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    BFR360 Price and Stock

    Infineon Technologies AG BFR360L3E6765XTMA1

    RF TRANS NPN 9V 14GHZ TSLP-3-1
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    DigiKey BFR360L3E6765XTMA1 Cut Tape 29,175 1
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    BFR360L3E6765XTMA1 Digi-Reel 29,175 1
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    BFR360L3E6765XTMA1 Reel 15,000 15,000
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    Infineon Technologies AG BFR360FH6327XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    DigiKey BFR360FH6327XTSA1 Cut Tape 22,490 1
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    BFR360FH6327XTSA1 Digi-Reel 22,490 1
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    BFR360FH6327XTSA1 Reel 18,000 3,000
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    Mouser Electronics BFR360FH6327XTSA1 17,931
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    Rochester Electronics BFR360FH6327XTSA1 3,115 1
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    Infineon Technologies AG BFR360FH6765XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    DigiKey BFR360FH6765XTSA1 Digi-Reel 7,714 1
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    BFR360FH6765XTSA1 Cut Tape 7,714 1
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    BFR360FH6765XTSA1 Reel 3,000 3,000
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    Verical BFR360FH6765XTSA1 150,000 6,000
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    BFR360FH6765XTSA1 9,000 4,755
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    BFR360FH6765XTSA1 3,540 1
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    Infineon Technologies AG BFR-360F-E6765

    RF TRANS NPN 9V 14GHZ TSFP-3
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    DigiKey BFR-360F-E6765 Digi-Reel 1
    • 1 $0.25
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    BFR-360F-E6765 Cut Tape 1
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    BFR-360F-E6765 Reel 6,000
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    Infineon Technologies AG BFR-360T-E6327

    RF TRANS NPN 9V 14GHZ SC75
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    DigiKey BFR-360T-E6327 Reel 6,000
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    Find more BFR360 price and stock on Findchips.com

    BFR360 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR360 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR360F Infineon Technologies BFR360F preliminary Original PDF
    BFR360F Infineon Technologies Si RF Transistors, fT < 24 GHz; Package: PG-TSFP-3; VCEO (max): 6.0 V; IC(max): 35.0 mA; Ptot (max): 210.0 mW; fT (typ): 14.0 GHz; F (typ): 1.0 dB; Original PDF
    BFR360F Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR360FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6327 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF
    BFR 360F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6765 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6765 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF
    BFR 360F E6765 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6765 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FH6765XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 6V 35MA TSFP-3 Original PDF
    BFR360FL6765 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF
    BFR360L3 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR 360L3 E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 6V TSLP-3 Original PDF
    BFR360L3E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSLP-3 Original PDF
    BFR360L3E6327 Infineon Technologies TRANS GP BJT NPN 6V 0.035A 3T Original PDF
    BFR360L3E6765 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 6V TSLP-3 Original PDF

    BFR360 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    clapp oscillator

    Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
    Text: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency


    Original     		PDF BFR360F BBY58-02V BFR360F AN061 clapp oscillator bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V bjt oscillator Varactor Diode RF

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 EHA07536 Jul-01-2003 BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original     		PDF BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original     		PDF BFR360F BFR360F AN077

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    IC 7437

    Abstract: BFR360F
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F te20mA Jun-22-2001 -j100 IC 7437 BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3


    Original     		PDF BFS360L6 BFR360L3)

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 Jul-07-2004 BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Apr-14-2003 -j100

    fbs MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-28-2003 fbs MARKING TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F

    BFR360L3

    Abstract: BFR380L3 BFS386L6 tr1150
    Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data  Low voltage/ low current operation 3 5  For low noise amplifiers 2 6  For oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz  Built in 2 Transistors TR1: die as BFR360L3,


    Original     		PDF BFS386L6 BFR360L3, BFR380L3) Jun-11-2003 BFR360L3 BFR380L3 BFS386L6 tr1150

    s parameters 4ghz

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Oct-26-2001 -j100 s parameters 4ghz

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T marking FB

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 15cal

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    transitor RF 98

    Abstract: BFR360F E6327 GMA marking
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F transitor RF 98 BFR360F E6327 GMA marking

    BFR360T

    Abstract: SC75
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jun-16-2003 BFR360T SC75

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360T VPS05996 EHA07524 Jan-29-2002

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360L3 210mA EHA07536 Feb-25-2002

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Aug-22-2001 -j100

    BFR360F

    Abstract: 104GHz transitor RF 98
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR360F Jun-16-2003 -j100 BFR360F 104GHz transitor RF 98