BJ TRANSISTOR IGBT Search Results

Contextual Info: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0-6 • 5±0.p The Electrodes are Isolated From Case. 7± 0 | 8 , 14±0.3 • 6 IGBTs are Built Into 1 Package.

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

P channel 600v 30a IGBT

Contextual Info: TOSHIBA MIG30J906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT M IG 30J906H , M IG 30J906H A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

T313-1

Contextual Info: POWEREX T - 3 1 - 3 1 ID226005 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual IGBTMOD Power Module SO Amperes/600 Volts Description Powerex IGBTMOD™ Modules are

Contextual Info: TOSHIBA MG400Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG400Q1US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : • Low Saturation Voltage tf=0.3/*s Max. @Induetive Load ; . T _ O / ? T T / T V T _ \

Contextual Info: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M r, 7 n n n 1 n <;n 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed tf —0.5//S Max. : (Max.) Low Saturation Voltage * v CE(sat) = 4*ov (Max.)

MG1200FXF1US53

Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Contextual Info: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

FMC6G15US60

Abstract: FMC7G15US60
Contextual Info: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G20US60

Abstract: FMC7G20US60
Contextual Info: IGBT FMC6G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC7G10US60

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

diode code GW 17

Abstract: FMC7G15US60
Contextual Info: IGBT FMC7G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G10US60

Abstract: FMC7G10US60
Contextual Info: IGBT FMC6G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

diode code GW 17

Contextual Info: IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

MHPM7A30A60B

Abstract: H bridge 300v 30a Dimensioning Inverter TI1250 z12g lgbt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A30A60BID DATA Hybrid Power Module I= In&grated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter, brake transistor/diode, current sense resistor and temperature sensor

05n60

Abstract: G05N60D
Contextual Info: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate

Contextual Info: SKHI 24 R . Absolute Maximum Ratings Symbol Conditions U6.43*4 U6.-3*4 d.%BLA%'9, 8.A F%AA'H +.'B&1, A)*3¥ 54A%B 9*14&' +.'B¥ M]*1/O E%BA%B A,&K G%),4B E%BA%B &+,)&1, G%),4B M3&`¥O 3&`¥ 9J*BG/*41 -),a%,4GH C.'',GB.) ,3*BB,) +.'B&1, 9,49, &G).99

BV725

Abstract: BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11
Contextual Info: Values Units 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V Preliminary Data VDD5V + 0,3 GND - 0,3 13,5 V V V 50 – 25 . + 85 kHz °C Values Units 15 + 5 % 5+5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C Symbol Term

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

Contextual Info: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States

ic tl494 cn

Abstract: 5v dc power supply with TL494 MIC4451
Contextual Info: MIC4451/4452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features MIC4451 and MIC4452 CMOS MOSFET drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

optocoupler 2705

Abstract: AN-3006 CNY 817 AN-3004 FOD3180 fod3180 applications mct 3021 FOD073L POWER MOSFET DRIVE semiconductors cross reference
Contextual Info: optocoupler selection guide Saving our world, 1mW at a time www.fairchildsemi.com introduction Fairchild semiconductor is a leader in the design and production of optocouplers. We offer a broad range of package platforms and incorporate various combinations of input and output configurations. our offerings include