diagram Converter 24V to 12V
Abstract: 24v to 12v converter CIRCUIT DIAGRAM BFP24-24S2R5D 60-watt dc-dc converter 12 to 24v dc-dc converter 24 to 24v BFP24-05S24D converter 24V to 5v 24v to 5v dc-dc dc-dc converter 24 to 5v
Text: BELLNIX High Reliability, 24V Input, Isolated Type DC-DC Converter High Reliability Converter Usable in Natural Convection! 60 Watt BFP Series 120 Watt BFP Series RoHS Parallel Operation Compliance Possible High Reliability DC-DC Converter/BFP 60Watt, 120Watt Series
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60Watt,
120Watt
BFP24-05S12D
BFP24-12S05D
BFP24-15S04D
BFP24-24S2R5D
60Watt
diagram Converter 24V to 12V
24v to 12v converter CIRCUIT DIAGRAM
BFP24-24S2R5D
60-watt
dc-dc converter 12 to 24v
dc-dc converter 24 to 24v
BFP24-05S24D
converter 24V to 5v
24v to 5v dc-dc
dc-dc converter 24 to 5v
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diagram Converter 24v to 12v
Abstract: BFP24-24S2R5D BFP24-12S05D BFP24-05S12D BFP24 BFP24-05S24D BFP24-03S20D 15 WATT 24V TO 15V ISOLATED DC-DC CONVERTER
Text: High Reliability, 24V Input, Isolated Type DC-DC Converter High Reliability Converter Usable in Natural Convection! 60 Watt BFP Series 120 Watt BFP Series RoHS Parallel Operation Compliance Possible High Reliability, 24V Input, Isolated Type DC-DC Converter
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BFP24-05S12D
BFP24-12S05D
BFP24-15S04D
BFP24-24S2R5D
AC500V
60Watt
120Watt
5V470
BDD2008
diagram Converter 24v to 12v
BFP24-24S2R5D
BFP24
BFP24-05S24D
BFP24-03S20D
15 WATT 24V TO 15V ISOLATED DC-DC CONVERTER
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BFP67
Abstract: BFP67R
Text: BFP 67 / BFP 67 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features
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BFP67
BFP67R
D-74025
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Untitled
Abstract: No abstract text available
Text: BFP 136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems 4 fT = 5.5GHz Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration
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VPS05605
OT-343
900MHz
Oct-12-1999
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delta hmi
Abstract: hmi 1200 power cable fault locator NCS 1704-Y15R ABB EH 250 SUBSTATION CONTROL SYSTEM 60870 RTXP 18
Text: %UHDNHU SURWHFWLRQ WHUPLQDO ZLWK DXWRPDWLF UHFORVLQJ DQG V\QFKURFKHFN HDWXUHV • Current - Breaker failure protection BFP) • Secondary system supervision - Fuse failure supervision (FUSE) • Control - Synchrocheck (SYN) - Automatic reclosing function (AR)
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009-BEN
112-BEN
SE-721
096-BEN
delta hmi
hmi 1200
power cable fault locator
NCS 1704-Y15R
ABB EH 250
SUBSTATION CONTROL SYSTEM
60870
RTXP 18
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Block Floating Point Implementation
Abstract: tms320c54x floating point processor a 69258 specifications block diagram of of TMS320C54X radix-4 DIT FFT C code 0C72 SPRA610 n5 st pt 2245 ym 238
Text: Application Report SPRA610 - December 1999 A Block Floating Point Implementation on the TMS320C54x DSP Arun Chhabra and Ramesh Iyer Digital Signal Processing Solutions ABSTRACT Block floating-point BFP implementation provides an innovative method of floating-point
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SPRA610
TMS320C54x
Block Floating Point Implementation
tms320c54x floating point processor
a 69258 specifications
block diagram of of TMS320C54X
radix-4 DIT FFT C code
0C72
n5 st
pt 2245
ym 238
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telefunken IC
Abstract: BFP280
Text: BFP 280 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features
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D-74025
telefunken IC
BFP280
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: Q62702-F1575 marking 17 sot343
Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-343
Q62702-F1575
900MHz
Jan-20-1997
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1575
marking 17 sot343
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CR7006
Abstract: MIL-M-81531 CR7001-000 CR7008-000 CR7012-000 CR7014-000
Text: Introducing BFP Bubble-free Polyester Label TE Connectivity TE has developed bubble-free polyester labels, which support clear identification and readability of instructional labels. These industrial high-tack, permanent adhesive labels have unique micro-channels to allow entrapped gas from
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ENV00
CR7023-000
CR7024-000
CR7025-000
CR7026-000
CR7027-000
BFP-064064-25-9
CR7006
MIL-M-81531
CR7001-000
CR7008-000
CR7012-000
CR7014-000
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telefunken transistor
Abstract: No abstract text available
Text: BFP 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and high-gain broadband amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Low power applications
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D-74025
telefunken transistor
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Q62702-F1318
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFP 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1318
OT-143
Q62702-F1318
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Q62702-F1319
Abstract: tp 806
Text: NPN Silicon RF Transistor BFP 183 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1319
OT-143
Q62702-F1319
tp 806
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BFP92A
Abstract: No abstract text available
Text: BFP 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V
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D-74025
BFP92A
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Untitled
Abstract: No abstract text available
Text: BFP 181 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 2 3 1 4 94 9279 Marking: 18 Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
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D-74025
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ac 0624 transistor 17-33
Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Text: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1282
OT-143
ac 0624 transistor 17-33
transistor bfp 196
Q62702-F1282
0676 marking
BFP193RCs
0166 415 04 1 060
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Untitled
Abstract: No abstract text available
Text: BFP 93 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
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D-74025
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RTXP 24
Abstract: hmi 1200 rtxp24 NCS 1704-Y15R
Text: %UHDNHU WHUPLQDO IRU EUHDNHU FRQILJXUDWLRQ 5 % & 1MRK 505 097-BEN Page 1 Revision: Issued: March 2003 Data subject to change without notice HDWXUHV • Current - Breaker failure protection (BFP) • Power system supervision - LED indication function (HL, HLED)
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097-BEN
025-UEN
026-UEN
027-UEN
091-UEN
009-BEN
112-BEN
SE-721
RTXP 24
hmi 1200
rtxp24
NCS 1704-Y15R
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05605
Q62702-F1818
OT-343
50Ohm
-j100
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • ^ = 5.5GHz • Gold metalization for high reliability BFP 136W PAs Q62702-F1575 1 =E N> I! O ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1575
OT-343
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration
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OCR Scan
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Q62702-F1575
OT-343
fi235bDS
900MHz
fl235b05
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transistor rf cm 1104
Abstract: SL 1424 11p
Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OT-143
transistor rf cm 1104
SL 1424 11p
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OCR Scan
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PDF
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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Untitled
Abstract: No abstract text available
Text: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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PDF
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Q62702-F1818
OT-343
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TEA 1091
Abstract: DIODE bfp 86 siemens rs 1091
Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1591
OT-343
IS21I2
235LG5
E35bD5
01EEQQ0
TEA 1091
DIODE bfp 86
siemens rs 1091
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