BF 234 SPICE Search Results

MAX478

Abstract: MAX4783 MAX4785 MAX479 MAX4793 MAX4795 MAX406B MAX921-924 max941 r1398
Contextual Info: Various Maxim Spice Macromodels MAX478 FAMILY MACROMODELS * -* FEATURES: * 17uA Max Supply Current * 70uV Max Offset Voltage * 250pA Max Input Offset Current * Input Voltage Range Includes Ground * Available in 8-Pin DIP/SO Dual MAX478

vexta

Abstract: mje 3001 RESISTOR BF 0207 BF243 BF 184 transistor NPN/NF 034 BF249 VAR10 bf345 BETA-240
Contextual Info: Semi-Custom & Custom Solutions Calogic designs and manufactures Semi-Custom and Custom Bipolar Junction Isolated Jl and Dielectrically isolated (Dl) products SPICE models, layout, DRC and ERC are available. These processes are executed in our own state of the art FAB

BFG425W

Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Contextual Info: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

BFP540F

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

BFP540

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking ats

Abstract: BFP540F
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

BFP540

Abstract: 030232
Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP540F

Contextual Info: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s 

Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4
For highest gain low noise amplifier at 1.8 GHz
Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB
Gold metallization for high reliability 1
SIEGET
45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

STR G 9656

Abstract: BFG590W npn transistors MATV amplifiers NF 0.8
Contextual Info: DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION

BFC520

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor

TRANSISTOR MARKING YB

Abstract: BFP420F BFP540F s parameters 4ghz
Contextual Info: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line to p v ie w " ! A T s  d ir e c tio n o f u n r e e lin g

ic marking Yb

Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

Philips FA 261

Abstract: str 5708 BFG403W
Contextual Info: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Apr 17 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES

TRANSISTOR C 2577

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector

str 5708

Abstract: BFG403W
Contextual Info: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES

transistor equivalent book FOR D 1047

Abstract: TR zo 103 ma PRF957 d 1047 transistor MGS513 marking 28 SOT323 uhf transistor equivalent 1047
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PRF957 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size

"MARKING CODE P4"

Abstract: BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668
Contextual Info: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES

PBR941

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor