BF199
Abstract: BF199 RF transistor NPN BF199 bf199 motorola BF199 transistor
Text: MOTOROLA Order this document by BF199/D SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage
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BF199/D
BF199
BF199/D*
BF199
BF199 RF
transistor NPN BF199
bf199 motorola
BF199 transistor
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BF199
Abstract: BF199 FAIRCHILD SEMICONDUCTOR BF199 fairchild transistor NPN BF199 BF199 RF
Text: BF199 BF199 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 25 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current
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BF199
BF199
BF199 FAIRCHILD SEMICONDUCTOR
BF199 fairchild
transistor NPN BF199
BF199 RF
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bf199 equivalent
Abstract: transistor Common Base configuration BF199 data bf199 s parameters RF NPN POWER TRANSISTOR 100MHz BF199 RF india
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
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QSC/L-000019
BF199
C-120
BF199Rev310303E
bf199 equivalent
transistor Common Base configuration
BF199
data bf199
s parameters RF NPN POWER TRANSISTOR 100MHz
BF199 RF
india
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BF199
Abstract: MW front END transistor NPN BF199 transistor BF199 c 2579 transistor
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
MW front END
transistor NPN BF199
transistor BF199
c 2579 transistor
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BF199
Abstract: bF199 transistor data bf199 transistor NPN BF199 s parameters RF NPN POWER TRANSISTOR 100MHz
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
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QSC/L-000019
BF199
C-120
BF199Rev
240403E
BF199
bF199 transistor
data bf199
transistor NPN BF199
s parameters RF NPN POWER TRANSISTOR 100MHz
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BF199
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE
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BF199
C-120
BF199Rev
240403E
BF199
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BF199 parameters
Abstract: BF199
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless otherwise specified DESCRIPTION
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QSC/L-000019
BF199
C-120
BF199Rev110302D
BF199 parameters
BF199
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bf199 equivalent
Abstract: data bf199 RC-1008b transistor NPN BF199 bf199 test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 21 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage
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BF199
226AA)
bf199 equivalent
data bf199
RC-1008b
transistor NPN BF199
bf199 test
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
bF199 transistor
BF199
F 9016 transistor
transistor 9016 npn
03 transistor
data bf199
ic 9400
BF199 RF
transistor NPN BF199
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
BF199
transistor NPN BF199
bf199 transistor
BF199 RF
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transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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BF199 RF
Abstract: BF199 bF199 transistor transistor NPN BF199 transistor BF 199 transistor BF199 Bf 199 BF 199 transistor
Text: BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for em itter-grounded IF stages in TV sets. max. Q5# 1,25 Plastic case ~ JEDEC TO -92 T O -18 compatible The case is impervious to light
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BF199
case00
BF199 RF
BF199
bF199 transistor
transistor NPN BF199
transistor BF 199
transistor BF199
Bf 199
BF 199 transistor
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BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
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6535b05
00M5Mgfl
BF199
O-92d
BF599
BF240
BF840
BF241
BFQ58
BFQ57
BFT99
RF Bipolar Transistors
BFT97
BFP194
BF840
BFT65
BFR34A
BF450
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BFT98
Abstract: BF255 transistors bfs17p BFQ71 BF199 BFS55A
Text: RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors V r CEO l c N=NPN /t NF P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74
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BF199
BF240
BF241
BF254
BF255
BF414
BF450
BF451
BF506
BF606A
BFT98
transistors bfs17p
BFQ71
BFS55A
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Untitled
Abstract: No abstract text available
Text: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n .
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T0-92E
BF199
300mW
47MHz
35MHz
TELEX-43510
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BF199 RF
Abstract: bF199 transistor BF199 BF240 TO226AA
Text: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS R a tin g S ym b o l V alue U n it Co Ilector-E m itter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 40 Vdc Vdc Em itter-Base Voltage VEBO 4.0 Collector Current - Continuous ic 100 m Adc Total Device D issipation @ T a = 25°C
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BF199
O-226AA)
BF240
BF199 RF
bF199 transistor
TO226AA
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F240 transistor
Abstract: Transistor F240
Text: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS Sym bol Value U nit C o lle cto r-E m itte r Voltage VCEO 25 Vdc C ollector-B ase Voltage VCBO 40 Vdc E m itter-Base Voltage VEBO 4.0 Vdc C ollector C urrent - C ontinuous lc 100 m Adc Total Device D issipation (S> T a = 25°C
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BF199
O-226AA)
F240 transistor
Transistor F240
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BF199
Abstract: No abstract text available
Text: BF199 CASE 29-04, STYLE 21 TO-92 T0-226AA M A X I M U M R A T IN G S Rating Symbol Value C o lle c to r -E m itte r V olta g e VCEO 25 Unit Vdc C o lle c to r-B a s e V olta g e VCBO 40 Vdc E m itte r-B a s e V olta g e vebo 4 .0 Vdc C o lle ctor C u rre n t - C o n tin u o u s
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BF199
T0-226AA)
BF199
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BF transistor
Abstract: M50C BF199 M-50C bF199 transistor
Text: NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR IV IIC R O E L -.E C 3 T R O IV IIC 2 S CASE T 0-92E BF199 i s an NPN s i l i c o n p l a n a r e p i t a x i a l t r a n s i s t o r d e s ig n e d f o r RF a m p l i f i e r s and v id e o IF a m p l i f i e r s in common e m it t e r c o n f i g u r a t i o n .
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BF199
T0-92E
300mW
47MHz
35MHz
3-00iÃ
BF transistor
M50C
M-50C
bF199 transistor
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bf199
Abstract: data bf199 BF199 RF
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF T ransistor NPN Silicon COLLECTOR 1 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 25 Vdc C ollector-B ase Voltage v CBO 40 Vdc E m itte r-B a se Voltage v EBO 4.0 Vdc 'c 100 mAdc
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BF199
bf199
data bf199
BF199 RF
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n3904
Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in
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mpsh17
mpsh10
bf374
bf375
bf959
mps918
n3904
2n3903
2n4400
mps2369
CEB npn
BF509
pnp BF959
BF240 CEB
BF255
BF371 MOTOROLA
MPSH81
BF241 CEB
MPS3640
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PN3563
Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Text: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700
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SD113D
2N3663
T0-92
2N5179
MMBT5179
O-236*
MPS5179
2N5770
2N918
PN3563
MPSH24
2N3663
2N5179
2N5770
2N918
BF199
MMBT5179
MMBT918
MPS5179
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Untitled
Abstract: No abstract text available
Text: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700
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SD113D
2N3663
2N5179
MMBT5179
MPS5179
2N5770
2N918
MMBT918
PN918
BF199
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bf311
Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •
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BF115
O-72J
BF152
O-106
BF153
BF155
O-72G
BF158
bf311
BF494
BF253
BF595
BF200 transistor
BF271
BF184
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