BF822 Search Results

BF822W

Contextual Info: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V

BF820

Abstract: BF821 BF822 BF823
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA

Contextual Info: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O.U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: BF820 BF822 COIL SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 ~2.8 ~ 0.14 0.09 0.48 0.38 § 3 Pin configuration 0.70 0.50 "1 1.4 1.2 2.6 2.4 R0.1 .004 " 1 = BASE 2 = EMITTER

BF820

Abstract: BF822
Contextual Info: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P -N transistors M arking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.8<f 0.60 0.40 2.00

BF820W

Abstract: BF822W BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF820W; BF822W NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN high-voltage transistors

BF820

Abstract: BF821 BF822 BF823 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES

1Y SOT-23

Contextual Info: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.

BF820

Abstract: BF822 transistors 10 KW
Contextual Info: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1

Contextual Info: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P -N transistors M arking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 • ^p T 5 9 0.48 0.38 0.70 0.50 "1 1.4 3 Fin configuration 2.6 1.2 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: Transistors SMD Type Product specification BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V Collector-emitter voltage (open base)

SMD transistor Marking 1x

Abstract: BF820 BF822
Contextual Info: Transistors SMD Type NPN High-Voltage Transistors BF820,BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage max. 300 V . 0.55 Low current (max. 50 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: •I bbSB'iai 00B47DQ =557 « A P X N AMER PHILIPS/DISCRETE BF820 BF822 b7E D y v SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P

2SC1861

Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index

00EM7

Abstract: BF820 BF821 BF822 BF823 oc16
Contextual Info: m bbS3T31 0Ü247G0 =557 • APX N AMER PHILIPS/DISCRETE BF820 BF822 b7E ]> SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope intended fo r application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.

BF820

Abstract: BF822
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Transistors SMD Type Product specification BF820,BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage max. 300 V . 0.55 Low current (max. 50 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BF820

Abstract: BF822
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V

BF820

Abstract: BF822
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR NPN SOT-23 1. BASE FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 2. EMITTER

MARKING J1A

Abstract: BF820 BF822
Contextual Info: CDU BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P -N transistors Markin8 BF820 = IV BF822 = IX PACKAGE O UTLIN E DETAILS A LL D IM EN SION S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

BF820 sot23

Abstract: BF820 BF821 BF822 BF823 BF820 NXP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA