BGA 100 PACKAGE FOOTPRINT Search Results
BGA 100 PACKAGE FOOTPRINT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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BGA 100 PACKAGE FOOTPRINT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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WMP100
Abstract: sim 300 processor gsm modem datasheet sim 300 processor datasheet for gsm modem wavecom WMP100 sim 300 processor gsm modem wavecom wmp50 sim 300 processor gsm modem for project wavecom WMP150 WMP150 sim 300 processor for gsm modem
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WMP50 WMP100 sim 300 processor gsm modem datasheet sim 300 processor datasheet for gsm modem wavecom WMP100 sim 300 processor gsm modem wavecom wmp50 sim 300 processor gsm modem for project wavecom WMP150 WMP150 sim 300 processor for gsm modem | |
Contextual Info: Table of Contents Table of Contents BGA Socketing Systems Designed for use with Ball Grid Array BGA , Land Grid Array (LGA), and Chip Scale Package (CSP) devices in development, test and production applications. Over 900 footprints available online in our searchable BGA Socket Finder database at www.bgasockets.com. |
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CAT16-PREVIEW06 | |
B4C1Contextual Info: Rev 3; 5/06 DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Features 27mm2 ♦ Single-Piece, Reflowable, PBGA Package Footprint ♦ Internal ML Battery and Charger ♦ Unconditionally Write-Protects SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when |
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DS2030Y/AB 256kb DS2030 256-ball DS2030 B4C1 | |
Contextual Info: Rev 3; 5/06 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features 27mm2 ♦ Single-Piece, Reflowable, PBGA Package Footprint ♦ Internal ML Battery and Charger ♦ Unconditionally Write-Protects SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when |
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DS2045Y/AB DS2045 256-ball DS2045 | |
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF |
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B048K096T24 02/04/10M | |
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF |
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B048K120T20 02/04/10M | |
Solder Paste, Indium 5.8
Abstract: SOT996-2 VSSOP8 MICROPAK XX SOT103 WLCSP stencil design J-STD-020D SOT996 sot1049 XQFN10U
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AN10343 Solder Paste, Indium 5.8 SOT996-2 VSSOP8 MICROPAK XX SOT103 WLCSP stencil design J-STD-020D SOT996 sot1049 XQFN10U | |
Contextual Info: AT91SAM ARM-based Embedded MPU SAM9G25 SUMMARY DATASHEET Description Based on the ARM926EJ-S core, the SAM9G25 is an embedded microprocessor unit, running at 400 MHz and featuring connectivity peripherals, a high data bandwidth architecture and a small footprint package option, making it an optimized solution for |
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AT91SAM SAM9G25 ARM926EJ-Sâ SAM9G25 12-bit | |
XC2V1000 Pin-out
Abstract: FG256 FF1152 xc2v1000 XC2V8000 XC2V80 XC2V10000 BF957
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FF896 FF1152 XC2V1000 Pin-out FG256 xc2v1000 XC2V8000 XC2V80 XC2V10000 BF957 | |
DS2045AB
Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 W16 PLC
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DS2045Y/AB DS2045 256-ball The045Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 W16 PLC | |
DS2045AB
Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 rechargeable battery
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DS2045Y/AB DS2045 256-ball The45Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 rechargeable battery | |
Contextual Info: Rev 2; 1/05 DS2045Y/AB Single-Piece 1Mb Nonvolatile SRAM Features The DS2045 is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. |
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DS2045Y/AB DS2045 256-ball T45Y/AB | |
CP56
Abstract: CS48 DS012 PC44 VQ100 VQ44 XCR3064XL K854
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DS017 XCR3064XL 64-macrocell 44-pin 48-ball 56-ball pinsVQ100 100-pin CP56 CS48 DS012 PC44 VQ100 VQ44 K854 | |
XCR3064XL
Abstract: CP56 CS48 DS012 TQ100 VQ100 VQ44 H644 cpld table k429d
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DS017 XCR3064XL 64-macrocell 48-ball 56-ball 44-pin 100-pin VQ100: CP56 CS48 DS012 TQ100 VQ100 VQ44 H644 cpld table k429d | |
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JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE ANDContextual Info: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF |
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B048K480T30 P/N27688 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND | |
14bcmContextual Info: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF |
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B048K096T24 07/04/10M 14bcm | |
DS2045AB
Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70
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DS2045Y/AB DS2045 256-ball DS2045Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 | |
smd RO25Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF |
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B048K120T20 06/04/10M smd RO25 | |
B048K120T20
Abstract: JESD22-A-103A JESD22-A-104B SR-332
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B048K120T20 07/04/10M B048K120T20 JESD22-A-103A JESD22-A-104B SR-332 | |
Contextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF |
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B048K480T30 P/N27688 08/04/10M | |
transistor marking JBContextual Info: BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF |
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B048K096T24 07/04/10M transistor marking JB | |
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: JESD22-A-108-B B048K120T20
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B048K120T20 07/04/10M JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND JESD22-A-108-B B048K120T20 | |
JESD22-B-104-A
Abstract: J-STD-029 SMD TRANSISTOR MARKING 2.x
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B048K096T24 06/04/10M JESD22-B-104-A J-STD-029 SMD TRANSISTOR MARKING 2.x | |
footprint jedec MS-026 TQFP
Abstract: PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas
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G46-88 footprint jedec MS-026 TQFP PL84 tube AS 108-120 x-ray tube datasheet 144 QFP body size drawing of a geometrical isometric sheet superior Natural gas engines x-ray tube datasheet 026 SMT, FPGA FINE PITCH BGA 456 BALL mo-047 texas |