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Philips Semiconductors BDX63A
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BDX63 Datasheets (67)

Part	Manufacturer	Description	Datasheet Type	PDF
BDX63	Comset Semiconductors	60V NPN silicon darlington - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90	Original	PDF
BDX63	Philips Semiconductors	Silicon Darlington Power Transistors	Original	PDF
BDX63	Semelab	NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR	Original	PDF
BDX63	Motorola	European Master Selection Guide 1986	Scan	PDF
BDX63	Mullard	Quick Reference Guide 1977/78	Scan	PDF
BDX63	Unknown	Transistor Replacements	Scan	PDF
BDX63	Unknown	Transistor Replacements	Scan	PDF
BDX63	Unknown	Cross Reference Datasheet	Scan	PDF
BDX63	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BDX63	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BDX63	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
BDX63	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BDX63	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BDX63	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

BDX63	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BDX63	Unknown	Transistor Replacements	Scan	PDF
BDX63	Unknown	Transistor Replacements	Scan	PDF
BDX63	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BDX63	Semelab	Bipolar Transistors (CECC and High Rel) & High Energy	Scan	PDF
BDX63	Thomson-CSF	Shortform Semiconductor Catalogue 1982	Short Form	PDF

BDX63 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.	Original	PDF	BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms,
TRANSISTOR BDX Abstract: BDX63A Transistor 63B BDX63 BDX63B BDX62 transistor BDX 65 BDX62A BDX62B BDX62C Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.	Original	PDF	BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms, TRANSISTOR BDX BDX63A Transistor 63B BDX63 BDX63B BDX62 transistor BDX 65 BDX62A BDX62B BDX62C
GT811 Abstract: BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO Max (A) (V) (W) PD fT hre Min Max (Hz) Max tr Max (A) (8) ICBO r (CE)ut T Op«r Max (Ohms) Max (°C) 666m 666m 666m 175 175 175 175 200 200 175 175 150 150 Package Style Darlington Transistors, NPN (Cont'd)	Original	PDF	BDX63A MJ1001 RCA1001 2N6056 PMD12K80 MJ1201 MJD122 2SD1590M GT811 BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
BDX63 Abstract: BDX63A BDX63B BDX63C Text: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V	Original	PDF	BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C
Untitled Abstract: No abstract text available Text: r N AMER PHILIPS/DISCRETE 2SE D • 3 thS3i3i o a m M ? J BDX62; 62A BDX62B; 62(3 V T -33-3/ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,	OCR Scan	PDF	BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 Juncti-31 7Z6732S tatiS3T31
BDX62 Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10 Text: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,	OCR Scan	PDF	bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63C fxs 100 10
BDX63 Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b • BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A,	OCR Scan	PDF	0D111S7 BDX63; BDX63B; BDX62, BDX62C. T-33-29 bbS3T31 BDX63
WF VQE 13 Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E BDX62 WF vqe 13 D Wf vqe 14 WF VQE 12 BDX62A Text: N AMER PHILIPS/DISCRETE ESE D • D O in S ? b ■ BDX63; 63A BDX63B; 63C T -3 S -3 L 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A,	OCR Scan	PDF	BDX63; BDX63B; BDX62, BDX62A, BDX62B BDX62C. BDX63 bfaS313L WF VQE 13 BDX63B wf vqe 14 e WF VQE 11 E BDX62 WF vqe 13 D Wf vqe 14 WF VQE 12 BDX62A
but16 Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006 Text: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A	OCR Scan	PDF	MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A MJ901 BDX62A BDX63B BDX62B but16 MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
BDY11 Abstract: BDY23 BDX65C Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC	OCR Scan	PDF	BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C
2N5417 Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434 Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF	BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N5417 A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
PNP transistor A705 Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311 Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	PDF	NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311

BF125 Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF	BD265 BD265A BD265B Y220b BD265L BD266L BD267L BF125 PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
X53A Abstract: BDX63A Text: texas~ instr -c o p t o j bs dF \| 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current	OCR Scan	PDF	T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A
BU 450 bdx Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54 Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A	OCR Scan	PDF	BDV67 BDV66 BDV65 BDV64 BDX33 O-220 BDX53 BDX54 T0-220 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Y220b Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417 Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12	OCR Scan	PDF	BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N3836 BD264 BD263 BD264A NS9726 UD3008 2N3837 2N5417
BDW36 Abstract: BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92 Text: _ 4ÖE D • Ö1331Ö7 O D D tm fl SEMELABI Û4D M S I 1 L B S E N E L A b " lT ] > 7T^y.tt BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Tun« N Niim Type um hor ber DDS29C Roi HnHfi Rel Code HR liDvyi wm2 BDV93 DDV94 DDV95 I1DV96 BDW21 1WW21A DIÏW21D	OCR Scan	PDF	1331B7 D0D044Ã BDS29C S0T93M 1000min BUV92 S0T93 BI1V93 I1DV94 BDW36 BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
tea 1601 t Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001 Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,	OCR Scan	PDF
BD264 Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400 Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C	OCR Scan	PDF
k 117 Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1	OCR Scan	PDF	BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCW35 BCY30A BCY31A T0532 BCY39A
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

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BDX63 Price and Stock

Philips Semiconductors BDX63A

BDX63 Datasheets (67)

BDX63 Datasheets Context Search

Untitled

TRANSISTOR BDX

GT811

k2645

BUV48I

BDX63

Untitled

BDX62

BDX63

WF VQE 13

but16

BDY11

2N5417

PNP transistor A705

BF125

BPW22A

X53A

BU 450 bdx

Y220b

BDW36

tea 1601 t

BD264

k 117

aeg diode Si 61 L