BL 15 SMD 10 Search Results

smd dimension

Contextual Info: Product Data Sheet Part No. ST-025 BL Reflow Type SMD DIMENSIONS 7.5 X 7.5 X 2.5 Type Unit Color Black Rated Voltage (V) 3.6 Operating Voltage (V) 2-4 Current Consumption (mA) MAX.70 Coil Resistance (Ω) 15±3 Sound Output (Min) (dB) 87 Resonance Frequency

BL 15 SMD

Abstract: 2x smd mk 22 smd 05 SMD 222 smd transistor SMD g 28 SMD 2X K BL 16 SMD 067 25 34 SMD g 39
Contextual Info: 2.54 A High-precision female headers in SMD mounting for  0.635 mm and up to 0.85 mm Ø 2,5 2,5 C B 1 2,5 8,6 7 n x 2,54 C A Pin 1 Pin 1 art. no. D please indicate: . no. of contacts one row 4-20 E Pin 1 dim. [mm] B 5.00 9.50 A 4.30 8.90 BL 15 SMD 043.

WMV smd transistor

Abstract: smd mk
Contextual Info: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .

smd code bl

Abstract: SMD MARKING CODE 102
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0520-HF RoHS Device Io = 500 mA V R = 20 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Halogen free. Low forward voltage. 0.051(1.30) 0.043(1.10) Designed for mounting on small surface. Extremely thin / leadless package.

Contextual Info: SMD Schottky Barrier Diode CDBF0520 I o = 500 mA V R = 20 Volts RoHS Device Features 1005/SOD-323F -Low forward voltage. 0.102 2.60 0.095(2.40) -Designed for mounting on small surface. -Extremely thin / leadless package. 0.051(1.30) 0.043(1.10) -Majority carrier conduction.

CDBF0520-HF

Contextual Info: SMD Schottky Barrier Diode CDBF0520-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Low forward voltage. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package.

Contextual Info: SMD Schottky Barrier Diode CDBF0520-HF I o = 500 mA V R = 20 Volts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -Low forward voltage. -Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) -Extremely thin / leadless package.

a1038 transistor

Abstract: a1038 SMD CODE BL QW-A1038 SMD MARKING CODE 102 transistor A1038 CDBF0520 code BL SMD
Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0520 RoHS Device Io = 500 mA V R = 20 Volts 1005(2512) Features 0.102(2.60) 0.095(2.40) Low forward voltage. Designed for mounting on small surface. 0.051(1.30) 0.043(1.10) Extremely thin / leadless package.

Contextual Info: A Technical data PCB connectors B BL KG 3 . contact material C surface contact / contact sleeve inner contact spring surface Ni+4.6µm Sn BL15-17SMD., BL 20 SMD ., BL 5 - 10 . CuSn alloy CuZn-alloy Ni+0.2µm Au selective / Ni+2.4µm Sn (matt finished tin)

br 39 SMD

Abstract: smd code YL SMD BR 08 br smd code 1210BR br 38 SMD
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS PART NO. L±20% * Q / µH FREQ. Min. RDC Max. (Ω) IDC Min. Irms * (A) SRF TYP COLOR CODE SDS0804T-1R0M-S 1.0 3 / 100 0.021 3.8 5.0 110 BR, BL, RD SDS0804T-1R5M-S 1.5 5 / 100 0.022 5.2 4.5 90 BR, GN, RD SDS0804T-2R2M-S 2.2

CA05P4S14THSG

Abstract: VAR0543-W-E VAR9773A
Contextual Info: Metal Oxide Varistors SMD multilayer varistor array with Ni-barrier termination CA05P4S14THSG B72714A8140S160 Designation system CA 05 P 4 S 14 T HS G = Chip array = Dimensions of the device 05 x 08 length x width in 1/100 inch = Design (parallel internal structure)

CA05P4S14THSG

Abstract: CA05P
Contextual Info: Metal Oxide Varistors SMD multilayer varistor array with Ni-barrier termination CA05P4S14THSG B72714A8140S160 Designation system CA 05 P 4 S 14 T HS G = Chip array = Dimensions of the device 05 x 08 length x width in 1/100 inch = Design (parallel internal structure)

CA05P4S14THSG

Abstract: 18KV VARISTOR resistance array smd VAR9773A CA05P
Contextual Info: Metal Oxide Varistors SMD Multilayer Varistor Array with Ni-Barrier Termination CA05P4S14THSG B72714A8140S160 Data sheet Designation System CA 05 P 4 S 14 T HS = Chip Array = Dimensions of the device 05x08 Length x width in 1/100 inch = Design (Parallel internal structure)

4453 smd

Abstract: to247 f tab 4453
Contextual Info: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C

BL-LS1210

Abstract: BL-LS0805 BL-LS0603 618 smd BL-LS1206 BL-LS1311 smd Pj 75 BL 15 SMD 10 ultra Blue 5 mm LED BL-L512
Contextual Info: [ j BetLux LED Component SM D LED LAMP P art No AP |n m E m it C o lo r Iv m c d ) Le ns Type M in Typ. V ie w in g A n g le 2D1/2 BL-LS0603L Package Outline Drawing 1.6m m x0.8m m SMD, 0.6m m T H IC K N E S S B-L-LS0SO3LUDR U ltra Red 655 17 55 BL-L£D €03LU H R

SMD AHR

Abstract: DIN 16901 140 iso 8015 iso 2768 DIN 16901
Contextual Info: Ï 4 RELEASED FOR PUBLICATION FREI FOR VEROEFFENTLICHUNG ALL RIGHTS RESERVED. BY AMP INCORPORATED. ALLE RECHTE VORBEHALTEN HJRI I SHF THIS DRAWING 15 UNPUBLISHED. VF£XRA44L4£rBE— tJilVETOEFFENTL ÎEF F E N T L ICHTE ZEICHNUNG i£L C O P Y R IG H T 1997

Contextual Info: 2.54 A Female headers Precision contacts for □ 0.635 mm and Ø up to 0.85 mm, pin cross section B 2,54 7 2,54 3,1 C n x 2,54 Ø 0,6 D art. no. BL 5 . BL 5 025 . . no. of contacts one row 1 - 36 2,54 please indicate: inner contact spring surface ≥0,75µm Au

Contextual Info: OCXO Index and Quick Selection Guide >An OCXO comprises of a quartz crystal oscillator where the crystal is enclosed in an oven, usually running at around 80°C. The Crystal is a tight stability, low aging crystal with an upper Turnover point of 80°C, thus minimising any frequency drift due to

smd mk

Contextual Info: 2.54 A High-precision female headers soldering technique for Ø 0.5 mm 0,8 art. no. B 5 2,54 art. no. 2,5 7,4 7,4 3,3 3,9 2,5 Ø 1,8 Ø 1,37 Ø 1,8 3,3 0,8 MK 01 . art. no. MK 201 . art. no. 5 2,54 D 8,5 8,5 2,5 Ø 1,37 Ø 0,5 Ø 1,35 Ø0,86 Ø 0,86 0,8

Contextual Info: SMDCHGR0805SQ/1008SQ SERIES MINIATURE SMD CHIP INDUCTORS Applications : ．For high-frequency applications including mobile Phones, portable phones, such as PA, ANT, VCD SAW,etc. ．Mobile phones such as GSM, CDMA, PDC, etc. ．Bluetooth, W-LAN. Shape and Dimensions Dimensions are in mm :

marking code LA SMD

Abstract: om SMD CODE MARKING PT73031
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • Longitudinal balance from 10 KHz to ■ Low profile 16 pin SMD package 300 KHz: 60 dB min. ■ Meets the CCITT 1.430 waveform ■ Lead free version available see How to template when chip pairs and

DIN 16901

Abstract: SMD Code PN iec 286 iso 8015 iso 2768
Contextual Info: Ï 4 HJRI IS H F T H I S DRAWING 15 UNPUBLISHED. VF£XRA44L4£rBE—tJilVETOEFFENTL Î E F F E N T L I CHTE ZEICHNUNG i£ L COPYRIGHT RELEASED FOR P U B L I C A T IO N FREI FOR VEROEFFENTLICHUNG ALL RIGHTS RESERVED. BY AMP IN C O R PO R A TE D . ALLE RECHTE VORBEHALTEN

smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

Diode smd s6 95

Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100