BIPOLAR TRANSISTOR 124 E Search Results

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features D escription • Usable Gain to 5.5 GHz • High Gain: The MSA-0886 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit

C945C

Contextual Info: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high

"Bipolar Transistor"

Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
Contextual Info: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron

Contextual Info: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41470 F eatures • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz

CM2400HC-34N

Contextual Info: MITSUBISHI HVIGBT MODULES CM2400HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM2400HC-34N ● IC . 2400A ● VCES . 1700V

CM600DY-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V

CM1200HC-66H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

CM1200HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HB-50H ● IC . 1200A ● VCES . 2500V

CM1200HA-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HA-34H ● IC . 1200A ● VCES . 1700V

CM800HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V

CM1200HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HA-50H ● IC . 1200A ● VCES . 2500V

Contextual Info: Supertex inc. HV825 Preliminary High Voltage EL Lamp Driver Ordering nformation Package Options Device Input Voltage 8-Lead SO MSOP-8 Die HV825 1.0 to 1.6V HV825LG HV825MG HV825X Features General Description □ Processed with HVCMOS technology □ 1.OV to 1,6V operating supply voltage

SXA-289

Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

AT41586

Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

ze 003 driver

Abstract: SXA-289-TR1 ze 003 SXA-289
Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which

AT-41400

Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

AT-41470

Abstract: NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

AT-42010

Abstract: S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz

of ic UM 66

Abstract: AT-41400 AT-41400-GP4 NF50 S21E chip die npn transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

chip die npn transistor

Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

til 31a

Abstract: IRGMC40U
Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while