BF-960 SPICE MODEL Search Results

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT11*9A ISSUE 1 - JANUARY - FEATURES * * VCEO=-25V 4 Am p Continuous Current * * 10 A m p Pulse Current Low Saturation voltage * High Gain ABSOLUTE MAXIMUM RATINGS.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

FZT1149A

Abstract: DSA003675
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1149A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch

Contextual Info: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

transistor I 17-13 0773

Contextual Info: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

CBC 184 transistor

Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

CBC 184 transistor

Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

IC pt 2399 CIRCUIT DIAGRAM

Abstract: AT-31625 Z-135 transistor pn 2222a Z-179 A74 SOT-223 sn 0426 z15a Z-156 Z156
Contextual Info: W hn% H E W L E T T 1"UM P A C K A R D 4.8 V NPN Common E m itter M edium Pow er O utput T ransistor Technical Data AT-31625 F eatu res • 4.8 V olt O peration • +28.0 dBm P out @ 900 MHz, Typ. MSOP-3 Surface M ount P lastic Package O utlin e 25 • 70% C o llecto r E fficien cy

testing motherboards using multi meter

Abstract: AMD-K6 AM-290 FERRITE BEAD 1000 OHM 0805 CS44E AMD-K6 Processor Hall sensors Siemens Magnetic Products, Soft Ferrites, Data Handbook Northbridge AMD K6
Contextual Info: AMD-K6 Processor ® EMI DESIGN CONSIDERATIONS Application Note Publication # 22023 Rev: C Issue Date: April 2000 Amendment/0 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

COP884

Contextual Info: COP688CL/COP684CL, COP888CL/COP884CL, COP988CL/COP984CL 8-Bit Microcontroller General Description The COP888 family of microcontrollers uses an 8-bit single chip core architecture fabricated with National Semiconductor’s M2CMOS process technology. The COP888CL is a

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

wireless power transfer using em waves matlab simulink

Abstract: PCB mounted 230 V relay Virtex-II FF1152 Prototype Board sot 23-5 marking code H5 BT 342 project Chirp modulation ber performance vhdl code for TRAFFIC LIGHT CONTROLLER using stat Motorola diode SMD code B13 xilinx vhdl code for 555 timer MARKING SMD IC CODE 8-pin
Contextual Info: Virtex-II Pro Platform FPGA Handbook UG012 v1.0 January 31, 2002 R R The Xilinx logo shown above is a registered trademark of Xilinx, Inc. The shadow X shown above is a trademark of Xilinx, Inc. "Xilinx" and the Xilinx logo are registered trademarks of Xilinx, Inc. Any rights not expressly granted herein are reserved.

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
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MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA