BF98 Search Results

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

BF980

Abstract: BF980A
Contextual Info: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

BF989

Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by

BF982

Abstract: Transistor BF982
Contextual Info: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back

Contextual Info: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988

BF989

Abstract: 62702-F969
Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 989 For am plifier and m ixer stages in UHF and VHF TV tuners Low input and o u tp u t capacitance Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF989 MA Q62702-F874

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

PCF8548

Abstract: cof lcd BF9864A BF986
Contextual Info: BO LYMIN BF9864A Feature 1. FSTN Transflective LCD, COF package 2. Built-in driver PCF8548, serial I2C data bus 3. 1/64 duty cycle 4. +3V power supply 5. With FPC and ZIF connector Unit mm mm mm mm Pin Assignment Pin Symbol Function LCD power supply 1 Vlcd

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

BF988

Abstract: BF988A BF988B 4584 applications
Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range

Contextual Info: N AMER PHILIPS/DISCRETE DbE D h b S a ^ l 001ETA2 3 A BF980 T- SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f. applications, such as u.h.f. television tuners, with 12 V supply voltage.

Contextual Info: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.

BF988A

Abstract: bf988 BF988B
Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

TO50 package

Abstract: BF988 BF988A BF988B
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance

BF981

Abstract: bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981
Contextual Info: BF981 J v _ _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fietd-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi­

BF981

Abstract: bf981 TRANSISTOR sot103
Contextual Info: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni­

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range

dual-gate

Contextual Info: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package

bf982

Abstract: dual-gate Transistor BF982
Contextual Info: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF982 APPLICATIONS • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. d DESCRIPTION Depletion type field-effect transistor in a plastic X-package

BF982

Contextual Info: BF982 _ / v_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage.

BF989

Abstract: SS MARKING CODE mosfet marking code gg
Contextual Info: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television

BF988

Abstract: LTA 703 S BF988A
Contextual Info: Tem ic BF988 Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Electrostatic sensitive device. Observe precautions for handling jk Input and mixer stages of VHF- and UHF-tuners. Features • • • • Integrated gate protection diodes

BF980

Abstract: BF980A SOT-103 transistor SOT103 mosfet
Contextual Info: Tlioaab C0b7547 ITS M P H I N BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r UHF applications, such as UHF television tuners, w ith 12 V supply voltage and professional

Contextual Info: BF989 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.460