BF556A |
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NXP Semiconductors
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BF556A - N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms |
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BF556A |
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Philips Semiconductors
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N-Channel Silicon Junction Field-Effect Transistor |
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BF556A |
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Philips Semiconductors
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N-Channel Field Effect Transistor |
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PDF
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BF556A |
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Philips Semiconductors
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N-Channel Silicon Junction Field Effect Transistor |
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Scan |
PDF
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BF556A,215 |
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NXP Semiconductors
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BF556 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
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BF556A,215 |
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NXP Semiconductors
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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BF556A,235 |
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NXP Semiconductors
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BF556A - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large |
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BF556A,235 |
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NXP Semiconductors
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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BF556AT/R |
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NXP Semiconductors
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms |
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BF556A T/R |
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Philips Semiconductors
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FET Transistor, N Channel, ID 7mA, Tape and Reel |
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BF556ATR |
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Philips Semiconductors
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N-channel silicon junction field-effect transistor |
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Original |
PDF
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