BH RF TRANSISTOR Search Results

BH RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BH RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
class D power amplifier 6.78 MHz Abstract: 6.78 mhz crystal oscillator small loop antenna 13.56 13,56MHz ASK receiver IC fsk ENCODER fsk encoder datasheet power amplifier 6.78 MHz RF inductor 13.56 MHz 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM Text: U2741B UHF ASK/FSK Transmitter Description The transmitting frequency range is 300 MHz to 450 MHz. It can be used in both FSK and ASK systems. Gm bH The U2741B is a PLL transmitter IC which has been specially developed for the demands of RF low-cost data transmission systems at data rates up to 20 kBaud.	Original	PDF	U2741B U2741B SSO16 M44C090 M44C890 D-74025 15-Oct-98 class D power amplifier 6.78 MHz 6.78 mhz crystal oscillator small loop antenna 13.56 13,56MHz ASK receiver IC fsk ENCODER fsk encoder datasheet power amplifier 6.78 MHz RF inductor 13.56 MHz 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Untitled Abstract: No abstract text available Text: Qs.iisy <£fLmi-Conciuctoi '[P'loducti., Una. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1324 is a silicon NPN epitaxial planar type transistor designed	Original	PDF	2SC1324 770MHz 770MHz. 500MH2.
MRF284 Abstract: No abstract text available Text: <z/V.e.txr ZPioauati, {Jna. tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Advance Information The RF Sub-Micron MOSFET Line MRF284S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	MRF284S MRF284
modem FSK Abstract: BH rx transistor 11789 ceramic filter 450 kHz MC 13320 audio scrambler U2782B U2796B U3500BM U3501BM Text: U3501BM Cordless Telephone-Signal Processor Description such as IF converter, FM demodulator, RSSI. Several gains and mutes in transmit and receive direction are controlled by a serial bus while compander, pre- and deemphasis and scrambler can be bypassed.	Original	PDF	U3501BM D-74025 06-Mar-98 modem FSK BH rx transistor 11789 ceramic filter 450 kHz MC 13320 audio scrambler U2782B U2796B U3500BM U3501BM
Untitled Abstract: No abstract text available Text: M j J i « RF P m d ucts M ic m m s e m i 140 Commerce Drive Montgomeryville, PA 1893S-1013 Tel: 215 631-9840 SD1483 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLiCATIONS FM CLASS C T R A N S :STOR • * ■ . * * « FREQUENCY VOLTAGE? PO W bHÜU f POWER GAIN	OCR Scan	PDF	1893S-1013 SD1483 SD1483 uF-63V S65/32
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD •	OCR Scan	PDF	MRF148
MCA45T Abstract: capacitor philips ll Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	PDF	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll
ceramic disc capacitor 100nf 104 Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE Text: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve	OCR Scan	PDF	BLV97CE bbS3T31 OT171 ceramic disc capacitor 100nf 104 C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
BFR92ALT1 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistors Designed primarily for use in high-gain, iow-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface mount components.	OCR Scan	PDF	BFR92ALT1 10Vdc b3b72SS
56590653B Abstract: BH Rf transistor Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	PDF	56-590-65/3B MRF492 56590653B BH Rf transistor
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistors Designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin—film circuits using surface mount components.	OCR Scan	PDF	BFR92ALT1 10Vdc,
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW	OCR Scan	PDF	MRF8372 MRF8372R1,
ferroxcube for ferrite beads 56-590-65 Abstract: ferroxcube 56-590-65 vk200-20 VK-200 transistor j201 arco 469 arco 466 MRF454 motorola vk200 ferroxcube for ferrite beads Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts	OCR Scan	PDF	MRF454 1000pF, iF/15 VK200-20/4B, 56-590-65/3B ferroxcube for ferrite beads 56-590-65 ferroxcube 56-590-65 vk200-20 VK-200 transistor j201 arco 469 arco 466 MRF454 motorola vk200 ferroxcube for ferrite beads

MRF327 Abstract: Johanson Piston Trimmer Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band	OCR Scan	PDF	MRF327 80-mil-Thick MRF327 Johanson Piston Trimmer
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description T he 20111 is a c la ss AB, N PN , com m on emitter R F pow er transistor intended for 25 V d c operation from 860 to 900 M H z. Rated at 85 watts minimum output power, it m ay be used for both C W and P E P	OCR Scan	PDF
LT1817 transistor Abstract: LT1817 Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR	OCR Scan	PDF	LT1817 14E1G C01LECT0R-8ASE LT1817 transistor LT1817
germanium transistors PNP Abstract: transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305 Text: PNP Germanium Transistors PIMP Germanium RF A lloy Transistors in T 0 1 and T 0 5 metal cases Characteristics at T amb=25°. M axim um ratings Type Case B VCEO V Bvcso bvebo V V XCM mA mW JJM °C hF E ^ C E / i C V /m A ) pt o t ' h/rf ^ C E ^ Ó (V /m A I	OCR Scan	PDF	NKT139 germanium transistors PNP transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305
MCA443 Abstract: 70cN Text: N AMER bTE D PHILIPS/DISCRETE • bbS 3ci31 D02ôûbE 744 I BLU60/28 UHF POWER TRANSISTOR NPN silico n planar e p ita xia l tran sisto r p rim a rily intended fo r use in radio tran sm itte rs in th e 470 MHz co m m u n ica tio n s band. Features • M ulti-base stru ctu re and e m itte r ballasting resistors fo r an o p tim u m tem perature p ro file	OCR Scan	PDF	bbS3R31 BLU60/28 BLU60/28 OT119) MCA443 70cN
BH Rf transistor Abstract: mrf1150m Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 150 W PEAK. 1 0 2 0 -1 1 5 0 MHz M ICRO W AVE POWER TRAN SISTO R MICROWAVE PULSE POWER TRANSISTOR NPN SILICON . . . designed for Class B and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.	OCR Scan	PDF	1150M MRF1150M BH Rf transistor mrf1150m
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • • Specified 12.5 Volt, 470 M Hz Characteristics —	OCR Scan	PDF	16-Volt MRF644
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1150MA MRF1150MB The RF Line 1SO W PEAK. 960-1215 MHi MICROWAVE PULSE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS NPN S IL IC O N . designed fo r Class 6 and C com m on base a m p lifie r a pplications in short pulse TACAN, IFF, and DME transm itters.	OCR Scan	PDF	MRF1150MA MRF1150MB MRF1150MA,
Untitled Abstract: No abstract text available Text: 2SC1923 SEMICONDUCTOR forward international b u c t r q n k s ltd . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS, FM,RF,M3XJF AMPLIFIER APPLICATIONS. Package: TO-92 * Small Reverse Transfer Capacitance:Cr^=0,7pF TYP,	OCR Scan	PDF	2SC1923 100MHZ) 100uA
BH Rf transistor Abstract: BLS2731-50 Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -50 PINNING SOT422A FEATURES • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness	OCR Scan	PDF	OT422A) BH Rf transistor BLS2731-50

BH RF TRANSISTOR Search Results

BH RF TRANSISTOR Result Highlights (5)

BH RF TRANSISTOR Datasheets Context Search

class D power amplifier 6.78 MHz

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MRF284

modem FSK

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MCA45T

ceramic disc capacitor 100nf 104

BFR92ALT1

56590653B

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ferroxcube for ferrite beads 56-590-65

MRF327

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LT1817 transistor

germanium transistors PNP

MCA443

BH Rf transistor

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BH Rf transistor