BF1100R, Search Results

BF1100R, Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF1100R	NXP Semiconductors	BF1100R - Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 14 V; YFS min.: 24 mS	Original	PDF	314.2KB	15
BF1100R	Philips Semiconductors	Dual-Gate MOS-FET	Original	PDF	108.1KB	14
BF1100R	Philips Semiconductors	Dual-gate MOS-FETs	Scan	PDF	382.69KB	12
BF1100R,215	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd	Original	PDF	314.22KB	15
BF1100R,235	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS; Package: SOT143R (SC-61B); Container: Tape reel smd	Original	PDF	314.22KB	15
BF1100RT/R	NXP Semiconductors	Dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.4 pF; I_D: 30 mA; I_DSS: 8 to 13 mA; I_DSS min.: 1.4 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V_DSmax: 14 V; Y_FS min.: 24 mS	Original	PDF	314.22KB	15
BF1100RTR	Philips Semiconductors	Dual-gate MOS-FET	Original	PDF	108.11KB	14