BF125 PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    X53A

    Abstract: BDX63A
    Text: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current


    OCR Scan     		PDF T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A

    BU 450 bdx

    Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
    Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A


    OCR Scan     		PDF BDV67 BDV66 BDV65 BDV64 BDX33 O-220 BDX53 BDX54 T0-220 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54

    Y220b

    Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 BD264A NS9726 UD3008 2N3837 2N5417

    BDW36

    Abstract: BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
    Text: _ 4ÖE D • Ö1331Ö7 O D D tm fl SEMELABI Û4D M S I 1 L B S E N E L A b " lT ] > 7T^y.tt BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Tun« N Niim Type um hor ber DDS29C Roi HnHfi Rel Code HR liDvyi wm2 BDV93 DDV94 DDV95 I1DV96 BDW21 1WW21A DIÏW21D


    OCR Scan     		PDF 1331B7 D0D044Ã BDS29C S0T93M 1000min BUV92 S0T93 BI1V93 I1DV94 BDW36 BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92

    tea 1601 t

    Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    BD264

    Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


    OCR Scan     		PDF

    k 117

    Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
    Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1


    OCR Scan     		PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCW35 BCY30A BCY31A T0532 BCY39A

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680