BF TRANSISTOR SERIES DATASHEET 90 Search Results

Contextual Info: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty

shockley diode application

Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
Contextual Info: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for

BSV52

Abstract: HIGH SPEED SWITCHING NPN SOT23 mark B2 BSV52 fairchild 220-VIN
Contextual Info: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: AC-DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V - 275 VAC Operation • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350)

EMH350PSXX

Abstract: EMH350 SPHD-001T-P05 PHDR-12VS EMH350PSXX-01 EMH250PSXX
Contextual Info: AC DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty

transistor jst 26

Abstract: transistor jst 02
Contextual Info: AC DC 250/350 Watts EMH Series xppower.com • Single & Dual Output Models • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty 275 VAC Operation

SMD TRANSISTOR MARKING BF

Abstract: lm357 3578 smd japanese transistor reference manual 1N5819 spice model 3578AM SMD IN5819 vf SIMPLE SWITCHER PCB Layout Guidelines In5819 smd schottky transistor spice
Contextual Info: LM1578A/LM2578A/LM3578A Switching Regulator General Description Features The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the buck, boost, and inverting configurations. The LM1578A features a unique comparator input stage which not only has

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

mu24 dc

Abstract: SWT-2
Contextual Info: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration

CBVK741B019

Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

mpsh81 model

Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

BSV52

Abstract: SOT23 BSV52 mark B1 sot23
Contextual Info: BSV52 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol

PN4258

Abstract: CBVK741B019 F63TNR MMBT4258 PN2222N
Contextual Info: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 B SOT-23 E Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

switching transistor 331

Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A
Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol

6dr6

Contextual Info: 1234567 Voltage Regulator with LIN Transceiver 89ABCD9E7 o o Compatible to LIN Specification 2.0 and SAE J2602 Operating voltage VS = 6 . 18 V Low standby current consumption of typ. 15 µA in sleep mode 1 “noload” current < 200µA o Linear low drop voltage regulator 5V/70mA ±2%

PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

03n06

Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

switching transistor 331

Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol

PN4258

Abstract: PN2222N CBVK741B019 F63TNR MMBT4258
Contextual Info: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 B SOT-23 E Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted