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    Phoenix Contact 0441711 (ALTERNATE: CT-TERMIBLOCK 10 DA)

    Surge Arrester Protection Module, 240 VAC, CT, DIN Rail Mount | Phoenix Contact 0441711
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    RS 0441711 (ALTERNATE: CT-TERMIBLOCK 10 DA) Bulk 2 1
    • 1 $143.79
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    TE Connectivity 201692-6

    Rack & Panel Connectors CNTR FASTENER PLUG BLOCK 104P
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    TTI 201692-6 Each 96 1
    • 1 $214.2
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    TE Connectivity 1-201692-6

    Rack & Panel Connectors PLUG HOUSING BLOCK 104P
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    TTI 1-201692-6 Each 44 1
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    TE Connectivity 201692-4

    Rack & Panel Connectors PLUG 104P
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    TTI 201692-4 Each 20
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    TE Connectivity 201532-4

    Rack & Panel Connectors RCPTBLOCK 104P
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    TTI 201532-4 Tube 120
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    BLOCK10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Part No. MN63Y1210A Package Code No. SSOP016-P-0225E Publication date: June 2013 Ver. AEM 1 Contents Chapter 1 Overview . 9 1.1


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    PDF MN63Y1210A SSOP016-P-0225E

    Untitled

    Abstract: No abstract text available
    Text: 32bit TX System RISC TX19 family TMP1942FDU/XBG Rev1.0 March 29, 2007 TMP1942FD 32-Bit RISC Microprocessor TX19 Family TMP1942FDU/FDXBG 1. Features The TX19 is a family of high-performance 32-bit microprocessors that offers the speed of a 32-bit RISC solution with the added advantage of a significantly reduced code size of a 16-bit architecture.


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    PDF 32bit TMP1942FDU/XBG TMP1942FD 32-Bit TMP1942FDU/FDXBG 32-bit 16-bit R3000ATM

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand

    DIN527

    Abstract: TC58512 TC58512FT
    Text: TC58512FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte


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    PDF TC58512FT 512-MBIT TC58512 528-byte 528-byte Erase10 DIN527 TC58512FT

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended


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    PDF OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 67FBGA KFG5616Q1A-PEB6 256Mb 48TSOP1 KFG5616D1A-DEB6 KFG5616D1A-PEB6

    Samsung oneNand Mux

    Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    PDF MuxOneNAND512 KFM1216Q2M) MuxOneNAND512 KFM1216Q2M 48FBGA 512Mb Samsung oneNand Mux samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins

    tc58010ft

    Abstract: tc58010 DIN527 "4bit correction"
    Text: Preliminary TENTATIVE TC58010FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58010 is a single 3.3 V 1-G (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 64 pages × 4096 blocks. The device has a 528-byte static register


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    PDF TC58010FT TC58010 528-byte 528-byte tc58010ft DIN527 "4bit correction"

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A)

    10072h

    Abstract: structure chart of samsung company
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    PDF MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 10072h structure chart of samsung company

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


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    PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    samsung 2GB Nand flash 121 pins

    Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


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    PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash

    022AH

    Abstract: No abstract text available
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 022AH

    4GB MLC NAND

    Abstract: SAMSUNG NAND Flash MLC
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M 80x11 KFM2G16Q2M) KFN4G16Q2M) 4GB MLC NAND SAMSUNG NAND Flash MLC

    3at2

    Abstract: MN102 PANASONIC pic writer
    Text: MICROCOMPUTER MN102H MN102H60G/60K/F60G/F60K LSI User’s Manual Pub.No.22360-013E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their


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    PDF MN102H MN102H60G/60K/F60G/F60K 22360-013E 3at2 MN102 PANASONIC pic writer

    C100H

    Abstract: PIN DIAGRAM of st10f280 EE30h st10 Bootstrap BUT16
    Text: ST10F280 16-BIT MCU WITH MAC UNIT, 512K BYTE FLASH MEMORY AND 18K BYTE RAM PRODUCT PREVIEW • ON-CHIP BOOTSTRAP LOADER CLOCK GENERATION - ON-CHIP PLL. - DIRECT OR PRESCALED CLOCK INPUT. ■ UP TO 143 GENERAL PURPOSE I/O LINES - INDIVIDUALLY PROGRAMMABLE AS INPUT, OUTPUT OR SPECIAL FUNCTION.


