BIAS OF GAAS MESFET Search Results

sp8t rf switch

Abstract: HMC241 HMC241QS16 HMC182S14 mesfet lnb HMC165S14 HMC252QS24 HMC253QS24 PLCC28 QSOP16
Contextual Info: MICROWAVE CORPORATION POSITIVE BIAS MULTI-THROW SWITCHES w/INTEGRATED DECODERS FEBRUARY 2001 POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to

296K

Abstract: GaAs MESFET amplifier MESFET Application MAX4473 GaAs MesFET Application note MESFET
Contextual Info: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1800: Dec 04, 2002 Smart IC Maintains Uniform Bias Current For GaAs MESFETs A current sensor that monitors the drain-source current IDS at the source of the MESFET and provides feedback to the gate input overcoming the drawbacks of gateturn-on threshold voltage variations for gallium-arsenide metal-semiconductor fieldeffect transistors, GaAs MESFETs.

Contextual Info: • ESti h b ti^ O G //////// I MA1046-1 DESCRIPTION OUTLINE DRAWING The MA1046-1 is a 1.9 GHz band power amplifier Po = +3.1W , constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal, input and Output impedances are designed to

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

Contextual Info: m u MA1046-1 m OUTLINE DRAWING DESCRIPTION The M A 1046-1 is a 1.9 G H z band p o w e r amplifier Po = +3.1 W , constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and O utput im pedances are designed to

SP8T switch package ghz

Abstract: HMC241
Contextual Info: COVER FEATURE POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to communicate with family, friends and coworkers via the Internet; microwaves via satellites

Contextual Info: 20-24 GHz GaAs Packaged EQAIph MMIC Power Amplifier AA022P1-65 Features Not Connected • Ideal for PCN and Other Digital Radio Applications ■ Hermetic 5 Lead Package ■ Single Bias Supply Operation +6V ■ No External Components Required ■ Broad Coverage of K-Band

Ablebond 84-1*SR4

Contextual Info: 30-35 GHz GaAs EBAlpha MMIC Driver Amplifier AA035P3-00 Features • Broad Coverage of Ka-Band ■ 18 dB Small Signal Gain ■ P1 dB = 17 dBm at 35 GHz ■ Self-Bias Design ■ Low Power Consumption, 260 mA, 6V Typical ■ 0.25 |iim Ti/Pt/Au Gates ■ Passivated Surface

pt 11400

Abstract: kaba
Contextual Info: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band

RF MESFET S parameters

Abstract: 1 transistor fm transmitter 5 watt "RF Power Amplifier" wireless mobile charging through microwaves UPP9401 GaAs MESFET amplifier Microsemi micronote 703 irfc20
Contextual Info: MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and Their Effects On Linearity of Digital Communications Systems William E. Doherty, Jr. Microsemi Corp. The RF sections of Analog FM and Digital Radios primarily differ in the required linearity. If the transmitter

HMC637

Contextual Info: HMC637 v03.0709 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637 is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a

Contextual Info: HMC637 v03.0709 Amplifiers - lineAr & power - Chip 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The hmC637 is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 14 dB • microwave radio & VsAT output ip3: +41 dBm

Contextual Info: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

MESFET Application

Contextual Info: HMC637 v03.0709 Amplifiers - Linear & Power - Chip 3 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637 is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm

MESFET Application

Contextual Info: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT

MESFET Application

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB

Contextual Info: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB

M517

Abstract: MASW6010 54LS04 MESFET
Contextual Info: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,

GaAs MESFET amplifier

Abstract: MAX4473 AN1800 APP1800 bias of GaAs MESFET MESFET Application
Contextual Info: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS Keywords: MESFETs, Gallium-Arsenide, GaAs MESFETs, current sense amps, current sensing, mesfet, metal semiconductor field effect transistors Dec 04, 2002 APPLICATION NOTE 1800 Smart IC Maintains Uniform Bias Current For GaAs MESFETs

wireless on off switch

Abstract: antenna diversity switch pin configuration of switch antenna diversity switch for WLAN diversity SPDT SWITCH 6 GHZ 1 WATT GaAs MESFET
Contextual Info: MicroNote #708 The Advantages of PIN Diode Switches Over MESFET Switches By Bill Doherty for IEEE 802.11a High Speed Wireless LAN Applications In the context of wireless mobile communications equipment, there is a need for the selection of signals from an array of two or more receive

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT