BFP420 Search Results

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

C547* transistor

Abstract: BFP420 R3150 A04 RF amplifier RF TRANSISTOR BFP420 application note SIEMENS BFP420 BCR400W SOT343 C5
Contextual Info: Application Note No. 015 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimised for minimum Noise Figure at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at

AMS 3630

Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Contextual Info: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability

BFP420 application notes

Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BFP420 application notes 900MHz

Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
Contextual Info: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe

A01 MMIC

Abstract: siemens inductor SIEMENS CAPACITOR C5 mmic a01 "Downconverting to 116 MHz" Siemens capacitor 0402 CAPACITOR SIEMENS BFP420 SIEMENS filter resistor 470ohm
Contextual Info: Application Note No. 054 Discrete & RF Semiconductors 869 - 894 MHz Receiver Front End Downconverting to 116 MHz Receiver Front End for 869 MHz to 894 MHz downconverting to 116 MHz including a Low Noise Amplifier with Gainstep and a Mixer with LO Buffer. The LNA stage, a BFP420, can be switched to high and low gain mode by changing the level

TRANSISTOR MARKING YB

Abstract: BFP420F MARKING 1G TRANSISTOR
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

C547* transistor

Abstract: BFP420 application note transistor C4 016 RF TRANSISTOR BCR400W SOT343 C5 C547u BFP420 C322pF transistor bfp420
Contextual Info: Application Note No. 016 Discrete & RF Semiconductors K. Brenndörfer Low-Noise-Amplifier optimized for input and output return loss at 1.9 GHz using BFP420 This application note provides general information, print layout and list of used components, circuit layout and measured data of a low noise amplifier at

BFP420 application notes

Abstract: INFINEON BFP420 (Ams) INFINEON BFP420 Ams BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

INFINEON BFP420 Ams

Abstract: BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP420 application notes

Abstract: Transistor BFP420 BFP420
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP420

Contextual Info: BFP420 Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers 3 • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz 2 4 Outstanding G ms = 21 dB at 1.8 GHz 1 • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free RoHS compliant and halogen-free package

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

marking ams

Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BFP420 application notes 900MHz

Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
Contextual Info: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a

INFINEON BFP420 Ams

Abstract: BFP420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP420F

Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

transistor bfp420

Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor
Contextual Info: SIEGET
25 BFP420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BCR400

Abstract: BFP420 BFP420 application note SIEMENS BFP420
Contextual Info: Application Note No. 017 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3outperformance at 1.9 GHz using BFP420 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP420. The design emphasis has been on achieving high output

diode t25 4 G9

Abstract: diode t25 4 g8 diode t25 4 c5 diode t25 4 g0 TRANSISTOR G13 diode t25 4 c4 BFP420 diode t25 4 c6 filter saw Siemens matsua siemens matsushita saw 45
Contextual Info: Siemens Matsushita Components Application Note Using the B4204 PCN 2in1 Filter with a LNA based on the BFP420 RF Transistor Horst Germann S+M OFW E MF October 30, 1998 Munich, Germany Reg.-No.: MFAPP03A Siemens Matsushita Components SAW Components Application: Using B4204 with a LNA based on BFP420

2N2222A-PL

Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A