BF 420 Search Results

BF423

Abstract: BF421 bf 421 ic 421 PIN CONFIGURATION BF 200 transistors bf 423 f 423 F532 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

ic 421

Abstract: F496 BF421 BF423 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

F495

Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

BF422

Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

Contextual Info: S IE M E N S PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 420, BF 422 NPN Type Marking Ordering Code BF 421 BF 423

BF 422

Contextual Info: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion

circuit diagram of ddr ram

Abstract: HYB18M1G16 hy power 38 HYB18M1G161BF-6 HYE18M1G16 HYB18M1G160BF-6
Contextual Info: March 2007 HYB18M1G16[0/1]BF–6 HYE18M1G16[0/1]BF–6 HYB18M1G16[0/1]BF–7.5 HYE18M1G16[0/1]BF–7.5 DRAMs for Mobile Applications 1-Gbit x16 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.0 Data Sheet HY[B/E]18M1G16[0/1]BF 1-Gbit DDR Mobile-RAM HYB18M1G16[0/1]BF–6, HYE18M1G16[0/1]BF–6, HYB18M1G16[0/1]BF–7.5

K 2545 transistor

Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S

Contextual Info: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1

Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

BF255

Abstract: IC 41 BF BF254 IS420 81-common Q62702-F201 Q62702-F202 marking code 41 BF TO92
Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configural ion 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

BF450

Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Contextual Info: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings

SO2-BF

Abstract: so2 sensor so2 sensor datasheet Alphasense gas sensor no2 1371 no2 sensor alphasense 4-20
Contextual Info: α S SO2-BF Sulfur Dioxide Sensor PATENT PENDING Technical Specification Figure 1 SO2-BF Schematic Diagram All dimensions in millimetres ± 0.1mm Top View Bottom View Side View Table 1 SO2-BF Specification PERFORMANCE * Sensitivity LIFETIME * Response time

Contextual Info: TC4511BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4511BP/TC4511 BF BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER TC4511BP/BF is decoder which converts the input of BCD code into the 7 segment display element driving signal and the output has complementary connection of

TC4511BP

Abstract: transistor BF 506 I-348 bt 141 A5056
Contextual Info: TC4511BB/BF C 2MOS D IG IT A L IN T E G R A TE D CIRC UIT SILIC O N M O N O LIT H IC TC4511BP/TC4511 BF BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER TC4511BP/BF is decoder which converts the input of BCD code into the 7 segment display element driving signal and the output has complementary connection of

transistors bf

Abstract: UL 821
Contextual Info: BF 821, BF 823 High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP PNP Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max

transistors bf

Abstract: to236
Contextual Info: BF 820, BF 822 NPN High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case Kunststoffgehäuse SOT-23 TO-236 Weight approx. – Gewicht ca.

TC4516BP

Abstract: TC4516
Contextual Info: TC4516BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4516BP/TC4516BF PRESETTABLE BINARY UP/DOUH COUNTER TC4516BP/BF is UP/DOWN 4 bit binary counter having asynchronous and PRESET functions. When RESET input is set to "H" level, the content of

TC4538

Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4538BP/BF TC4538BP/TC4538BF DUAL PRECISION RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR The TC4538BP/BF is the retriggerable/resettable monostable multivibrator and the trigger operation can be made at either the leading or trailing edge by

TC4516BP

Abstract: TC4516 TC4516BF 5056 counter up/down
Contextual Info: TC4516BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4516BP/TC4516BF PRESETTABLE BINARY UP/DOWN COUNTER TC4516BP/BF is UP/DOWN 4 bit binary counter having asynchronous and PRESET functions. When RESET input is set to "H" level, the content of

TC4516BP

Abstract: TC4516BF
Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4516BP/BF TC4516BP/TC4516BF PRESETTABLE BINARY UP/DOWN COUNTER TC4516BP/BF is UP/DOWN 4 bit binary counter having asynchronous and PRESET functions. When RESET input is set to "H" level, the content of

BF900

Abstract: marking BP LED 103BF Fototransistor fototransistor led Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3
Contextual Info: BP 103 B BP 103 BF .NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

TC4539BP

Contextual Info: TC4539BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4539BP/TC4539BF DUAL 4-CHANNEL DATA SELECTOR/MULTIPLEXER TC4539BP/BF contains two circuits of data selec­ tors which select data according to common address inputs A and B. Four channel data XO through X3 are selected to be

TC5012BP

Abstract: TC50128
Contextual Info: TC5012BP/BF C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC5012BP/TC5012BF HEX NON-INVERTING 3-STATE BUFFER TC5012BP/BF contains six circuits of non­ inverting buffers having three state output. Since DISABLE inputs to disable the outputs are provided separately, one common for four circuits and