BGA 48 "8 X 8" MEMORY Search Results

DIN 13715

Abstract: 12197-507-XTD AMIS41683CANN1G N08L6182AB27I FS7145-02G-XTD valve positioners 11640-843-XTP vending machine fuji SEOUL 5630 LED DATASHEET 19699-002-XTP
Contextual Info: Ultra-Low Power SRAMs Density Mb Organization Voltage Range Speed (ns) Features Package N08L6182A Part Number 8 512 Kb x 16 1.65 - 2.2 70 Dual CE 48-BGA N08L63W2A 8 512 Kb x 16 2.3 - 3.6 70 Dual CE 48-BGA N04L63W2A 4 256 Kb x 16 2.3 - 3.6 55 Dual CE 44-TSOP2, 48-BGA

CS16LV20483

Contextual Info: High Speed Super Low Power SRAM 128k Word x 16 bit CS16LV20483 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Jan.20,2005 2.1 Remove 48PIN TSOP I /48PIN BGA(6*7mm) Jun.12,2006 2.2 Remove 48 Mini BGA 6*8 mm package type

Zn107

Contextual Info: .Advance information Features • Easy m em ory expansion w ith CE1, CE2, OE inputs • Intelliwatt active pow er reduction circuitry • 2.3V to 3.0V operating range JESD 8 -5 • JEDEC registered packaging - 3 2 -pin TSOP package - 48-ball 8m m x 6m m CSP BGA

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

HN58V1001TI-25E

Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
Contextual Info: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,

IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Contextual Info: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are

Contextual Info: ISSI IS61LV10008 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

Migration Guide for Intel StrataFlash Memory J

Abstract: Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3
Contextual Info: PRODUCT SELECTION MATRIX P Intel 1.8V Wireless Flash W18/W30 R O D Intel StrataFlash® Memory (J3) U C T S Synchronous Intel StrataFlash® Memory (K3/K18) Advanced+ Boot Block (C3) X8 Organization X16 8 Mb 16 Mb 32 Mb Density 64 Mb 128 Mb 256 Mb Burst

Contextual Info: ISSI IS61LV10008 1M x 8 HIGH-SPEED CMOS STATIC RAM ADVANCED INFORMATION FEBRUARY 2002 FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

eeprom flash

Abstract: PUMA84SV64000 BGA 48 "8 x 8" memory flash 32 Pin PLCC 16mbit PUMA84SV32000 PUMA84
Contextual Info: Part Numbering MSM 8 V 512 B B L I - 85 1. 2. 3. 4. 1. 9 8. 7. 6 5. TECHNOLOGY 6. BGA The memory technology is represented by a single character:S D SD Static RAM Dynamic RAM SYNCH DRAM 2. DATA WIDTH Bits 3. V CC VOLTAGE E F EEPROM FLASH Power 7. Blank Standard

IS61LV10248

Abstract: IS61LV10248-10B IS61LV10248-10M IS61LV10248-10T IS61LV10248-12T IS61LV10248-8B IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T
Contextual Info: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

IS61LV10248

Abstract: IS61LV10248-10MI IS61LV10248-10T IS61LV10248-8B IS61LV10248-8BI IS61LV10248-8M IS61LV10248-8MI IS61LV10248-8T IS61LV10248-8TI IS61LV10248-10BI lead-free
Contextual Info: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

RSDS

Abstract: DDR3 jedec EIA-644 SSTL-15 SSTL-18 1932-pin
Contextual Info: Section II. I/O Interfaces This section provides information on Stratix IV device I/O features, external memory interfaces, and high-speed differential interfaces with DPA. This section includes the following chapters: • Chapter 6, I/O Features in Stratix IV Devices

Contextual Info: ISSI IS61LV10248 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

BS616LV2013

Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2013 „ DESCRIPTION „ FEATURES The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage.

841S101

Contextual Info: Comprehensive Portfolio from the Leader in PCI Express Solutions Integrated DeviceTechnology | | POWER MANAGEMENT ANALOG & RF INTERFACE & CONNECTIVITY | CLOCKS & TIMING | MEMORY & LOGIC | TOUCH & USER INTERFACE | VIDEO & DISPLAY | AUDIO PCI Express Timing Solutions

EP4SGX180

Abstract: EP4SGX360 EP4SGX290 EP4SE230 EP4SE360 EP4SE530 EP4SGX70 1152-pin
Contextual Info: 7. External Memory Interfaces in Stratix IV Devices SIV51007-3.1 This chapter describes external memory interfaces available with the Stratix IV device family and that family’s silicon capability to support external memory interfaces. To support the level of system bandwidth achievable with Altera ®

Contextual Info: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08T1630CxB 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Features Overview The N08T1630CxB is an integrated memory

IS61WV10248EDBLL

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

IS61WV10248EDBLL-10TLI

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

N04T1630C1BTR

Abstract: N04T1630C2BZ TSOP2-44
Contextual Info: N04T1630C1B N04T1630C2B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04T1630C2B is an integrated memory device containing a low power 4 Mbit SRAM built

M25P08

Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Contextual Info: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010

LY62W128

Contextual Info: 第 1 頁，共 3 頁 Page:1/3 Update: May 22,2015 Low Power SRAM Density 64K 256K Configuration 8K x 8 32K × 8 Chip Select Dual CE Control CE#,CE2 Single CE Control (CE#) Power Supply 2.7V~5.5V 2.7V~5.5V 4.5V~5.5V 2.7V~3.6V 128K × 8 Dual CE Control (CE#, CE2)

S25FL129

Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
Contextual Info: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,