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    BIPOLAR TRANSISTOR 124 E Search Results

    BIPOLAR TRANSISTOR 124 E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet
    TTA004B
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet

    BIPOLAR TRANSISTOR 124 E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


    Original     		PDF

    CM1600HB-34H

    Abstract: SWITCHING TRANSISTOR 144
    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1600HB-34H CM1600HB-34H SWITCHING TRANSISTOR 144 PDF

    CM1200HA-34H

    Abstract: circuit diagram induction heating
    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE


    Original     		CM1200HA-34H CM1200HA-34H circuit diagram induction heating PDF

    CM800HA-34H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM800HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-34H


    Original     		CM800HA-34H CM800HA-34H PDF

    AT-41500

    Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
    Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500 PDF

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


    Original     		AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 PDF

    CM1600HC-34H

    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1600HC-34H CM1600HC-34H PDF

    "induction heating" circuit

    Abstract: CM1200HC-34H transistor su 110
    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1200HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1200HC-34H "induction heating" circuit CM1200HC-34H transistor su 110 PDF

    CM2400HC-34H

    Abstract: TRANSISTOR Q 667 17800
    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM2400HC-34H PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM2400HC-34H CM2400HC-34H TRANSISTOR Q 667 17800 PDF

    CM1200HA-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-66H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1200HA-66H CM1200HA-66H PDF

    CM800HA-50H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM800HA-50H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H


    Original     		CM800HA-50H CM800HA-50H PDF

    CM1800HC-34H

    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE


    Original     		CM1800HC-34H CM1800HC-34H PDF

    igbt for HIGH POWER induction heating

    Abstract: igbt 600a output ac CM600HB-90H circuit diagram induction heating
    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM600HB-90H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM600HB-90H igbt for HIGH POWER induction heating igbt 600a output ac CM600HB-90H circuit diagram induction heating PDF

    CM600E2Y-34H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som CM600E2Y-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE


    Original     		CM600E2Y-34H CM600E2Y-34H PDF

    CM1200HB-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE


    Original     		CM1200HB-66H CM1200HB-66H PDF

    CM400DY-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som CM400DY-66H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H


    Original     		CM400DY-66H CM400DY-66H PDF

    CM400DY-50H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM400DY-50H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H


    Original     		CM400DY-50H CM400DY-50H PDF

    CM800HB-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE


    Original     		CM800HB-66H CM800HB-66H PDF

    CM400DY-50H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som CM400DY-50H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H


    Original     		CM400DY-50H CM400DY-50H PDF

    CM1200HA-50H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som CM1200HA-50H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1200HA-50H CM1200HA-50H PDF

    CM1200HB-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1200HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE


    Original     		CM1200HB-66H CM1200HB-66H PDF

    bipolar transistor 124 e

    Abstract: IGBT 1200A circuit diagram induction heating CM1200HA-50H
    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som CM1200HA-50H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM1200HA-50H bipolar transistor 124 e IGBT 1200A circuit diagram induction heating CM1200HA-50H PDF

    CM800HA-66H

    Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o n are is s it is m e: Th tric li Notice parame Som CM800HA-66H PRE HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules


    Original     		CM800HA-66H CM800HA-66H PDF

    ZO 103 MA 75 623

    Contextual Info: H E W L E T T - P A C K A R D / C M PN TS m blE D • 4 4 4 7 5A 4 0 0 0 ^ 7 6 0 t.E7 H H P A AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip H EW LETT PACKARD Chip Outline Features 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz


    OCR Scan     		AT-01600 ZO 103 MA 75 623 PDF