BG3130 |
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Infineon Technologies
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DUAL N-Channel MOSFET Tetrode |
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PDF
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BG3130 |
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Infineon Technologies
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Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 33.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; |
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Original |
PDF
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BG3130E6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 |
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Original |
PDF
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BG3130E6327 |
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Infineon Technologies
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TRANS MOSFET N-CH 8V 0.025A 6SOT-363 T/R |
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Original |
PDF
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BG3130E6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 |
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Original |
PDF
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BG3130H6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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BG3130H6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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BG3130R |
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Infineon Technologies
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DUAL N-Channel MOSFET Tetrode |
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Original |
PDF
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BG3130R |
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Infineon Technologies
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Dual Semi Biased; Package: PG-SOT363-6; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 33.0 mS; Gp (typ): 24.0 dB; F (typ): 1.3 dB; |
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Original |
PDF
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BG3130RE6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V SOT-363 |
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Original |
PDF
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BG3130RE6327 |
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Infineon Technologies
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TRANS MOSFET N-CH 8V 0.025A 6SOT-363 T/R |
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Original |
PDF
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BG3130RE6327BTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V SOT-363 |
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Original |
PDF
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BG3130RH6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
|
BG3130RH6327XTSA1 |
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Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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