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Infineon Technologies AG BFR-181T-E6327 RF TRANS NPN 12V 8GHZ SC75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR-181T-E6327	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.12282	Buy Now
Infineon Technologies AG BFR181T E6327
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFR181T E6327		1,724			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	BFR181T E6327		1,379			1 $0.924 10 $0.924 100 $0.4158 1000 $0.2772 10000 $0.2772	Buy Now
Vishay Semiconductors BFR181TGS08 Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BFR181TGS08		15,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFR181T Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
BFR181T	Infineon Technologies	NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package	Original	PDF
BFR181T	Vishay Telefunken	Silicon NPN Planar RF Transistor	Original	PDF
BFR 181T E6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75	Original	PDF
BFR181TE6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75	Original	PDF
BFR181TE6327	Infineon Technologies	TRANS GP BJT NPN 12V 0.02A 3SC-75 T/R	Original	PDF
BFR181TF	Vishay Siliconix	Transistors, RF & AF	Original	PDF
BFR181TF	Vishay Telefunken	Silicon Npn Planar Rf Transistor	Original	PDF
BFR181TW	Vishay Telefunken	Silicon NPN Planar RF Transistor	Original	PDF
BFR181TW-GS08	Vishay	TRANS GP BJT NPN 10V 0.02A 3SOT-323 T/R	Original	PDF

BFR181T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BCR108T Abstract: BFR181T SC75 Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR181T BCR108T BFR181T SC75
BFR181T Abstract: SC75 Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR181T VPS05996 900MHz Aug-09-2001 BFR181T SC75
Untitled Abstract: No abstract text available Text: BFR181T / BFR181TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 2 1 Mechanical Data	Original	PDF	BFR181T BFR181TW OT-23 BFR181TW OT-323 D-74025 30-Aug-04
BFR181T Abstract: BFR181TW Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure	Original	PDF	BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99
BFR181TF Abstract: No abstract text available Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR181TF OT-490 OT-490 08-Apr-05 BFR181TF
BFR181T Abstract: Telefunken Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain	Original	PDF	BFR181T D-74025 17-Apr-96 BFR181T Telefunken
BFR181TW Abstract: Telefunken Text: BFR181TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain	Original	PDF	BFR181TW D-74025 11-Oct-96 BFR181TW Telefunken
Untitled Abstract: No abstract text available Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR181T VPS05996
BFR181T Abstract: BFR181TW Text: BFR181T/BFR181TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure	Original	PDF	BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99
Untitled Abstract: No abstract text available Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR181T
Untitled Abstract: No abstract text available Text: BFR181T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR181T VPS05996
BFR181T Abstract: BFR181TW Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure	Original	PDF	BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99
telefunken Abstract: BFR181T Text: BFR181T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure D High power gain	Original	PDF	BFR181T D-74025 17-Apr-96 telefunken BFR181T
BFR181TF Abstract: No abstract text available Text: BFR181TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR181TF OT-490 OT-490 D-74025 30-Aug-04 BFR181TF

Untitled Abstract: No abstract text available Text: BFR181TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR181TF OT-490 D-74025 28-Apr-05
Untitled Abstract: No abstract text available Text: BFR181T / BFR181TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at	Original	PDF	BFR181T BFR181TW 2002/95/EC 2002/96/EC OT-23 BFR181TW OT-323 D-74025 28-Apr-05
Untitled Abstract: No abstract text available Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure	Original	PDF	BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99
BFR181TF Abstract: No abstract text available Text: BFR181TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous	Original	PDF	BFR181TF OT490 OT490 D-74025 23-Sep-02 BFR181TF
smd code book Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ	Original	PDF	OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	PDF	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	PDF	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
NPN planar RF transistor Abstract: No abstract text available Text: Tem ic BFR181T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features	OCR Scan	PDF	BFR181T 17-Apr-96 NPN planar RF transistor
Untitled Abstract: No abstract text available Text: _ BFR181T/BFR181TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 0.5 m A to 12 mA.	OCR Scan	PDF	BFR181T/BFR181TW 181TW D-74025 20-Jan-99
s525 Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52	OCR Scan	PDF	BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T

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BFR181T Search Results

BFR181T Price and Stock

Infineon Technologies AG BFR-181T-E6327

Infineon Technologies AG BFR181T E6327

Vishay Semiconductors BFR181TGS08

BFR181T Datasheets (9)

BFR181T Datasheets Context Search

BCR108T

BFR181T

Untitled

BFR181T

BFR181TF

BFR181T

BFR181TW

Untitled

BFR181T

Untitled

Untitled

BFR181T

telefunken

BFR181TF

Untitled

Untitled

Untitled

BFR181TF

smd code book

TCA780

BFG591 amplifier

NPN planar RF transistor

Untitled

s525