BEAM LEAD PIN DIODE Search Results
BEAM LEAD PIN DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DE6B3KJ221KN4AE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
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DE6E3KJ102MA4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
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DE6E3KJ332MB4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
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DE6B3KJ221KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
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DE6B3KJ681KN4AE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
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BEAM LEAD PIN DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Ultrasonic welding circuit
Abstract: DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005
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HPND-4005 5965-8877E AV01-0593EN Ultrasonic welding circuit DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005 | |
MPND4005
Abstract: ir 0218 HPND-4005 beam lead pin diode
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HPND-4005 MPND4005-B1 MPND4005-B16 A17005 MPND4005 ir 0218 beam lead pin diode | |
MPN1000-12
Abstract: MicroMetrics pin diode MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12
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MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12 MPN1101-12 MPN1000-12 MicroMetrics pin diode MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12 | |
MA4P800Contextual Info: Silicon Beam Lead PIN Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are |
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MBP1030B11
Abstract: MBP1036B11 MBP-1030 MBP2030 MBP2030B11 MBP1035B11 MBP1036-B1 mbp1035 MBP2034B11 MICROWAVE TEST FIXTURE
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MBP1030-B1 MBP1033-B1 MBP1034-B1 MBP1035-B1 A17004 MBP1030B11 MBP1036B11 MBP-1030 MBP2030 MBP2030B11 MBP1035B11 MBP1036-B1 mbp1035 MBP2034B11 MICROWAVE TEST FIXTURE | |
IEC61249-2-21
Abstract: diode led ir DSG8100-000 DSG9500-000 DSM8100-000 BRO374-09A
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DSM8100-000) DSG9500-000) BRO374-09A IEC61249-2-21 diode led ir DSG8100-000 DSG9500-000 DSM8100-000 BRO374-09A | |
DSG6474Contextual Info: DSG6474-30 SILICON PIN SWITCHING DIODE PACKAGE STYLE PLANA BEAM LEAD DESCRIPTION: The DSG6474-30 is a Silicon Oxide Passivated Silicon Beam Lead PIN Diode Designed for Stripline and Microstrip Applications. MAXIMUM RATINGS I 50 mA V 200 V PDISS 250 mW @ TC = 25 °C |
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DSG6474-30 DSG6474-30 DSG6474 | |
beam lead pin diode
Abstract: ASB8000
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ASB8000 ASB8000 beam lead pin diode | |
ASB7000
Abstract: ASB 7000 ASB7003 ASB8000 1838 pin configuration A-SB
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DIMENS50NS 10fiA- ASB7000 ASB 7000 ASB7003 ASB8000 1838 pin configuration A-SB | |
MA4P800Contextual Info: AjÙ^m Silicon Beam Lead PIIM Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION 129 ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are |
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DSM8100-000
Abstract: silicon carbide
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DSM8100-000: DSM8100-000 silicon carbide | |
HPND-4038
Abstract: beam lead pin diode
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HPND-4038 HPND-4038 beam lead pin diode | |
ultrasonic phased array
Abstract: s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND-4028 HPND4038
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HPND-4028, HPND-4038 HPND-4028 5967-6157E AV01-0594EN ultrasonic phased array s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND4038 | |
beam lead pin diodeContextual Info: HPND-4018 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The HPND-4018 is a Beam Lead Pin Diode Designed for High Switching Applications Up to 18 GHz. PACKAGE STYLE BIC FEATURES INCLUDE: • Low CT - 0.025 pF Typical • Low RS - 5.0 Max. @ 10 mA • High Speed - τ = 40 nS Typical |
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HPND-4018 HPND-4018 beam lead pin diode | |
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diode rj 93
Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
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MA4PBL027 ODS-1302 diode rj 93 ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186 | |
40E-14
Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
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MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline | |
Contextual Info: PIN DIODES A " • ■jfv- 'v :>■: Dh Oh >C■t Ultra-fast Switching Silicon PIN Diodes. 14 Fast Switching Silicon PIN D io d e s . 15 Beam Lead PIN Diodes. 16 |
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MPB-1036-B11
Abstract: MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11
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250mWat MPB-2030 MPB-2034 TFP-1034 MPB-1036-B11 MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11 | |
HPND4050
Abstract: IC STU 404 D HPND-4050
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HPND-4050 D-4050 HPND4050 IC STU 404 D | |
MicroMetrics pin diode MPN1000-12
Abstract: MicroMetrics pin diode MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12
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MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12 MPN1101-12 MicroMetrics pin diode MPN1000-12 MicroMetrics pin diode MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 | |
ASB7000Contextual Info: 0258354 A D V A N C E D S E M I C O N D U C T O R 92D 00110 Ta 7W 7- DE I 02Sfi3S4 0DD0110 BEAM LEAD PIN DIODES ASI’s ASB 7000 SERIES are Planar Beam Lead PIN Diodes for use as series diodes up to 18 GHz in broadband multi-throw switches, phase shifters, limiters, attenuators and modulators for microstrip and |
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02Sfi3S4 0DD0110 ASB8000 ASB9000 ASB7000 | |
Contextual Info: Control Devices PLANAR BEAM LEAD PIN DIODES • Low Series Resistance • Low Capacitance • Fast Switching • Electrically Stable Performance • Sound Device and Lead Construction DESCRIPTION APPLICATIONS Hybrid microwave integrated circuit applications utiliz |
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GC4800 GC4801 GC4802 | |
GC4800
Abstract: GC4801 handling of beam lead diodes
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GC4800 GC4801 GC4801 handling of beam lead diodes | |
Contextual Info: Control Devices HIGH SPEED M ESA BEAM LEAD PIN DIODES • Ultra Fast Switching Speed • 5 Gram Typical Pull Strength • Very Low R/C Insertion/lsolation Products with Low Inductance GOLD LEAD CATHODE • High Quality, High Resistivity Epitaxy GOLD LEAD |
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MA01851 |