BF 163 TRANSISTOR Search Results

bf324

Abstract: transistor IR 324 C transistor IR 324 A transistor BF 324 BF324 transistor transistor BF324 Bf 324 transistor BF 450
Contextual Info: BF324 PNP Silicon Epitaxial Transistor with extremely small feedback capacitance, designed for base-grounded FM RF amplifiers in the range of 100 MHz. Jf | e - X V c J t 2.5 5*H »CO <r‘ L * ♦ in ♦ r*f E m ax.Q 5 0 1,25 Plastic case * JEDEC TO-92 TO-18 compatible.

transistor bc 7-40

Abstract: BF 163 TRANSISTOR transistor BF 164 bc 238c transistor transistor marking ac transistor B 722 FS transistor marking
Contextual Info: TELEFUNKEN ELECTRONIC SIC D V • STZOOlb 000S3D1 0 ■ ALGG Matted with: TKUUFdüMKiM electronic . . . . . MarkedWith: Creative Technologies F2 F5 BFS 19 pcc D T d Ì IQ R I» H “7 ^ " 3 / ~ / E Silicon NPN Epitaxial Planar RF Transistor Applications: General in thick and thin film circuits

transistor BF 164

Abstract: buv 47 i L61A
Contextual Info: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog*«* T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

BF295

Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

BF 295

Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

C785 transistor

Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

Transistor B36

Contextual Info: Whnl h e w le t t mina P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pon : @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

2222A

Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.

AT-33225

Abstract: AT-33225-TR1 transistor 2222a MSOP-3
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.

FZT948

Abstract: FZT949 DSA003718
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2- NOVEMBER m 1995 FEATURES * Extremely low equivalent * 6 Amps continuous current on-resistance; RCE{W) * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFEcharacteristics specified upto 20 Amps

BF 295

Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

FR4 epoxy dielectric constant 4.4

Abstract: e/AT-33225-BLK
Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency

Contextual Info: What H E W L E T T * mLliMPACKARD 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBmP011t@ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

TRANSISTOR C436

Abstract: 155E-15 L005 transistor
Contextual Info: START420 NPN Silicon RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family

START420

Abstract: START420TR Transistor F 0552 BF280 TRANSISTOR C436
Contextual Info: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation

START420

Abstract: START420TR bf280 L005 transistor nh TRANSISTOR
Contextual Info: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF

transistor Bf 981

Abstract: START540 START540TR BF320 SPECTRE MODEL transistor bf 968
Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

BF320

Abstract: transistor Bf 981 START540 START540TR 158E-1 transistor BF 506
Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

BF 245 A spice

Abstract: BF 494 C bf 494 transistor MJE 280 power transistor START420 420 NPN Silicon RF Transistor START420TR 27116 SPICE 2G6 TRANSISTOR C436
Contextual Info: START420 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START420 is a member of the START family that provide market with the state of the art of RF

Contextual Info: 1 mLttM PACKARD W h ü H E W L E T T NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Surface Mount Package • Operates Over a Wide Range SOT-343 SC-70 Features • • • • of Voltages and Frequencies +25.0 dBm PldB and 60 % Collector Efficiency @

AT-38043

Contextual Info: What HEW LETT* mLliM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. • 15 dB GldB @ 900 MHz,

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.