BF1109 |
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NXP Semiconductors
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BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SOT-4, 4 PIN, FET RF Small Signal |
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BF1109 |
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET |
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BF1109,215 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
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Original |
PDF
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BF1109,215 |
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NXP Semiconductors
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BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SOT-4, 4 PIN, FET RF Small Signal |
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Original |
PDF
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BF1109R |
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NXP Semiconductors
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BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
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Original |
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BF1109R |
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET |
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Original |
PDF
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BF1109R,215 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT143B (SOT4); Container: Tape reel smd |
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Original |
PDF
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BF1109R,215 |
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NXP Semiconductors
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BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SC-61B, 4 PIN, FET RF Small Signal |
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Original |
PDF
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BF1109WR |
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NXP Semiconductors
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BF1109WR - N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS |
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Original |
PDF
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BF1109WR |
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET |
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Original |
PDF
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BF1109WR,115 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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BF1109WR,115 |
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NXP Semiconductors
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BF1109 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, CMPAK-4, FET RF Small Signal |
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Original |
PDF
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BF1109WRT/R |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.5@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 11 V; YFS min.: 24 mS |
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Original |
PDF
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BF1109WRTR |
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Philips Semiconductors
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N-channel dual-gate MOS-FET |
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Original |
PDF
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