BFP 86 Search Results

diagram Converter 24V to 12V

Abstract: 24v to 12v converter CIRCUIT DIAGRAM BFP24-24S2R5D 60-watt dc-dc converter 12 to 24v dc-dc converter 24 to 24v BFP24-05S24D converter 24V to 5v 24v to 5v dc-dc dc-dc converter 24 to 5v
Contextual Info: BELLNIX High Reliability, 24V Input, Isolated Type DC-DC Converter High Reliability Converter Usable in Natural Convection! 60 Watt BFP Series 120 Watt BFP Series RoHS Parallel Operation Compliance Possible High Reliability DC-DC Converter/BFP 60Watt, 120Watt Series

diagram Converter 24v to 12v

Abstract: BFP24-24S2R5D BFP24-12S05D BFP24-05S12D BFP24 BFP24-05S24D BFP24-03S20D 15 WATT 24V TO 15V ISOLATED DC-DC CONVERTER
Contextual Info: High Reliability, 24V Input, Isolated Type DC-DC Converter High Reliability Converter Usable in Natural Convection! 60 Watt BFP Series 120 Watt BFP Series RoHS Parallel Operation Compliance Possible High Reliability, 24V Input, Isolated Type DC-DC Converter

BFP67

Abstract: BFP67R
Contextual Info: BFP 67 / BFP 67 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

Contextual Info: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • ^ = 5.5GHz • Gold metalization for high reliability BFP 136W PAs Q62702-F1575 1 =E N> I! O ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP 136W NPN Silicon RF Transistor 3
For power amplifier in DECT and PCN systems 4
fT = 5.5GHz
Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration

delta hmi

Abstract: hmi 1200 power cable fault locator NCS 1704-Y15R ABB EH 250 SUBSTATION CONTROL SYSTEM 60870 RTXP 18
Contextual Info: %UHDNHU SURWHFWLRQ WHUPLQDO ZLWK DXWRPDWLF UHFORVLQJ DQG V\QFKURFKHFN HDWXUHV • Current - Breaker failure protection BFP) • Secondary system supervision - Fuse failure supervision (FUSE) • Control - Synchrocheck (SYN) - Automatic reclosing function (AR)

Block Floating Point Implementation

Abstract: tms320c54x floating point processor a 69258 specifications block diagram of of TMS320C54X radix-4 DIT FFT C code 0C72 SPRA610 n5 st pt 2245 ym 238
Contextual Info: Application Report SPRA610 - December 1999 A Block Floating Point Implementation on the TMS320C54x DSP Arun Chhabra and Ramesh Iyer Digital Signal Processing Solutions ABSTRACT Block floating-point BFP implementation provides an innovative method of floating-point

Contextual Info: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration

telefunken IC

Abstract: BFP280
Contextual Info: BFP 280 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: Q62702-F1575 marking 17 sot343
Contextual Info: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

CR7006

Abstract: MIL-M-81531 CR7001-000 CR7008-000 CR7012-000 CR7014-000
Contextual Info: Introducing BFP Bubble-free Polyester Label TE Connectivity TE has developed bubble-free polyester labels, which support clear identification and readability of instructional labels. These industrial high-tack, permanent adhesive labels have unique micro-channels to allow entrapped gas from

telefunken transistor

Contextual Info: BFP 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and high-gain broadband amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Low power applications

transistor rf cm 1104

Abstract: SL 1424 11p
Contextual Info: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Q62702-F1318

Contextual Info: NPN Silicon RF Transistor BFP 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFP92A

Contextual Info: BFP 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V

ac 0624 transistor 17-33

Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

Contextual Info: BFP 181 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 2 3 1 4 94 9279 Marking: 18 Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

274 231

Abstract: 955 539 ic
Contextual Info: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143

ac 0624 transistor 17-33

Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Contextual Info: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: BFP 93 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter

Contextual Info: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

RTXP 24

Abstract: hmi 1200 rtxp24 NCS 1704-Y15R
Contextual Info: %UHDNHU WHUPLQDO IRU   EUHDNHU FRQILJXUDWLRQ 5 % &  1MRK 505 097-BEN Page 1 Revision: Issued: March 2003 Data subject to change without notice HDWXUHV • Current - Breaker failure protection (BFP) • Power system supervision - LED indication function (HL, HLED)

TEA 1091

Abstract: DIODE bfp 86 siemens rs 1091
Contextual Info: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

Contextual Info: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!