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    BF909; Search Results

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    BF909; Price and Stock

    Rochester Electronics LLC BF909AWR,115

    RF MOSFET 5V CMPAK-4
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    DigiKey BF909AWR,115 Bulk 6,000 1,285
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    Rochester Electronics LLC BF909WR,115

    RF MOSFET 5V CMPAK-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF909WR,115 Bulk 3,000 1,285
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    NXP Semiconductors BF909,215

    RF MOSFET 5V SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF909,215 Reel 3,000
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    NXP Semiconductors BF909,235

    RF MOSFET 5V SOT143B
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    DigiKey BF909,235 Reel 10,000
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    NXP Semiconductors BF909A,215

    RF MOSFET SOT143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF909A,215 Reel 3,000
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    Rochester Electronics BF909A,215 374 1
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    BF909; Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    BF909
    		NXP Semiconductors BF909 - N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF 323.17KB 12
    BF909
    		Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF 117.82KB 11
    BF909
    		Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF 274.14KB 9
    BF909,215
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF 323.12KB 12
    BF909,235
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF 323.12KB 12
    BF909A,215
    		Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143B Original PDF 12
    BF909AR,215
    		Philips Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH SOT-143R Original PDF 12
    BF909AWR,115
    		NXP Semiconductors RF FETs, Discrete Semiconductor Products, MOSFET N-CH 7V 40MA SOT143R Original PDF 9
    BF909R
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF 323.12KB 12
    BF909R
    		Philips Semiconductors N-Channel Dual Gate MOS-FET Original PDF 117.82KB 11
    BF909R
    		Philips Semiconductors N-channel dual gate MOS-FETs Scan PDF 274.14KB 9
    BF909R,215
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF 323.12KB 12
    BF909R,235
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF 323.12KB 12
    BF909T/R
    		NXP Semiconductors N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF 323.12KB 12
    BF909TR
    		Philips Semiconductors N-channel dual gate MOS-FET Original PDF 117.82KB 11
    BF909WR
    		NXP Semiconductors BF909WR - N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS Original PDF 151.55KB 13
    BF909WR
    		Philips Semiconductors N-Channel Dual-Gate MOS-FET Original PDF 132.48KB 12
    BF909WR,115
    		NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF 132.47KB 12
    BF909WR,115
    		NXP Semiconductors BF909 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal Original PDF 151.55KB 13
    BF909WR,135
    		NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF 132.47KB 12