BGA60 Search Results

SF-BGA60B-B-11

Contextual Info: Tooling hole X2 Y BGA60B 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout 8.00mm [0.315"] Top View (reference only) 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 1 3.52mm [0.139"] Top View of Land Pattern Scale: 2:1 0.20mm [0.008"] dia.

BGA60C

Abstract: 0.8mm pitch BGA LS-BGA60C-11 BGA-60
Contextual Info: Tooling hole X2 BGA60C 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout Y 7.20mm [0.283"] Top View (reference only) 3.76mm [0.148"] 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 2.17mm [0.086"] 1 0.20mm [0.008"] dia. Top View of Land Pattern

Contextual Info: P-BGA60-0917-L00AZ

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Contextual Info: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

Contextual Info: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

Contextual Info: ESM T M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESM T M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESM T M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )

w27 smd transistor

Abstract: TRANSISTOR SMD nc46 ECQ60 ISL6248ACR CL51 pentium BCM5788 LA-2271 SMD transistor k23 TRANSISTOR SMD K27 Socket AM2
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 ECQ60 Schematics Document Desktop LGA-775 Package with Grantsdale + ICH6 + ATI M24-P 2004-08-09-C 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

KB910Q

Abstract: LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P
Contextual Info: A B C D E 機密 1 1 Compal Confidential HTW00 LA-2871 Schematics Document 2 2 Intel Dothan with 915PM GM /910GML + DDRII + ICH6M (+VGA/B ATi M24C/M26P) 2005-08-22 REV: 1.0 3 3 4 4 2005/08/22 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification

max1532a

Abstract: Compal LA-2781 HDQ70 ATI M26P LA-2781 KB910Q TPS2231 EDL71 Socket AM2 Compal Electronics
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 HQD70/HDQ71 Schematics Document Intel Dothan Processor with 915PM/915GM + DDRII + ICH6M With ATi M26-P 3 3 2005-05-12 REV: 0.2 (For DVT) 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2005/03/01

BGA-60

Abstract: LMX5100 0.18-um CMOS technology 0.18 um CMOS bluetooth transmitter receiver LMX5452 LMX51
Contextual Info: BR4005_LM5452 12/2/03 8:04 AM Page 1 LMX5452: integrated baseband controller and radio National Semiconductor. Powering the wireless world. Bluetooth Bluetooth wireless solutions Introducing the next generation in Bluetooth solutions National’s LMX5452 provides the features and

Contextual Info: ESMT M13L2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition

EM42BM1684LBB

Abstract: EM42BM1684LBB-75F EM42BM1684LBB-75FE
Contextual Info: eorex EM42BM1684LBB Preliminary 512Mb 8Mx4Bank×16 Double DATA RATE SDRAM Features Description • Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. • 1.8V ±0.1V VDD/VDDQ • 1.8V LV-COMS compatible I/O • Burst Length (B/L) of 2, 4, 8, 16

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

Contextual Info: ESMT M53D2561616A 2F Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.

Contextual Info: ESMT M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.

MBM29BS64LF

Abstract: DS05 MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: 富士通半導体デバイス DS05–20916–1 DATA SHEET バーストモードフラッシュメモリ CMOS 64M 4 M x 16 BIT MBM29BS/BT64LF-18/25 • 概要 MBM29BS/BT64LF は , 67,108,864bit の容量で , ＋ 1.8 V 単一電源によるチップ一括消去およびセクタ単位での消去と