| BF556B |
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NXP Semiconductors
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BF556B - N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms |
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Original |
PDF
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122.87KB |
14 |
| BF556B |
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Philips Semiconductors
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N-Channel Silicon Junction Field-Effect Transistor |
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Original |
PDF
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66.58KB |
11 |
| BF556B |
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Philips Semiconductors
|
N-Channel Field Effect Transistor |
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Original |
PDF
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238.22KB |
8 |
| BF556B |
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Philips Semiconductors
|
N-Channel Silicon Junction Field Effect Transistor |
|
Scan |
PDF
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268.01KB |
9 |
| BF556B,215 |
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NXP Semiconductors
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BF556 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
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Original |
PDF
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122.87KB |
14 |
| BF556B,215 |
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NXP Semiconductors
|
N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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Original |
PDF
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63.3KB |
13 |
| BF556BT/R |
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NXP Semiconductors
|
N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 13 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms |
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Original |
PDF
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63.3KB |
13 |
| BF556B T/R |
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Philips Semiconductors
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FET Transistor, N Channel, ID 0.013A, Tape and Reel |
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Original |
PDF
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66.55KB |
11 |
| BF556BTR |
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Philips Semiconductors
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N-channel silicon junction field-effect transistor |
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Original |
PDF
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66.58KB |
11 |
