BL-4C SWITCH PINS Search Results
BL-4C SWITCH PINS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TCWA1225G |
![]() |
High Power Switch / SPDT / WCSP14 |
![]() |
||
BAS316 |
![]() |
Switching Diode, 100 V, 0.25 A, USC |
![]() |
||
BAS516 |
![]() |
Switching Diode, 100 V, 0.25 A, ESC |
![]() |
||
1SS403E |
![]() |
Switching Diode, 200 V, 0.1 A, ESC |
![]() |
||
TBAS16 |
![]() |
Switching Diode, 80 V, 0.215 A, SOT23 |
![]() |
BL-4C SWITCH PINS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. |
Original |
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E50 | |
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM L EO EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDE2508AA is a 256M bits DDR2 SDRAM |
Original |
EDE2504AASE EDE2508AASE EDE2516AASE E0427E11 M01E0107 | |
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Description Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks. |
Original |
EDE2504AASE EDE2508AASE EDE2516AASE EDE2504AA EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0427E10 | |
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. |
Original |
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E60 | |
VM 256MB DDR400Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2504AASE 64M words x 4 bits EDE2508AASE (32M words × 8 bits) EDE2516AASE (16M words × 16 bits) Description Features The EDE2504AA is a 256M bits DDR2 SDRAM organized as 16,777,216 words × 4 bits × 4 banks. |
Original |
EDE2504AASE EDE2508AASE EDE2516AASE EDE2504AA EDE2508AA 64-ball EDE2516AA 84-ball M01E0107 E0427E11 VM 256MB DDR400 | |
SMD diode color code
Abstract: smd color coding c74 SMD smd code LE smd code transistor bcd to hex decimal Code on smd transistor smd diode code A switch SMD
|
Original |
||
ieee1149.1 cypress
Abstract: ba7 transistor
|
Original |
M19202EJ1V0UM00 M19202EJ1V0UM G0706 ieee1149.1 cypress ba7 transistor | |
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE 128M words x 4 bits EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description Features The EDE5104AB is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. |
Original |
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E40 | |
EDE5104ABSE-5C-E
Abstract: EDE5108ABSE EDE5116ABSE EDE5104ABSE
|
Original |
EDE5104ABSE EDE5108ABSE EDE5116ABSE EDE5104AB EDE5108AB 64-ball EDE5116AB 84-ball M01E0107 E0323E30 EDE5104ABSE-5C-E EDE5108ABSE EDE5116ABSE EDE5104ABSE | |
ba7 transistor
Abstract: M1920
|
Original |
G0706 ba7 transistor M1920 | |
SC014
Abstract: BAT 43 - 46 - 85 - 86 AAEO 27EO HT6547C SC03 SC05 SC09 PC keyboard CI Co4027
|
OCR Scan |
HT6547C 101-key 102-key HT6547C 16-character SC014 BAT 43 - 46 - 85 - 86 AAEO 27EO SC03 SC05 SC09 PC keyboard CI Co4027 | |
d 1649
Abstract: SSD1810ATR1 SSD1810AZ SSD1810 SSD1810V 95025 118212
|
Original |
SSD1810 SSD1810A SSD1810 100x66) 6800-/8080-series SSD1810/A d 1649 SSD1810ATR1 SSD1810AZ SSD1810V 95025 118212 | |
K8P1615UQB
Abstract: K8P2815 K8P1615U K8P6415U K8P3215U 555H k8p2815u samsung nor flash Samsung MCP 256-w
|
Original |
K8P1615UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P1615UQB K8P2815 K8P1615U K8P6415U K8P3215U 555H k8p2815u samsung nor flash Samsung MCP 256-w | |
8042 keyboard
Abstract: 8042 Keyboard Controller KEYPAD CONTROLLED DIGITAL LOCK new pc keybord 8042 "Keyboard Controller" 8042 keyboard ps2 command FKB7211 ps2 keybord UR5HCPLX KEYBOARD CONTROLLED DIGITAL LOCK
|
Original |
UR5HCPLX-06 8042 keyboard 8042 Keyboard Controller KEYPAD CONTROLLED DIGITAL LOCK new pc keybord 8042 "Keyboard Controller" 8042 keyboard ps2 command FKB7211 ps2 keybord UR5HCPLX KEYBOARD CONTROLLED DIGITAL LOCK | |
|
|||
K8P2915UQB
Abstract: BA1104 BA20B ba232b 555H BA1-43-BA1-46 samsung nor flash Samsung MCP ba2112 ba1111
|
Original |
K8P2915UQB 128Mb BA1-13 030000h-037FFFh BA1-12 028000h-02FFFFh BA1-11 020000h-027FFFh BA1-10 018000h-01FFFFh K8P2915UQB BA1104 BA20B ba232b 555H BA1-43-BA1-46 samsung nor flash Samsung MCP ba2112 ba1111 | |
K8P2815UQBContextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, |
Original |
K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB | |
samsung ba92
Abstract: BA137 k8p3215
|
Original |
K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215 | |
K8P3215UQB
Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
|
Original |
K8P3215UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P3215UQB K8P2815 K8p3215 K8P3215U k8p2815u K8P32 samsung nor flash Samsung MCP K8P6415 | |
K8P6415UQB
Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
|
Original |
K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 | |
K8P2815UQB
Abstract: K8P2815 BA231-BA234 K8P6415 K8P3215u
|
Original |
K8P2815UQB 128Mb 27FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB K8P2815 BA231-BA234 K8P6415 K8P3215u | |
K8Q2815UQB
Abstract: BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141
|
Original |
K8Q2815UQB 128Mb 56TSOP) 56-PIN 50TYP K8Q2815UQB BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141 | |
BA142Contextual Info: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, |
Original |
K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142 | |
K8P6415
Abstract: K8P32 K8P3215u K8P6415UQB K8P64
|
Original |
K8P6415UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P6415 K8P32 K8P3215u K8P6415UQB K8P64 | |
K8P3215U
Abstract: K8P2815uqc
|
Original |
K8P2815UQC 128Mb 60FBGA 84FBGA, 80x11= 56-PIN 50TYP K8P3215U K8P2815uqc |