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    PDF ST10F280 16-BIT 40MHz 40-BIT E-ST10F280 ST10F280 E-ST10F280-Q3TR C100H PIN DIAGRAM of st10f280 EE30h st10 Bootstrap BUT16

    OneNAND

    Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
    Text: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)


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    PDF KFW4G16Q2M-DEB6) KFH2G16Q2M-DEB6) KFG1G16Q2M-DEB6) KFG1G16Q2M-DEB6 63FBGA KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 OneNAND KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC

    IR P103s

    Abstract: 4005A
    Text: User's Manual 32 R32C/153 Group User's Manual: Hardware R32C/153 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics


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    PDF R32C/153 R32C/100 REJ09B0505-0110 IR P103s 4005A

    FMA 1622

    Abstract: LM3S328 LM3S601 LM3S610 LM3S611 LM3S612 LM3S613 LM3S615 LM3S628 LM3S801
    Text: P REL I MIN AR Y LM3S612 Microcontroller D A TA S H E E T DS-LM3S61 2-04 Co pyrigh t 200 7 Lumin ary Micro, In c. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    PDF LM3S612 DS-LM3S61 32-bit 16-bit FMA 1622 LM3S328 LM3S601 LM3S610 LM3S611 LM3S613 LM3S615 LM3S628 LM3S801

    LM3S328

    Abstract: LM3S601 LM3S610 LM3S611 LM3S612 LM3S613 LM3S615 LM3S628 LM3S801 SPI irreversible locking
    Text: P REL I MIN AR Y LM3S610 Microcontroller D A TA S H E E T DS-LM3S61 0-03 Co pyrigh t 200 7 Lumin ary Micro, In c. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    PDF LM3S610 DS-LM3S61 32-bit 16-bit LM3S328 LM3S601 LM3S611 LM3S612 LM3S613 LM3S615 LM3S628 LM3S801 SPI irreversible locking

    LM3S611

    Abstract: LM3S612 LM3S613 LM3S615 LM3S628 LM3S801 A-100 LM3S328 LM3S601 LM3S610
    Text: P RE L I M I NA R Y LM3S612 Microcontroller D ATA SHE E T DS -LM3S 612- 02 C opyr ight 2006 Lumi nary Micro , Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    PDF LM3S612 LM3S611 LM3S613 LM3S615 LM3S628 LM3S801 A-100 LM3S328 LM3S601 LM3S610

    LM3S817

    Abstract: 0X00 16C550 LM3S317 LM3S617 LM3S618 LM3S818 BUP 312 diode 931 p 7
    Text: P REL I MIN AR Y LM3S817 Microcontroller D A TA S H E E T DS-LM3S81 7-02 Co pyrigh t 200 7 Lumin ary Micro, In c. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    PDF LM3S817 DS-LM3S81 32-bit 16-bit 0X00 16C550 LM3S317 LM3S617 LM3S618 LM3S818 BUP 312 diode 931 p 7

    A-100

    Abstract: LM3S328 LM3S601 LM3S610 LM3S611 LM3S612 LM3S613 LM3S615 LM3S628 LM3S801
    Text: P RE L I M I NA R Y LM3S615 Microcontroller D ATA SHE E T DS -LM3S 615- 01 C opyr ight 2006 Lumi nary Micro , Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    PDF LM3S615 A-100 LM3S328 LM3S601 LM3S610 LM3S611 LM3S612 LM3S613 LM3S628 LM3S801

    FDXB

    Abstract: TX39 ba p35 AD164 kb 3310
    Text: 32 ビット TX System RISC TX19 ファミリー TMP1942FDU/XBG Rev1.4 2007 年 3 月 29 日 TMP1942FD 32 ビット RISC マイクロプロセッサ TX19 ファミリー TMP1942FDU/FDXBG 1. 概要と特長 TX19 ファミリーは米国 MIPS グループの RISC マイクロプロセッサである R3000ATM をベース


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    PDF TMP1942FDU/XBG TMP1942FD TMP1942FDU/FDXBG R3000ATM MIPS16TMASE TMP1942 TMP1942 060629TBA TMP1942FD-1 FDXB TX39 ba p35 AD164 kb 3310