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    BLY 97 TRANSISTOR Search Results

    BLY 97 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BLY 97 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic AM 12A

    Abstract: TRANSISTOR bu 406 E178
    Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4BC30UPbF O-220AB O-220AB -220AB ic AM 12A TRANSISTOR bu 406 E178

    IRFB11N50A

    Abstract: IRFI840G
    Text: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF IRFIB7N50APbF O-220 IRFI840G IRFB11N50A IRFI840G

    035H

    Abstract: MB 39A 25 diodes 39a transistor WW 179
    Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC50FDPbF O-247AC 035H MB 39A 25 diodes 39a transistor WW 179

    AN-994

    Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 O-220 O-220 IRGB4B60KD1PbF O-262 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    AN-994

    Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1

    Untitled

    Abstract: No abstract text available
    Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.


    Original     		PDF 5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


    OCR Scan     		PDF BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan     		PDF BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53

    blw 30 or bfw 30

    Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
    Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V


    OCR Scan     		PDF O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan     		PDF BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63

    BLW16

    Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
    Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V


    OCR Scan     		PDF BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


    OCR Scan     		PDF BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88

    bly 2 10

    Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor
    Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz


    OCR Scan     		PDF BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor

    ali 3602

    Abstract: AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v
    Text: ELECTRONIC MEASUREMENTS INC. Instruction Manual for EXX Series 60 Watt DC Power Supply Models: EXX EXX EXX EXX 7-6 15-4 20-3 30-2 EXX 60-1 EXX 120-0.5 EXX 250-0.25 T M -6 0 0 0 -E M INSTRUCTION MANUAL ABOUT THIS MANUAL About This Manual This manual contains user information for the EXX Series DC power supply. It provides information about


    OCR Scan     		PDF TM-6000-EM DS127-DS129 PC-6802-F ali 3602 AC digital voltmeter using 7107 104j capacitor Y4W diode y4w transistor digital voltmeter using IC 7107 b082 op s 2 umi 1A 250V ali 3602 ic MF CAPACITOR 100v

    AT-60500

    Abstract: AVANTEK transistor AVANTEK AT60500 Avantek, Inc transistor J 4081 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AVANTEK oscillator
    Text: AVANTEK SQE D INC AVAN TEK • OOGbSQ? A T60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Avantek Chip Outline1 Features • • • • 3 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.5 dB typical at 2.0 GHz


    OCR Scan     		PDF AT-60500 310-371-8717or3lO-37l-8478 AVANTEK transistor AVANTEK AT60500 Avantek, Inc transistor J 4081 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AVANTEK oscillator

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    HFET-2202

    Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
    Text: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum


    OCR Scan     		PDF HFET-2202 HFET-2202 NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112

    AVANTEK transistor

    Abstract: No abstract text available
    Text: A V A N T E K INC 20E 3> AVANTEK • UMlltt AT-60200 Up to 6 GHz Low Noise Silicon Bipolar Transistor Trans Chip T • • 3 M 5 “ Avantek Chip Outline' Features • • & Q00bS04 Low Bias Current Operation Low Noise Figure: 1.9 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz


    OCR Scan     		PDF Q00bS04 AT-60200 310-371-a717or3 10-37l-8478 AVANTEK transistor

    AVANTEK oscillator

    Abstract: Avantek S AT-21400 AVANTEK transistor equivalent io transistor 131-G
    Text: A V A N T E K INC SDE D AVANTEK llinbt 00Qb4Sfl S AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor T -3 1 Avantek Chip Outline1 Features • • • • - l “ 7 Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz


    OCR Scan     		PDF 00Qb4Sfl AT-21400 ent03 AVANTEK oscillator Avantek S AVANTEK transistor equivalent io transistor 131-G

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    motorola 7673 A

    Abstract: LA 7673 motorola 7673 b Motorola 8039
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF957T1 The RF Line NPN Silicon Low Noise, High-Frequency Transistor Iq = 100 m A LO W NO ISE H IG H -FR E Q U EN C Y TR A N SIS TO R D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is


    OCR Scan     		PDF MRF957T1 Collector-Em96 MRF957T1 motorola 7673 A LA 7673 motorola 7673 b Motorola 8039