BFT93 Search Results

X3A-BFT93

Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: BFT93W Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MBB262

Abstract: MBB255 MCD089
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

Contextual Info: _ PhMip^em iconductoi^^^ bbSBTBl 0 Q 3 2 2 n 532 B A P X Product specification PNP 5 GHz wideband transistor crystal X3A-BFT93 N AUER PHILIPS/DISCRETE DESCRIPTION b^E » MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

BFR93 application note

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

MARKING CODE 42t

Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Philips FA 564

Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

BFT93

Abstract: BFR93 application note bfr93 MSB003 BFR93A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

TRANSISTOR D 5702

Abstract: OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 BFT93W FC 0137 transistor 1661 equivalent 206 transistor specification sheet
Contextual Info: m □ 0 3 2 2 3 ‘ì 3 2 0 H I A P X N A PIER P H I L I P S / D I S C R E T E bTE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEA TU R E S D ES C R IPTIO N • High power gain Silicon PNP transistor in a plastic, S O T 323 S-mini package. The

684 k 100

Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
Contextual Info: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

X3A-BFT93

Abstract: BFQ23 BFQ24 BFT93 philips bfq23
Contextual Info: _ P h M ip ^ e m ico n d u cto i^ ^ ^ b b S B T B l 0 Q 3 H 2 n 532 B A P X Product specification PNP 5 GHz wideband transistor crystal - X3A-BFT93 N AUER PHILIPS/DISCRETE DESCRIPTION b'iE D MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72)

BV E1 382 1229

Abstract: transistor BF 502
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

TRANSISTOR D 5702

Abstract: BFT93 BFT93W MLB436 transistor BF 697
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

transistor k 911

Contextual Info: PhHip^emiconductore H 711002b QDbTBbl STA M P H I N ^^Produc^pecification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems,

Contextual Info: X3A-BFT93 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)15 I(C) Max. (A)35m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)

BFT93

Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,

TAG 8907

Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93
Contextual Info: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in