BFW GLASS Search Results

TRANSISTOR BFW 11

Abstract: BFW92 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92
Contextual Info: BFW92 NPN Silicon planar RF transistor BFW 92 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41867 fo r use as RF am plifiers up in to the GHz range, e.g. fo r broadband antenna amplifiers. T ype O rd e r n u m b e r BFW 92

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

BFW92

Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,

BFW93

Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Contextual Info: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Contextual Info: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain

Daico Industries da0296

Abstract: DA0296 bfw glass 18DB
Contextual Info: 26E DAICO INDUSTRIES INC BbGMTSD 0QG1541 2 « D A I D T - 7 1 - U - 01 RF IN/OUT DA0296 6 SECTION ATTENUATOR BFW/OUr © 2J> © - PINS 21-37 CONNECTED TO CASE - ^*1^ li J li J <T°"°ÌVIf li (I , Il (I I ^T° I) ll ~ l •40-150 MHz • 30 nSEC SWITCHING SPEED

BFW92

Contextual Info: Temic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F am plifier up to G H z range. Features • High pow er gain • Low noise figure B FW 92 M arking: BFW 92 Plastic case TO 50 1= C ollector; 2= Em itter; 3= Base Absolute Maximum Ratings

TRANSISTOR BFW 16

Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,

BFW 100 transistor

Abstract: bfw92
Contextual Info: BFW92 ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to G H z range. Features • High pow er gain • Low noise figure

Contextual Info: CCFL ● Characteristics Diagrams Lamp voltage - Lamp current 25°C, Ni-cup electrode (319 mm lamp) 180 850 160 800 Lamp voltage V (Vrms) Luminance uniformity (%) Lamp surface luminance - lamp diameter 140 120 100 80 60 40 2.6(2.0)-60T 3.4(2.4)-60T 4.0(3.0)-60T

Contextual Info: BRIDGE RECTIFIER Part numbering system for all parts excluding JEDEC registered, ProElectron and industry standard parts. 1. MINI BRIDGE MBYA-ZZZZ 4. not shown in databook KBPH 7. GBU/KBU ABUXV-ZZB R = Fast Recovery MB = Mini Bridge package style 2 = 200V

Contextual Info: 1 5 0 0 W A T T S U R F A C E M O U N T SMCJ Series Features • I ■ 1500 watt peak pulse power dissipation Available in voltages from 5.0V to 170V Unidirectional and bidirectional ■ ■ ■ Glass passivated junction Low clamping factor Each device 100% surge tested

Contextual Info: 1.5SMCJ5.0-LF THRU 1.5SMCJ188A-LF 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES z PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 z GLASS PASSIVATED JUNCTION z LOW PROFILE z EXCELLENT CLAMPING CAPABILITY z LOW INCREMENTAL SURGE RESISTANCE

BEZ DIODES

Abstract: marking GFQ marking Bdy
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

Contextual Info: SMCJ5.0 - SMCJ170CA 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time

GEZ DIODES

Abstract: GEZ 63 DIODES GEZ 304 DIODES
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

GEZ DIODES

Abstract: bgy 44
Contextual Info: TVS DIODES 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor

Contextual Info: SMCJ5.0 - SMCJ170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCORPORATED Features • • • • • • 1500 W atts Peak Pulse Pow er Dissipation 5.0 - 1 7 0 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability

GEZ DIODES

Abstract: GHR TVS GEZ 304 DIODES marking GFQ marking BGG tvs
Contextual Info: TVS Diodes 1.5SMCJ Series — 1500 Watt Surface Mount 1.5SMCJ Series Features • RoHS Compliance designated by suffix “F” • 1500 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction

SMCJ GFR

Abstract: SMCJ9.0 marking Bdy marking code bdy SMCJ
Contextual Info: SMCJ5.0 -SMCJ170CA VISHAY 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR / l Ï t e m Î t I POWER SEHCONNJCTOR/ Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

BJG 36

Contextual Info: SMCJ5.0 thru SMCJ440CA Pb Free Plating Product Pb SMCJ5.0 thru SMCJ440CA 1500W Surface Mount Transient Voltage Suppressors SMC/DO-214AB Mechanical Characteristics z CASE: Void-free, JEDEC DO-214AB Molded Plastic over glass passivated junction. .245 6.22

SMCJ GFR

Abstract: smcj bfk marking code BGL bfw glass marking code BFK SMCJ12 vishay smcj smcj 214 ghk SMCJ10 SMCJ11
Contextual Info: SMCJ5.0 - SMCJ170CA VISHAY 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR LITEMZI y POWER SEMICONDUCTOR Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

1.5SMCJ90

Abstract: bes 960 GEK 56
Contextual Info: 1.5SMCJ5.0 THRU FRONTIER ELECTRONICS CO., LTD. 1.5SMCJ170CA 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR FEATURES ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! GLASS PASSIVATED JUNCTION ! LOW PROFILE ! EXCELLENT CLAMPING CAPABILITY

smcj 214 ghk

Abstract: BEM 45 BFW 100A marking code bdu bdx 338 SMCJ GFR GEK DIODES bfw glass tc 137/10 SMCJ11
Contextual Info: II,MCP SMCJ5.0 - SMCJ170CA SERIES W IU SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCO RPO RATED Features 1500 W atts Peak Pulse Pow er Dissipation 5.0 - 170 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability Fast Response Tim e